Photoemission and Optical Studies of the Electronic Structure of NiO, CoO, and V2O4 PDF Download
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Author: Richard James Powell
Publisher:
ISBN:
Category : Electrons
Languages : en
Pages : 192
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Author: Richard James Powell
Publisher:
ISBN:
Category : Electrons
Languages : en
Pages : 192
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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages :
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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Stanford University. Stanford Electronics Laboratories
Publisher:
ISBN:
Category : Electrons
Languages : en
Pages : 328
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Book Description
Photoemission studies of the electronic energy band structures of gallium arsenide, gallium phosphide, and silicon are reported. The results of measurements of photoemissive yield and energy distributions for photoemitted electrons, as a function of the photon energy of the monochromatic light, are presented for both clean surfaces of GaAs, GaP and silicon, and those surfaces covered with a monolayer of cesium to lower the vacuum level. The structure features of the energy distribution curves for photoemitted electrons for GaAs, GaP, and Si are explained in detail in terms of direct interband transitions in the respective electronic energy band structures of the materials. The overall photoemission results for the three materials are shown to be quite similar, which reflects the basic similarity of their electronic band structures and optical spectra.
Author:
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Category : Military research
Languages : en
Pages : 746
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Author:
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ISBN:
Category : Science
Languages : en
Pages : 850
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Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 646
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Author: Lawrence William James
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 144
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Book Description
Considerable interest has been shown in developing a practical photocathode using the GaAs-Cs system. It was felt that a thorough study of the photoemission from vacuum cleaved surfaces would eliminate the variable of surface preparation, and allow a detailed examination of the photoemission process in GaAs. In the process of this examination, new instrumentation allowing high resolution measurement of emitted electron energy distributions and their derivatives was developed, and played a critical role in making sufficient information available from experiment to allow the description of the photoemission process in terms of meaningful quantitative theories. In parallel with other laboratories, a process was developed for applying additional layers of oxygen and cesium to the surface, resulting in a lower vacuum level and an increased quantum efficiency. The report covers in detail the methods and results of the experimental work conducted, and the theories which have been developed to explain the experimental results. (Author).
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 668
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Author:
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ISBN:
Category :
Languages : en
Pages : 122
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Book Description
Includes brief descriptions of projects, listings of contracts and grant support, and listings of publications.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 946
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