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Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 1156
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Book Description
Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 1156
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Book Description
Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1208
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Book Description
Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 970
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Book Description
Author: P. Hautojärvi
Publisher: Springer Science & Business Media
ISBN: 364281316X
Category : Science
Languages : en
Pages : 266
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Book Description
In condensed matter initially fast positrons annihilate after having reached equi librium with the surroundings. The interaction of positrons with matter is governed by the laws of ordinary quantum mechanics. Field theory and antiparticle properties enter only in the annihilation process leading to the emergence of energetic photons. The monitoring of annihilation radiation by nuclear spectroscopic methods provides valuable information on the electron-positron system which can directly be related to the electronic structure of the medium. Since the positron is a positive electron its behavior in matter is especially interesting to solid-state and atomic physi cists. The small mass quarantees that the positron is really a quantum mechanical particle and completely different from any other particles and atoms. Positron physics started about 25 years ago but discoveries of new features in its interac tion with matter have maintained continuous interest and increasing activity in the field. Nowadays it is becoming part of the "stock-in-trade" of experimental physics.
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 724
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Book Description
Author: Reinhard Krause-Rehberg
Publisher: Springer Science & Business Media
ISBN: 9783540643715
Category : Science
Languages : en
Pages : 408
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Book Description
This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Michael F. L'Annunziata
Publisher: Elsevier
ISBN: 0323137881
Category : Science
Languages : en
Pages : 810
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Book Description
Handbook of Radioactivity Analysis is written by experts in the measurement of radioactivity. The book describes the broad scope of analytical methods available and instructs the reader on how to select the proper technique. It is intended as a practical manual for research which requires the accurate measurement of radioactivity at all levels, from the low levels encountered in the environment to the high levels measured in radioisotope research. This book contains sample preparation procedures, recommendations on steps to follow, necessary calculations, computer controlled analysis, and high sample throughput techniques. Each chapter includes practical techniques for application to nuclear safety, nuclear safeguards, environmental analysis, weapons disarmament, and assays required for research in biomedicine and agriculture. The fundamentals of radioactivity properties, radionuclide decay, and methods of detection are included to provide the basis for a thorough understanding of the analytical procedures described in the book. Therefore, the Handbook can also be used as a teaching text. - Includes sample preparation techniques for matrices such as soil, air, plant, water, animal tissue, and surface swipes - Provides procedures and guidelines for the analysis of commonly encountered na
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1266
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Book Description
Author:
Publisher: Academic Press
ISBN: 0128019409
Category : Technology & Engineering
Languages : en
Pages : 458
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Book Description
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
