Novel Transparent Conductors Based on Molybdenum Oxide and Gallium Doped ZnO. PDF Download
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Languages : en
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Languages : en
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Author: Vikram Bhosle
Publisher:
ISBN:
Category :
Languages : en
Pages : 226
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Keywords: Transparent conducting oxide, Ga doped ZnO, molybdenum oxide, solar cells, structure - property correlations.
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Languages : en
Pages : 16
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Author: David S. Ginley
Publisher: Springer Science & Business Media
ISBN: 1441916385
Category : Technology & Engineering
Languages : en
Pages : 537
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Transparent conducting materials are key elements in a wide variety of current technologies including flat panel displays, photovoltaics, organic, low-e windows and electrochromics. The needs for new and improved materials is pressing, because the existing materials do not have the performance levels to meet the ever- increasing demand, and because some of the current materials used may not be viable in the future. In addition, the field of transparent conductors has gone through dramatic changes in the last 5-7 years with new materials being identified, new applications and new people in the field. “Handbook of Transparent Conductors” presents transparent conductors in a historical perspective, provides current applications as well as insights into the future of the devices. It is a comprehensive reference, and represents the most current resource on the subject.
Author: Altynbek Murat
Publisher:
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Category : Electric conductivity
Languages : en
Pages : 0
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"Ab-initio density functional approach is employed to investigate the structural, optical, and electronic properties of twelve undoped (non)stoichiometric multicomponent oxides with layered structure RAMO4 [R3 =In or Sc, A3 =Al or Ga, and M2 - Ca, Cd, Mg, or Zn], as candidates for novel transparent conducting oxides. The compositional complexity of RAMO4 leads to a wide range of band gaps varying from 2.45eV for InGaCdO4 to 6.29 eV for ScAlMgO4. We find that despite the different band gaps in the constituent binary oxides, namely, 2-4 eV in CdO, In2O3, or AnO; 5-6 eV for Ga2O3 or Sc2O3; and 7-9 eV in CaO, MgO, or Al2O3, the states of all cations contribute to the bottom of the conduction band of RAMO4. We show that this hybrid nature of the conduction band originates from the unusual fivefold atomic coordination of A3+ and M2+ cations and suggests that both structurally and chemically distinct layers of RAMO4 are expected to participate in carrier transport. This is consistent with the obtained isotropic electron effective mass of 0.3-0.5 m[subscript e]. Next, in order to understand the carrier generation mechanism in RAMO4, we have systematically investigated the formation of native point defects in three representative InAMO4 oxides. We find that the donor antisite defect in InGaZnO4 and InAlZnO4 occur in higher concentrations than oxygen vacancies which are major donors in binary oxides. Also in contrast to the binary TCOs, the formation energy of cation vacancies is significantly lower in InAMO4 owing to a large structural relaxation around the defect. As a result, the equilibrium Fermi level is pushed away from the conduction band and deeper into the band gap. The results agree well with the observed dependence of the conductivity on the oxygen partial pressure in InGaZnO4. These systematic investigations provide a significant insight into the role of chemical composition and structural complexity of RAMO4 materials on the carrier generation mechanisms and the resulting properties"--Abstract, leaf iv
Author: Asim K. Ray
Publisher: John Wiley & Sons
ISBN: 1119529484
Category : Technology & Engineering
Languages : en
Pages : 624
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Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.
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Category :
Languages : en
Pages :
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Author: Antonio Facchetti
Publisher: John Wiley & Sons
ISBN: 9780470710593
Category : Technology & Engineering
Languages : en
Pages : 470
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Book Description
The challenge for producing “invisible” electronic circuitry and opto-electronic devices is that the transistor materials must be transparent to visible light yet have good carrier mobilities. This requires a special class of materials having “contra-indicated properties” because from the band structure point of view, the combination of transparency and conductivity is contradictory. Structured to strike a balance between introductory and advanced topics, this monograph juxtaposes fundamental science and technology / application issues, and essential materials characteristics versus device architecture and practical applications. The first section is devoted to fundamental materials compositions and their properties, including transparent conducting oxides, transparent oxide semiconductors, p-type wide-band-gap semiconductors, and single-wall carbon nanotubes. The second section deals with transparent electronic devices including thin-film transistors, photovoltaic cells, integrated electronic circuits, displays, sensors, solar cells, and electro-optic devices. Describing scientific fundamentals and recent breakthroughs such as the first “invisible” transistor, Transparent Electronics: From Synthesis to Applications brings together world renowned experts from both academia, national laboratories, and industry.
Author:
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ISBN:
Category : Chemistry
Languages : en
Pages : 2730
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Category : Ceramics
Languages : en
Pages : 250
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