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Author: Tommy Rosenbaum
Publisher: BoD – Books on Demand
ISBN: 3743134268
Category : Technology & Engineering
Languages : en
Pages : 266
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Book Description
Bipolar complementary metal-oxide-semiconductor (BiCMOS) processes can be considered as the most general solution for RF products, as they combine the mature manufacturing tools of CMOS with the speed and drive capabilities of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). HBTs in turn are major contenders for partially filling the terahertz gap, which describes the range in which the frequencies generated by transistors and lasers do not overlap (approximately 0.3 THz to 30 THz). To evaluate the capabilities of such future devices, a reliable prediction methodology is desirable. Using a heterogeneous set of simulation tools and approaches allows to achieve this goal successively and is beneficial for troubleshooting. Various scientific fields are combined, such as technology computer-aided design (TCAD), compact modeling and parameter extraction. To create a foundation for the simulation environment and to ensure reproducibility, the used material models of the hydrodynamic and drift-diffusion approaches are introduced in the beginning of this thesis. The physical models are mainly based on literature data of Monte Carlo (MC) or deterministic simulations of the Boltzmann transport equation (BTE). However, the TCAD deck must be calibrated on measurement data too for a reliable performance prediction of HBTs. The corresponding calibration approach is based on measurements of an advanced SiGe HBT technology for which a technology-specific parameter set of the HICUM/L2 compact model is extracted for the high-speed, medium-voltage and high-voltage transistor versions. With the help of the results, one-dimensional transistor characteristics are generated that serve as reference for the doping profile and model calibration. By performing elaborate comparisons between measurement-based reference data and simulations, the thesis advances the state-of-the-art of TCAD-based predictions and proofs the feasibility of the approach. Finally, the performance of a future technology in 28 nm is predicted by applying the heterogeneous methodology. On the basis of the TCAD results, bottlenecks of the technology are identified.
Author: Tommy Rosenbaum
Publisher: BoD – Books on Demand
ISBN: 3743134268
Category : Technology & Engineering
Languages : en
Pages : 266
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Book Description
Bipolar complementary metal-oxide-semiconductor (BiCMOS) processes can be considered as the most general solution for RF products, as they combine the mature manufacturing tools of CMOS with the speed and drive capabilities of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). HBTs in turn are major contenders for partially filling the terahertz gap, which describes the range in which the frequencies generated by transistors and lasers do not overlap (approximately 0.3 THz to 30 THz). To evaluate the capabilities of such future devices, a reliable prediction methodology is desirable. Using a heterogeneous set of simulation tools and approaches allows to achieve this goal successively and is beneficial for troubleshooting. Various scientific fields are combined, such as technology computer-aided design (TCAD), compact modeling and parameter extraction. To create a foundation for the simulation environment and to ensure reproducibility, the used material models of the hydrodynamic and drift-diffusion approaches are introduced in the beginning of this thesis. The physical models are mainly based on literature data of Monte Carlo (MC) or deterministic simulations of the Boltzmann transport equation (BTE). However, the TCAD deck must be calibrated on measurement data too for a reliable performance prediction of HBTs. The corresponding calibration approach is based on measurements of an advanced SiGe HBT technology for which a technology-specific parameter set of the HICUM/L2 compact model is extracted for the high-speed, medium-voltage and high-voltage transistor versions. With the help of the results, one-dimensional transistor characteristics are generated that serve as reference for the doping profile and model calibration. By performing elaborate comparisons between measurement-based reference data and simulations, the thesis advances the state-of-the-art of TCAD-based predictions and proofs the feasibility of the approach. Finally, the performance of a future technology in 28 nm is predicted by applying the heterogeneous methodology. On the basis of the TCAD results, bottlenecks of the technology are identified.
Author: Niccolò Rinaldi
Publisher: CRC Press
ISBN: 1000794407
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author: Chandan Kumar Sarkar
Publisher: CRC Press
ISBN: 1466512660
Category : Technology & Engineering
Languages : en
Pages : 462
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Book Description
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9789048186143
Category : Technology & Engineering
Languages : en
Pages : 527
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Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author: Matteo Meneghini
Publisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 380
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Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author: Mohammed Ismail
Publisher: Springer Science & Business Media
ISBN: 1402048246
Category : Technology & Engineering
Languages : en
Pages : 316
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Book Description
Radio Design in Nanometer Technologies is the first volume that looks at the integrated radio design problem as a "piece of a big puzzle", namely the entire chipset or single chip that builds an entire wireless system. This is the only way to successfully design radios to meet the stringent demands of today’s increasingly complex wireless systems.
Author: John H. Wohlgemuth
Publisher: John Wiley & Sons
ISBN: 1119459028
Category : Science
Languages : en
Pages : 289
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Book Description
Provides practical guidance on the latest quality assurance and accelerated stress test methods for improved long-term performance prediction of PV modules This book has been written from a historical perspective to guide readers through how the PV industry learned what the failure and degradation modes of PV modules were, how accelerated tests were developed to cause the same failures and degradations in the laboratory, and then how these tests were used as tools to guide the design and fabrication of reliable and long-life modules. Photovoltaic Module Reliability starts with a brief history of photovoltaics, discussing some of the different types of materials and devices used for commercial solar cells. It then goes on to offer chapters on: Module Failure Modes; Development of Accelerated Stress Tests; Qualification Testing; and Failure Analysis Tools. Next, it examines the use of quality management systems to manufacture PV modules. Subsequent chapters cover the PVQAT Effort; the Conformity Assessment and IECRE; and Predicting PV Module Service Life. The book finishes with a look at what the future holds for PV. A comprehensive treatment of current photovoltaic (PV) technology reliability and necessary improvement to become a significant part of the electric utility supply system Well documented with experimental and practical cases throughout, enhancing relevance to both scientific community and industry Timely contribution to the harmonization of methodological aspects of PV reliability evaluation with test procedures implemented to certify PV module quality Written by a leading international authority in PV module reliability Photovoltaic Module Reliability is an excellent book for anyone interested in PV module reliability, including those working directly on PV module and system reliability and preparing to purchase modules for deployment.
Author: Terry C. Edwards
Publisher: John Wiley & Sons
ISBN: 1118936175
Category : Technology & Engineering
Languages : en
Pages : 688
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Book Description
Building on the success of the previous three editions, Foundations for Microstrip Circuit Design offers extensive new, updated and revised material based upon the latest research. Strongly design-oriented, this fourth edition provides the reader with a fundamental understanding of this fast expanding field making it a definitive source for professional engineers and researchers and an indispensable reference for senior students in electronic engineering. Topics new to this edition: microwave substrates, multilayer transmission line structures, modern EM tools and techniques, microstrip and planar transmision line design, transmission line theory, substrates for planar transmission lines, Vias, wirebonds, 3D integrated interposer structures, computer-aided design, microstrip and power-dependent effects, circuit models, microwave network analysis, microstrip passive elements, and slotline design fundamentals.
Author: Ian A. Glover
Publisher: John Wiley & Sons
ISBN: 0470012749
Category : Technology & Engineering
Languages : en
Pages : 550
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Book Description
Microwave Devices, Circuits and Subsystems for Communications Engineering provides a detailed treatment of the common microwave elements found in modern microwave communications systems. The treatment is thorough without being unnecessarily mathematical. The emphasis is on acquiring a conceptual understanding of the techniques and technologies discussed and the practical design criteria required to apply these in real engineering situations. Key topics addressed include: Microwave diode and transistor equivalent circuits Microwave transmission line technologies and microstrip design Network methods and s-parameter measurements Smith chart and related design techniques Broadband and low-noise amplifier design Mixer theory and design Microwave filter design Oscillators, synthesisers and phase locked loops Each chapter is written by specialists in their field and the whole is edited by experience authors whose expertise spans the fields of communications systems engineering and microwave circuit design. Microwave Devices, Circuits and Subsystems for Communications Engineering is suitable for senior electrical, electronic or telecommunications engineering undergraduate students, first year postgraduate students and experienced engineers seeking a conversion or refresher text. Includes a companion website featuring: Solutions to selected problems Electronic versions of the figures Sample chapter
Author: Peter Ashburn
Publisher: John Wiley & Sons
ISBN: 0470090731
Category : Technology & Engineering
Languages : en
Pages : 286
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Book Description
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
