Photoluminescence and Tunneling in GaAs/AlxGa1-xAs Single Quantum Wells PDF Download
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Author: Linda Jean Blue
Publisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 282
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Book Description
Author: Linda Jean Blue
Publisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 282
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Book Description
Author: Er-Xuan Ping
Publisher:
ISBN:
Category :
Languages : en
Pages : 102
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Book Description
Author: Federico Capasso
Publisher:
ISBN:
Category : Mathematics
Languages : en
Pages : 256
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Book Description
Author: Gerald B. Stringfellow
Publisher: CRC Press
ISBN: 100011225X
Category : Science
Languages : en
Pages : 680
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Book Description
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Author:
Publisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 254
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Book Description
Author: L.L. Chang
Publisher: Springer Science & Business Media
ISBN: 1461538467
Category : Science
Languages : en
Pages : 526
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Book Description
This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
Author: Chih-Wei Eddy Lai
Publisher:
ISBN:
Category :
Languages : en
Pages : 362
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Author: Kenneth Matthew Edmondson
Publisher:
ISBN:
Category :
Languages : en
Pages : 244
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Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002
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Book Description
Author: Günter Weimann
Publisher: CRC Press
ISBN: 9780750302951
Category : Technology & Engineering
Languages : en
Pages : 880
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Book Description
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
