Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys PDF Download
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Author: Jean Wei
Publisher:
ISBN: 9781288229895
Category : Gallium arsenide
Languages : en
Pages : 164
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Book Description
A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary semiconductors were determined at various wavelengths and temperatures. Photoluminescence and Hall-effect measurement were performed to identify various electronic transitions, as well as sample quality. The determination of electrical and optical properties of the material will provide important addition to the database of material properties for future optoelectronic device applications. In the near future, newer materials and their applications need to be developed, and often binary and ternary III-V compounds (GaSb, GaP, GaSbP etc.) can be studied using the method developed in this work.
Author: Jean Wei
Publisher:
ISBN: 9781288229895
Category : Gallium arsenide
Languages : en
Pages : 164
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Book Description
A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary semiconductors were determined at various wavelengths and temperatures. Photoluminescence and Hall-effect measurement were performed to identify various electronic transitions, as well as sample quality. The determination of electrical and optical properties of the material will provide important addition to the database of material properties for future optoelectronic device applications. In the near future, newer materials and their applications need to be developed, and often binary and ternary III-V compounds (GaSb, GaP, GaSbP etc.) can be studied using the method developed in this work.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1370
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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Albert Leroy Kellner
Publisher:
ISBN:
Category :
Languages : en
Pages : 336
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Book Description
Author: S. M. Townsend
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Jamie Leigh Ramsey
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
The dilute Nitride materials, InGaAsN, are studied as promising candidates for optical devices in the telecommunications wavelength range between 1.3 and 1.55mum. Such materials can be grown lattice matched to a GaAs substrate and could remove the need to work with structures based on the InGaAsP/InP materials, which are expensive and have poor temperature performance. There are three main growth techniques for InGaAsN materials, chemical beam epitaxy (CBE), molecular beam epitaxy (MBE), and metal organic chemical vapour deposition (MOCVD). Of these three, MBE and MOCVD are used to grow the structures discussed in this thesis. X-ray diffraction and photoluminescence measurements are used for characterization. X-ray diffraction measurements provide the nitrogen concentration in the material, while photoluminescence measurements give the bandgap energy. The combination of these two results are then compared to the results from a band anti-crossing model that predicts the bandgap energy as a function of Nitrogen concentration. In addition, absorption and photoluminescence excitation measurements are used to investigate the Stokes shift in GaAsN material likely to have large composition non-uniformities. To illustrate the progress made with InGaAsN material growth, processing and characterisation, a broad area laser structure is demonstrated that emits around 1.3mum.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 888
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Book Description
Author: P. Bhattacharya
Publisher: Inst of Engineering & Technology
ISBN: 9780863416620
Category : Science
Languages : en
Pages : 340
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Book Description
"...provides an authoritative and convenient collection of pertinent data." - Optical and Quantum Electronics
Author: Bell Telephone Laboratories. Libraries and Information Systems Center
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 606
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Book Description
Author: Jin Koo Rhee
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
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Book Description
Author: Bell Telephone Laboratories, inc. Technical Information Libraries
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 576
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