Ohmic Contacts to Semiconductors PDF Download
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Author: Electrochemical Society
Publisher:
ISBN:
Category : Electric contactors
Languages : en
Pages : 372
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Book Description
Author: Electrochemical Society
Publisher:
ISBN:
Category : Electric contactors
Languages : en
Pages : 372
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Book Description
Author: L. J. Brillson
Publisher: William Andrew
ISBN:
Category : Science
Languages : en
Pages : 712
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Book Description
. It is directed to microelectronics and optoelectronics industry researchers, designers, prototype builders, and process engineers. Researchers in physics, applied physics, electrical engineering and the materials science will also find this book an essential reference.
Author: Simon S. Cohen
Publisher: Academic Press
ISBN: 1483217795
Category : Technology & Engineering
Languages : en
Pages : 435
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Book Description
VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Author: Bertram Schwartz
Publisher:
ISBN:
Category :
Languages : en
Pages : 356
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Book Description
Author: H. B. Harrison
Publisher:
ISBN: 9780909099473
Category : Ohmic contacts
Languages : en
Pages : 42
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Book Description
Author: Thomas Dittrich
Publisher: World Scientific Publishing Company
ISBN: 1786344505
Category : Technology & Engineering
Languages : en
Pages : 568
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Book Description
A modern challenge is for solar cell materials to enable the highest solar energy conversion efficiencies, at costs as low as possible, and at an energy balance as sustainable as necessary in the future. This textbook explains the principles, concepts and materials used in solar cells. It combines basic knowledge about solar cells and the demanded criteria for the materials with a comprehensive introduction into each of the four classes of materials for solar cells, i.e. solar cells based on crystalline silicon, epitaxial layer systems of III-V semiconductors, thin-film absorbers on foreign substrates, and nano-composite absorbers. In this sense, it bridges a gap between basic literature on the physics of solar cells and books specialized on certain types of solar cells. The last five years had several breakthroughs in photovoltaics and in the research on solar cells and solar cell materials. We consider them in this second edition. For example, the high potential of crystalline silicon with charge-selective hetero-junctions and alkaline treatments of thin-film absorbers, based on chalcopyrite, enabled new records. Research activities were boosted by the class of hybrid organic-inorganic metal halide perovskites, a promising newcomer in the field. This is essential reading for students interested in solar cells and materials for solar cells. It encourages students to solve tasks at the end of each chapter. It has been well applied for postgraduate students with background in materials science, engineering, chemistry or physics.
Author: Bertram Schwartz
Publisher:
ISBN:
Category :
Languages : en
Pages : 366
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Book Description
Author: E. H. Rhoderick
Publisher: Oxford University Press, USA
ISBN:
Category : Language Arts & Disciplines
Languages : en
Pages : 280
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Book Description
This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.
Author: Ben Roger Gossick
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 186
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Book Description
Author: Konstantinos Zekentes
Publisher: Materials Research Forum LLC
ISBN: 1945291842
Category : Technology & Engineering
Languages : en
Pages : 250
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Book Description
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
