Author: Mohammad Ibrahim KhanPublisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 334
Book Description
Deposition of Fluorinated Silicon Nitride Using Plasma Enhanced Chemical Vapor Deposition
Author: Mohammad Ibrahim KhanPublisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 334
Book Description
Plasma Enhanced Chemical Vapor Depostion of Fluorinated Silicon Nitride
Author: Rhett Eugene LivengoodPublisher:
ISBN:
Category :
Languages : en
Pages : 304
Book Description
Plasma-enhanced Chemical Vapor Deposition of Silicon Nitride from 1,1,3,3,5,5,-hexamethylcyclotrisilazane
Author: Todd Alan BrooksPublisher:
ISBN:
Category :
Languages : en
Pages : 286
Book Description
Plasma-enhanced Chemical Vapor Deposition of Silicon Nitride on SCS-6 SiC Fibers
Author: Daniel F. CollazosPublisher:
ISBN:
Category : Fiber-reinforced ceramics
Languages : en
Pages : 218
Book Description
Plasma Enhanced Chemical Vapor Deposition of Silicon Oxide and Silicon Nitride
Author: William H. RitchiePublisher:
ISBN:
Category : Plasma (Ionized gases)
Languages : en
Pages : 118
Book Description
Modelling and Experimental Study of Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride Films
Author: Chue-san YooPublisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 210
Book Description
Plasma and Surface Diagnostics During Plasma Enhanced Chemical Vapor Deposition of Silicon Dioxide and Fluorinated Silicon Dioxide
Author: Sang Min HanPublisher:
ISBN:
Category :
Languages : en
Pages : 289
Book Description
Plasma-enhanced Chemical Vapor Deposition of Silicon Oxynitrides
Author: Joseph Edward SchoenholtzPublisher:
ISBN:
Category :
Languages : en
Pages : 390
Book Description
Synthesis and Characterization of Silicon Nitride Film Deposited by Plasma Enhanced Chemical Vapor Deposition from Ditertiary-butyl Silane
Author: Kei-Turng ShihPublisher:
ISBN:
Category : Ditertiary-butyl silane
Languages : en
Pages : 158
Book Description
The Growth of Silicon Nitride Crystalline Films Using Microwave Plasma Enhanced Chemical Vapor Deposition
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 31
Book Description
Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 deg C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the alpha and beta phases. Scanning electron microscope imaging indicates beta-Si3N4 possesses six-fold symmetry with particles size in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In an another experiment, an organo- silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 micrometer/hr as determined by profilometry. A growth mechanism for both cases is proposed.
