Preparation and Investigation of Crystallographic Properties of Epitaxial Silicon-germanium Alloys Grown on Silicon Substrates by Chemical Vapor Deposition Using SiH4 and GeH4 PDF Download
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Author: Nat Hemasilpin
Publisher:
ISBN:
Category :
Languages : en
Pages : 504
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Author: Nat Hemasilpin
Publisher:
ISBN:
Category :
Languages : en
Pages : 504
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Author: Y. Shiraki
Publisher: Elsevier
ISBN: 0857091425
Category : Technology & Engineering
Languages : en
Pages : 649
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Book Description
Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Author: Gudrun Kissinger
Publisher: CRC Press
ISBN: 1466586656
Category : Science
Languages : en
Pages : 424
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Book Description
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Author:
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ISBN:
Category : Chemistry
Languages : en
Pages : 2002
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Author: James R. Dekker
Publisher:
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Category :
Languages : en
Pages : 406
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Author: Leslie I. Halberg
Publisher:
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Category :
Languages : en
Pages : 308
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Author: American Ceramic Society
Publisher:
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Category : Ceramics
Languages : en
Pages : 1150
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Category : Electrical engineering
Languages : en
Pages : 2304
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Category : Physics
Languages : en
Pages : 698
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Author: John D. Leighton
Publisher:
ISBN:
Category :
Languages : en
Pages : 246
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