Parameter Extraction and Complex Nonlinear Transistor Models PDF Download
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Author: Gunter Kompa
Publisher: Artech House
ISBN: 1630817457
Category : Technology & Engineering
Languages : en
Pages : 609
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Book Description
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Author: Gunter Kompa
Publisher: Artech House
ISBN: 1630817457
Category : Technology & Engineering
Languages : en
Pages : 609
Get Book Here
Book Description
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Author: Matthias Rudolph
Publisher: Cambridge University Press
ISBN: 1139502263
Category : Technology & Engineering
Languages : en
Pages : 367
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Book Description
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Author: Peter H. Ladbrooke
Publisher: Artech House
ISBN: 1630818690
Category : Technology & Engineering
Languages : en
Pages : 480
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Book Description
Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.
Author: Qiang Ren
Publisher: John Wiley & Sons
ISBN: 1119808391
Category : Science
Languages : en
Pages : 724
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Book Description
Advances in Time-Domain Computational Electromagnetic Methods Discover state-of-the-art time domain electromagnetic modeling and simulation algorithms Advances in Time-Domain Computational Electromagnetic Methods delivers a thorough exploration of recent developments in time domain computational methods for solving complex electromagnetic problems. The book discusses the main time domain computational electromagnetics techniques, including finite-difference time domain (FDTD), finite-element time domain (FETD), discontinuous Galerkin time domain (DGTD), time domain integral equation (TDIE), and other methods in electromagnetic, multiphysics modeling and simulation, and antenna designs. The book bridges the gap between academic research and real engineering applications by comprehensively surveying the full picture of current state-of-the-art time domain electromagnetic simulation techniques. Among other topics, it offers readers discussions of automatic load balancing schemes for DG-FETD/SETD methods and convolution quadrature time domain integral equation methods for electromagnetic scattering. Advances in Time-Domain Computational Electromagnetic Methods also includes: Introductions to cylindrical, spherical, and symplectic FDTD, as well as FDTD for metasurfaces with GSTC and FDTD for nonlinear metasurfaces Explorations of FETD for dispersive and nonlinear media and SETD-DDM for periodic/ quasi-periodic arrays Discussions of TDIE, including explicit marching-on-in-time solvers for second-kind time domain integral equations, TD-SIE DDM, and convolution quadrature time domain integral equation methods for electromagnetic scattering Treatments of deep learning, including time domain electromagnetic forward and inverse modeling using a differentiable programming platform Ideal for undergraduate and graduate students studying the design and development of various kinds of communication systems, as well as professionals working in these fields, Advances in Time-Domain Computational Electromagnetic Methods is also an invaluable resource for those taking advanced graduate courses in computational electromagnetic methods and simulation techniques.
Author: Edmar Camargo
Publisher: Artech House
ISBN: 163081945X
Category : Technology & Engineering
Languages : en
Pages : 339
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Book Description
This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.
Author: Mouqun Dong
Publisher: Artech House
ISBN: 1630816337
Category : Technology & Engineering
Languages : en
Pages : 379
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Book Description
This comprehensive resource explains the theory of RF circuits and systems and the practice of designing them. The fundamentals for linear and low noise amplifier designs, including the S and noise parameters and their applications in amplifier designs and matching network designs using the Smith chart are covered. Theories of RF power amplifiers and high efficiency power amplifiers are also explained. The underpinnings of wireless communications systems as well as passive components commonly used in RF circuits and measurements are discussed. RF measurement techniques and RF switches are also presented. The book explores stability criteria and the invariant property of lossless networks and includes detailed theoretical treatments. The basic concepts and techniques covered in this book are routinely used in today's engineering practice, especially from the perspective of printed circuit board (PCB) based RF circuit design and system integration. Intended for practicing engineers and circuit designers, this book focuses on practical topics in circuit design and measurement techniques. It bridges the gap between academic materials and real circuit designs using real circuit examples and practical tips. Readers develop a numerical feel for RF problems as well as awareness of the concepts of design for cost and design for manufacturing, which is a critical skill set for today's engineers working in an environment of commercial product development.
Author: John L. B. Walker
Publisher: Cambridge University Press
ISBN: 0521760100
Category : Technology & Engineering
Languages : en
Pages : 705
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Book Description
This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Author: José Carlos Pedro
Publisher: Cambridge University Press
ISBN: 1107140595
Category : Technology & Engineering
Languages : en
Pages : 361
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Book Description
A practical, tutorial guide to the nonlinear methods and techniques needed to design real-world microwave circuits.
Author: José Carlos Pedro
Publisher: Cambridge University Press
ISBN: 1108570348
Category : Technology & Engineering
Languages : en
Pages : 361
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Book Description
Discover the nonlinear methods and tools needed to design real-world microwave circuits with this tutorial guide. Balancing theoretical background with practical tools and applications, it covers everything from the basic properties of nonlinear systems such as gain compression, intermodulation and harmonic distortion, to nonlinear circuit analysis and simulation algorithms, and state-of-the-art equivalent circuit and behavioral modeling techniques. Model formulations discussed in detail include time-domain transistor compact models and frequency-domain linear and nonlinear scattering models. Learn how to apply these tools to designing real circuits with the help of a power amplifier design example, which covers all stages from active device model extraction and the selection of bias and terminations, through to performance verification. Realistic examples, illustrative insights and clearly conveyed mathematical formalism make this an essential learning aid for both professionals working in microwave and RF engineering and graduate students looking for a hands-on guide to microwave circuit design.
Author: A. J. Moses
Publisher: IOS Press
ISBN: 9789051992519
Category : Computers
Languages : en
Pages : 986
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Book Description
The book covers classical and practical approaches to electromagnetic field solutions in magnetic devices. The following topics are addressed: Advanced computional techniques; Intelligent computer aided design; Magnetic materials; Inverse problems; Magnetic sensors and transducers; Performance and optimisation of devices; Applications to electronic systems; Modelling of non-linear systems and other related topics. This volume presents 200 of the best articles presented at the International Symposium on Non-Linear Electromagnetic Systems (ISEM in Cardiff, Wales). The previous ISEM papers were published in the successful volume Advanced Computational and Design Techniques in Applied Electromagnetic Systems (by Elsevier).Main chapters in this book are: Electromagnetic Devices: Non-linearities at contacts and interfaces in semiconductor structures by R.H. Williams as key-note. Optimisation, Inverse and Biological Studies: Power loss testing; intelligent computation of optimization of metal cutting; grid methods for CFD and CEM. Magnetic Materials: Materials for circuit semilator applications; rotational magnetostriction. Computational Techniques and Modelling: Electromagnetic device design; soft magnetic materials; engineering application of artificial intelligence. Sensors and Non-destructive Testing: Eddy current nondestructive evaluation; nonlinear magnetoresistance; micro magnetic sensor. Electronic and Electrical Applications: Non-linear transistor parameters; superconducting magnets.
