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Author: B. Jayant Baliga
Publisher: Springer Science & Business Media
ISBN: 1441959173
Category : Technology & Engineering
Languages : en
Pages : 573
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Book Description
During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.
Author: B. Jayant Baliga
Publisher: Springer Science & Business Media
ISBN: 1441959173
Category : Technology & Engineering
Languages : en
Pages : 573
Get Book Here
Book Description
During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.
Author: Duncan A. Grant
Publisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 540
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Book Description
Details the theory of power MOSFETs and their applications. Explains the basis of MOSFET characteristics, and the features that determine MOSFET behavior. Examines the interaction of the MOSFET device with other elements in the circuit, and how device characteristics influence circuit design. Describes several circuits at length to highlight the practical details of power MOSFET use.
Author: B Jayant Baliga
Publisher: World Scientific
ISBN: 981448119X
Category : Technology & Engineering
Languages : en
Pages : 320
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Book Description
The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks.
Author: B. Jayant Baliga
Publisher: World Scientific
ISBN: 9812561218
Category : Technology & Engineering
Languages : en
Pages : 320
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Book Description
"The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks."--BOOK JACKET.Title Summary field provided by Blackwell North America, Inc. All Rights Reserved
Author: B. Jayant Baliga
Publisher: Springer
ISBN: 3319939882
Category : Technology & Engineering
Languages : en
Pages : 1114
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Book Description
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Author:
Publisher:
ISBN: 9780993485404
Category :
Languages : en
Pages : 315
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Book Description
Author: Richard C. Dorf
Publisher: CRC Press
ISBN: 1420049755
Category : Technology & Engineering
Languages : en
Pages : 3627
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Book Description
In two editions spanning more than a decade, The Electrical Engineering Handbook stands as the definitive reference to the multidisciplinary field of electrical engineering. Our knowledge continues to grow, and so does the Handbook. For the third edition, it has grown into a set of six books carefully focused on specialized areas or fields of study. Each one represents a concise yet definitive collection of key concepts, models, and equations in its respective domain, thoughtfully gathered for convenient access. Combined, they constitute the most comprehensive, authoritative resource available. Circuits, Signals, and Speech and Image Processing presents all of the basic information related to electric circuits and components, analysis of circuits, the use of the Laplace transform, as well as signal, speech, and image processing using filters and algorithms. It also examines emerging areas such as text to speech synthesis, real-time processing, and embedded signal processing. Electronics, Power Electronics, Optoelectronics, Microwaves, Electromagnetics, and Radar delves into the fields of electronics, integrated circuits, power electronics, optoelectronics, electromagnetics, light waves, and radar, supplying all of the basic information required for a deep understanding of each area. It also devotes a section to electrical effects and devices and explores the emerging fields of microlithography and power electronics. Sensors, Nanoscience, Biomedical Engineering, and Instruments provides thorough coverage of sensors, materials and nanoscience, instruments and measurements, and biomedical systems and devices, including all of the basic information required to thoroughly understand each area. It explores the emerging fields of sensors, nanotechnologies, and biological effects. Broadcasting and Optical Communication Technology explores communications, information theory, and devices, covering all of the basic information needed for a thorough understanding of these areas. It also examines the emerging areas of adaptive estimation and optical communication. Computers, Software Engineering, and Digital Devices examines digital and logical devices, displays, testing, software, and computers, presenting the fundamental concepts needed to ensure a thorough understanding of each field. It treats the emerging fields of programmable logic, hardware description languages, and parallel computing in detail. Systems, Controls, Embedded Systems, Energy, and Machines explores in detail the fields of energy devices, machines, and systems as well as control systems. It provides all of the fundamental concepts needed for thorough, in-depth understanding of each area and devotes special attention to the emerging area of embedded systems. Encompassing the work of the world's foremost experts in their respective specialties, The Electrical Engineering Handbook, Third Edition remains the most convenient, reliable source of information available. This edition features the latest developments, the broadest scope of coverage, and new material on nanotechnologies, fuel cells, embedded systems, and biometrics. The engineering community has relied on the Handbook for more than twelve years, and it will continue to be a platform to launch the next wave of advancements. The Handbook's latest incarnation features a protective slipcase, which helps you stay organized without overwhelming your bookshelf. It is an attractive addition to any collection, and will help keep each volume of the Handbook as fresh as your latest research.
Author: Alex Lidow
Publisher: John Wiley & Sons
ISBN: 1119594146
Category : Science
Languages : en
Pages : 389
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Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Author: Robert Perret
Publisher: John Wiley & Sons
ISBN: 1118623207
Category : Technology & Engineering
Languages : en
Pages : 381
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Book Description
This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.
Author: Mohd Fadzli Bin Abdollah
Publisher: Centre for Advanced Research on Energy
ISBN: 9670257883
Category :
Languages : en
Pages : 510
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Book Description
This e-book is a compilation of papers presented at the Mechanical Engineering Research Day 2017 (MERD'17) - Melaka, Malaysia on 30 March 2017.
