Author: Hazara S. Rathore
Publisher: The Electrochemical Society
ISBN: 9781566770972
Category : Technology & Engineering
Languages : en
Pages : 258

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Book Description

Author: Yoshio Nishi
Publisher: CRC Press
ISBN: 1420017667
Category : Technology & Engineering
Languages : en
Pages : 1720

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Book Description
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.

Author: ASM International
Publisher: ASM International
ISBN: 1627081518
Category : Technology & Engineering
Languages : en
Pages : 666

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Book Description
The theme for the November 2017 conference was Striving for 100% Success Rate. Papers focus on the tools and techniques needed for maximizing the success rate in every aspect of the electronic device failure analysis process.

Author: Electrochemical Society. Dielectric Science and Technology Division
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 290

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Book Description

Author: Electrochemical Society. High Temperature Materials Division
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 1296

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Book Description

Author:
Publisher:
ISBN:
Category : Semiconductor wafers
Languages : en
Pages : 508

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Book Description

Author: Iqbal Ali
Publisher: The Electrochemical Society
ISBN: 9781566771726
Category : Science
Languages : en
Pages : 294

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Book Description

Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 1008

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Book Description

Author: Steven H. Voldman
Publisher: John Wiley & Sons
ISBN: 0470012900
Category : Technology & Engineering
Languages : en
Pages : 420

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Book Description
This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

Author: Mikhail Baklanov
Publisher: John Wiley & Sons
ISBN: 1119966868
Category : Technology & Engineering
Languages : en
Pages : 616

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Book Description
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.