Physics of High-Speed Transistors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Physics of High-Speed Transistors PDF full book. Access full book title Physics of High-Speed Transistors by Juras Pozela. Download full books in PDF and EPUB format.
Author: Juras Pozela
Publisher: Springer Science & Business Media
ISBN: 1489912428
Category : Science
Languages : en
Pages : 351
Get Book Here
Book Description
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
Author: Juras Pozela
Publisher: Springer Science & Business Media
ISBN: 1489912428
Category : Science
Languages : en
Pages : 351
Get Book Here
Book Description
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
Get Book Here
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Mark J. W. Rodwell
Publisher: World Scientific
ISBN: 9810246382
Category : Technology & Engineering
Languages : en
Pages : 372
Get Book Here
Book Description
This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology.
Author: Michael S Shur
Publisher: World Scientific
ISBN: 9814466581
Category : Technology & Engineering
Languages : en
Pages : 203
Get Book Here
Book Description
Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback.
Author: C. Y. Chang
Publisher: John Wiley & Sons
ISBN: 9780471856412
Category : Technology & Engineering
Languages : en
Pages : 632
Get Book Here
Book Description
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Author:
Publisher:
ISBN:
Category : Greek letter societies
Languages : en
Pages : 648
Get Book Here
Book Description
Author: Jung Han Choi
Publisher: CRC Press
ISBN: 1466590114
Category : Science
Languages : en
Pages : 266
Get Book Here
Book Description
Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.
Author: Pouya Valizadeh
Publisher: John Wiley & Sons
ISBN: 1119155800
Category : Technology & Engineering
Languages : en
Pages : 565
Get Book Here
Book Description
This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.
Author: Ferdinandas Vaitiekūnas
Publisher: Cambridge Scholars Publishing
ISBN: 1527592588
Category : Technology & Engineering
Languages : en
Pages : 388
Get Book Here
Book Description
This book presents the theory of large-signal nonlinear impulse processes occurring in bipolar and field-effect transistors with a Schottky gate, collapse TRAPATT and tunnel diodes, superlattices, and double heterojunction lasers. It evaluates the maximum speed of impulse operation of these elements and experimentally constructs the generation of pulse oscillations with a repetition frequency of up to 1, 2 and 4 GHz. Original or adapted methods of mathematical modeling of processes provide an opportunity to obtain quantitative dependencies of generated pulse parameters, while the book also details the synchro-photon effect. In addition, as shown here, when a semiconductor element is switched on by an electric pulse, and at the same time a pulse of photons synchronously illuminates it, an effect occurs which increases the switching speed of the element by an order of magnitude. At the same time, the switching transient characteristic is shortened by 10 times or more. After applying this effect in pulse generators in the gigahertz frequency range, an increase in the repetition frequency of the generated oscillations is possible.
Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 1420005960
Category : Technology & Engineering
Languages : en
Pages : 2322
Get Book Here
Book Description
For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.
