Author: Reli Rosman
Publisher:
ISBN:
Category :
Languages : en
Pages : 148
Book Description
On the Theory of Heavily Doped Semiconductors
Author: Reli Rosman
Publisher:
ISBN:
Category :
Languages : en
Pages : 148
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 148
Book Description
Heavily Doped Semiconductors
Author: V. I. Fistul
Publisher: Springer Science & Business Media
ISBN: 146848821X
Category : Science
Languages : en
Pages : 428
Book Description
Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
Publisher: Springer Science & Business Media
ISBN: 146848821X
Category : Science
Languages : en
Pages : 428
Book Description
Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
The Electronic Theory of Heavily Doped Semiconductors
Author: Viktor Leopolʹdovich Bonch-Bruevich
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 154
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 154
Book Description
Electronic Properties of Doped Semiconductors
Author: B.I. Shklovskii
Publisher: Springer Science & Business Media
ISBN: 3662024039
Category : Science
Languages : en
Pages : 400
Book Description
First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.
Publisher: Springer Science & Business Media
ISBN: 3662024039
Category : Science
Languages : en
Pages : 400
Book Description
First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.
The electronic theory of heavily doped semiconductors, by V.L. Bonch-Bruyevich, tr
Author: Viktor Leopolʹdovich Bonch-Bruevich
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages :
Book Description
Theory of Electron Transport in Heavily-doped Semiconductors
Author: Takeshi Kaneto
Publisher:
ISBN:
Category :
Languages : en
Pages : 194
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 194
Book Description
The Electron Theory of Heavily Doped Semiconductors ; Trans. by R.S. Knox
Author: V. L. Bonch-Bruyevich
Publisher:
ISBN:
Category :
Languages : en
Pages : 131
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 131
Book Description
Localisation and Interaction
Author: D.M. Finlayson
Publisher: CRC Press
ISBN: 9780905945149
Category : Science
Languages : en
Pages : 438
Book Description
Localisation and Interaction covers the scaling theory of localization metal-insulator transitions, two-dimensional systems, interaction effects in impure metals, weak localization, critical point measurement, quantum wells, integer quantum Hall effects, magnetic field induced transitions, static and dynamic magnetic probes, band gap narrowing, and an experiment with the quantum Hall effects.
Publisher: CRC Press
ISBN: 9780905945149
Category : Science
Languages : en
Pages : 438
Book Description
Localisation and Interaction covers the scaling theory of localization metal-insulator transitions, two-dimensional systems, interaction effects in impure metals, weak localization, critical point measurement, quantum wells, integer quantum Hall effects, magnetic field induced transitions, static and dynamic magnetic probes, band gap narrowing, and an experiment with the quantum Hall effects.
Heavily Doped Semiconductors
Author: Viktor I. Fistul'
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
The Impurity in Heavily Doped Semiconductors
Author: William D. Fountain
Publisher:
ISBN:
Category :
Languages : en
Pages : 76
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 76
Book Description