Photo-enhanced and Normal Growth of III-V Nitride Thin Films PDF Download
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Author: Michael J. Paisley
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
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Author: Michael J. Paisley
Publisher:
ISBN:
Category :
Languages : en
Pages : 294
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Author: Zlatko Sitar
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 850
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-SiC(001) Substrates Via Organometallic Vapor Phase Epitaxy PDF](https://books.google.com/books/content/images/frontcover/LKilNwAACAAJ?fife=w80-h100)
Author: T. Warren Weeks (Jr.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 310
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Author: Tingkai Li
Publisher: CRC Press
ISBN: 1439815232
Category : Science
Languages : en
Pages : 588
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Book Description
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Author: Kevin James Linthicum
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 366
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Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 796
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Category : Aeronautics
Languages : en
Pages : 500
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Author: Meiyong Liao
Publisher: Elsevier
ISBN: 0128172568
Category : Technology & Engineering
Languages : en
Pages : 506
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Book Description
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
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Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
