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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 994
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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 994
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Book Description
Author: Ram Ekwal Sah
Publisher: The Electrochemical Society
ISBN: 1566775523
Category : Dielectric films
Languages : en
Pages : 863
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Book Description
This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
Author: B.E. Deal
Publisher: Springer Science & Business Media
ISBN: 1489915885
Category : Science
Languages : en
Pages : 505
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Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Author: Parmod Kumar
Publisher: Elsevier
ISBN: 0323909086
Category : Technology & Engineering
Languages : en
Pages : 738
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Book Description
Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. - Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism - Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism - Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more
Author: Uwe Schroeder
Publisher: Woodhead Publishing
ISBN: 0081024312
Category : Technology & Engineering
Languages : en
Pages : 572
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Book Description
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Author:
Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 700
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Book Description
Author: Flora Li
Publisher: Springer Science & Business Media
ISBN: 354027412X
Category : Technology & Engineering
Languages : en
Pages : 231
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Book Description
As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.
Author: J M Marshall
Publisher: World Scientific
ISBN: 9814543705
Category :
Languages : en
Pages : 582
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Book Description
This volume constitutes the proceedings of the tenth meeting of the International school on Condensed Matter Physics. Since 1980, this community of condensed matter scientists has gathered in Varna, Bulgaria, every two years, to review and discuss the development of various investigations in the field, to present the latest results, and to outline the most important trends in condensed matter science.The book reflects the development of the field, and points to the growing interest in the application of theoretical achievements and to the mutual inspirations of science and technology.
Author: Jörg Florian Friedrich
Publisher: John Wiley & Sons
ISBN: 1119364760
Category : Science
Languages : en
Pages : 805
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Book Description
NONTHERMAL PLASMAS FOR MATERIALS PROCESSING This unique book covers the physical and chemical aspects of plasma chemistry with polymers and gives new insights into the interaction of physics and chemistry of nonthermal plasmas and their applications in materials science for physicists and chemists. The properties and characteristics of plasmas, elementary (collision) processes in the gas phase, plasma surface interactions, gas discharge plasmas and technical plasma sources, atmospheric plasmas, plasma diagnostics, polymers and plasmas, plasma polymerization, post-plasma processes, plasma, and wet-chemical processing, plasma-induced generation of functional groups, and the chemical reactions on these groups along with a few exemplary applications are discussed in this comprehensive but condensed state-of-the-art book on plasma chemistry and its dependence on plasma physics. While plasma physics, plasma chemistry, and polymer science are often handled separately, the aim of the authors is to harmoniously join the physics and chemistry of low-pressure and atmospheric-pressure plasmas with polymer surface chemistry and polymerization and to compare such chemistry with classic chemistry. Readers will find in these chapters Interaction of plasma physics and chemistry in plasmas and at the surface of polymers; Explanation and interpretation of physical and chemical mechanisms on plasma polymerization and polymer surface modification; Introduction of modern techniques in plasma diagnostics, surface analysis of solids, and special behavior of polymers on exposure to plasmas; Discussion of the conflict of energy-rich plasma species with permanent energy supply and the much lower binding energies in polymers and alternatives to avoid random polymer decomposition Technical applications such as adhesion, cleaning, wettability, textile modification, coatings, films, etc. New perspectives are explained about how to use selective and mild processes to allow post-plasma chemistry on non-degraded polymer surfaces. Audience Physicists, polymer chemists, materials scientists, industrial engineers in biomedicine, coatings, printing, etc.
Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 480
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Book Description
