Author: Randall M. Feenstra
Publisher: John Wiley & Sons
ISBN: 9780470751824
Category : Technology & Engineering
Languages : en
Pages : 332
Book Description
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Porous Silicon Carbide and Gallium Nitride
Author: Randall M. Feenstra
Publisher: John Wiley & Sons
ISBN: 9780470751824
Category : Technology & Engineering
Languages : en
Pages : 332
Book Description
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Publisher: John Wiley & Sons
ISBN: 9780470751824
Category : Technology & Engineering
Languages : en
Pages : 332
Book Description
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Gallium Nitride And Silicon Carbide Power Devices
Author: B Jayant Baliga
Publisher: World Scientific Publishing Company
ISBN: 9813109424
Category : Technology & Engineering
Languages : en
Pages : 592
Book Description
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Publisher: World Scientific Publishing Company
ISBN: 9813109424
Category : Technology & Engineering
Languages : en
Pages : 592
Book Description
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Gallium Nitride and Silicon Carbide Power Technologies 7
Author: M. Dudley
Publisher: The Electrochemical Society
ISBN: 1607688247
Category :
Languages : en
Pages : 297
Book Description
Publisher: The Electrochemical Society
ISBN: 1607688247
Category :
Languages : en
Pages : 297
Book Description
Gallium Nitride and Silicon Carbide Power Technologies 3
Author: Electrochemical Society
Publisher:
ISBN: 9781623320959
Category :
Languages : en
Pages : 466
Book Description
Publisher:
ISBN: 9781623320959
Category :
Languages : en
Pages : 466
Book Description
Gallium Nitride and Silicon Carbide Power Technologies
Author: K. Shenai
Publisher: The Electrochemical Society
ISBN: 1607682621
Category :
Languages : en
Pages : 361
Book Description
Publisher: The Electrochemical Society
ISBN: 1607682621
Category :
Languages : en
Pages : 361
Book Description
Gallium Nitride and Silicon Carbide Power Technologies 4
Author: K. Shenai
Publisher: The Electrochemical Society
ISBN: 1607685442
Category :
Languages : en
Pages : 312
Book Description
Publisher: The Electrochemical Society
ISBN: 1607685442
Category :
Languages : en
Pages : 312
Book Description
Gallium Nitride and Silicon Carbide Power Technologies 8
Author: M. Dudley
Publisher: The Electrochemical Society
ISBN: 160768859X
Category : Science
Languages : en
Pages : 122
Book Description
Publisher: The Electrochemical Society
ISBN: 160768859X
Category : Science
Languages : en
Pages : 122
Book Description
Gallium Nitride and Silicon Carbide Power Devices
Author: B. Jayant Baliga
Publisher:
ISBN: 9789813109414
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN: 9789813109414
Category :
Languages : en
Pages :
Book Description
Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method (Penerbit USM)
Author: Cheah Sook Fong
Publisher: Penerbit USM
ISBN: 9674611231
Category : Science
Languages : en
Pages : 100
Book Description
Photoelectrochemical (PEC) etching is a simple and inexpensive wet etching approach that is widely used to fabricate porous gallium nitride (GaN) thin films. However, many fundamental issues on the etching mechanism and the optical response of the fabricated porous structure still remain unclear. In this book, PEC etched porous GaN thin films with a variety of morphologies such as circular, hexagonal, leaf like-, and honeycomb-like patterns were described in detail. The effects of semiconductor types, etching voltage and etching duration on the surface morphology and the optical response of the fabricated porous structure were discussed. Attenuated total reflection method which is very sensitive to the surface layer of the porous GaN was applied to extract the carrier concentration, porosity, and layer thicknesses or the porous layer. Through this book, a better understanding of the PEC etching of the porous GaN can be obtained.
Publisher: Penerbit USM
ISBN: 9674611231
Category : Science
Languages : en
Pages : 100
Book Description
Photoelectrochemical (PEC) etching is a simple and inexpensive wet etching approach that is widely used to fabricate porous gallium nitride (GaN) thin films. However, many fundamental issues on the etching mechanism and the optical response of the fabricated porous structure still remain unclear. In this book, PEC etched porous GaN thin films with a variety of morphologies such as circular, hexagonal, leaf like-, and honeycomb-like patterns were described in detail. The effects of semiconductor types, etching voltage and etching duration on the surface morphology and the optical response of the fabricated porous structure were discussed. Attenuated total reflection method which is very sensitive to the surface layer of the porous GaN was applied to extract the carrier concentration, porosity, and layer thicknesses or the porous layer. Through this book, a better understanding of the PEC etching of the porous GaN can be obtained.
Gallium Nitride and Silicon Carbide Power Technologies 6
Author: M. Dudley
Publisher:
ISBN: 9781607687290
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN: 9781607687290
Category :
Languages : en
Pages :
Book Description