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Author: Suting Han
Publisher: Woodhead Publishing
ISBN: 0128226064
Category : Technology & Engineering
Languages : en
Pages : 352
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Book Description
Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies
Author: Suting Han
Publisher: Woodhead Publishing
ISBN: 0128226064
Category : Technology & Engineering
Languages : en
Pages : 352
Get Book
Book Description
Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies
Author: Yoshio Nishi
Publisher: Woodhead Publishing
ISBN: 0081025858
Category : Science
Languages : en
Pages : 662
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Book Description
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
Author: Ye Zhou
Publisher: Royal Society of Chemistry
ISBN: 1839165693
Category : Technology & Engineering
Languages : en
Pages : 753
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Book Description
Author: Sabina Spiga
Publisher: Woodhead Publishing
ISBN: 0081027877
Category : Technology & Engineering
Languages : en
Pages : 569
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Book Description
Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, including materials and device aspects with a view of current materials systems and their remaining barriers, algorithmic aspects comprising basic concepts of neuroscience as well as various computing concepts, the circuits and architectures implementing those algorithms based on memristive technologies, and target applications, including brain-inspired computing, computational memory, and deep learning. This comprehensive book is suitable for an interdisciplinary audience, including materials scientists, physicists, electrical engineers, and computer scientists. Provides readers an overview of four key concepts in this emerging research topic including materials and device aspects, algorithmic aspects, circuits and architectures and target applications Covers a broad range of applications, including brain-inspired computing, computational memory, deep learning and spiking neural networks Includes perspectives from a wide range of disciplines, including materials science, electrical engineering and computing, providing a unique interdisciplinary look at the field
Author: Wen Siang Lew
Publisher:
ISBN: 9789811569111
Category :
Languages : en
Pages : 0
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Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: National Academies of Sciences Engineering and Medicine
Publisher:
ISBN: 9780309683197
Category :
Languages : en
Pages :
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Book Description
Current von Neumann style computing is energy inefficient and bandwidth limited as information is physically shuttled via electrons between processor, short term non-volatile memory, and long-term storage. Biologically inspired neuromorphic computing, with its inherent autonomous learning capabilities and much lower power requirements based on analog processing, is seen as an avenue for overcoming these limitations. The development of nanoelectronic memory resistors, or memristors, is essential to neuromorphic architectures as they allow logic-based elements for information processing to be combined directly with nonvolatile memory for efficient emulation of neurons and synapses found in the brain. Memristors are typically composed of a switchable material with nonlinear hysteretic behavior sandwiched between two conducting encoding elements. The design, dynamic control, scaling and fundamental understanding of these materials is essential for establishing memristive devices. To explore the state-of-the-art in the materials fundamentally underlying memristor technologies: their science, their mechanisms and their functional imperatives to realize neuromorphic computing machines, the National Academies of Sciences, Engineering, and Medicine's Board on Physics and Astronomy convened a workshop on February 28, 2020. This publication summarizes the presentation and discussion of the workshop.
Author: Wen Siang Lew
Publisher: Springer
ISBN: 9789811569104
Category : Science
Languages : en
Pages : 438
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Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Giovanni Campardo
Publisher: Springer Science & Business Media
ISBN: 9783540201984
Category : Computers
Languages : en
Pages : 616
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Book Description
VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.
Author: Daniele Ielmini
Publisher: John Wiley & Sons
ISBN: 3527680942
Category : Technology & Engineering
Languages : en
Pages : 784
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Book Description
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Author: Andrew Adamatzky
Publisher: Springer Science & Business Media
ISBN: 3319026305
Category : Computers
Languages : en
Pages : 720
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Book Description
Using memristors one can achieve circuit functionalities that are not possible to establish with resistors, capacitors and inductors, therefore the memristor is of great pragmatic usefulness. Potential unique applications of memristors are in spintronic devices, ultra-dense information storage, neuromorphic circuits and programmable electronics. Memristor Networks focuses on the design, fabrication, modelling of and implementation of computation in spatially extended discrete media with many memristors. Top experts in computer science, mathematics, electronics, physics and computer engineering present foundations of the memristor theory and applications, demonstrate how to design neuromorphic network architectures based on memristor assembles, analyse varieties of the dynamic behaviour of memristive networks and show how to realise computing devices from memristors. All aspects of memristor networks are presented in detail, in a fully accessible style. An indispensable source of information and an inspiring reference text, Memristor Networks is an invaluable resource for future generations of computer scientists, mathematicians, physicists and engineers.
