Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors PDF full book. Access full book title Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors by Eduardo Martin Chumbes. Download full books in PDF and EPUB format.
Author: Eduardo Martin Chumbes
Publisher:
ISBN:
Category :
Languages : en
Pages : 790
Get Book Here
Book Description
Author: Eduardo Martin Chumbes
Publisher:
ISBN:
Category :
Languages : en
Pages : 790
Get Book Here
Book Description
Author: Congyong Zhu
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 121
Get Book Here
Book Description
AlGaN/GaN and InAlN/GaN-based heterojunction field effect transistors (HFETs) have demonstrated great high power and high frequency performance. Although AlGaN/GaN HFETs are commercially available, there still remain issues regarding long-term reliability, particularly degradation and ultimately device failure due to the gate-drain region where the electric field peaks. One of the proposed degradation mechanisms is the inverse-piezoelectric effect that results from the vertical electric field and increases the tensile strain. Other proposed mechanisms include hot-electron-induced trap generation, impurity diffusion, surface oxidation, and hot-electron/phonon effects. To investigate the degradation mechanism and its impact on DC, microwave, and noise performance, comprehensive stress experiments were conducted in both un-passivated and passivated AlGaN/GaN HFETs. It was found that degradation of AlGaN/GaN HFETs under reverse-gate-bias stress is dominated by inverse-piezoelectric effect and/or hot-electron injection due to gate leakage. Degradation under on-state-high-field stress is dominated by hot-electron/phonon effects, especially at high drain bias. Both effects are induced by the high electric field present during stress, where the inverse-piezoelectric effect only relates to the vertical electric field and the hot-electron effect relates to the total electric field. InAlN/GaN-based HFETs are expected to have even better performance as power amplifiers due to the large 2DEG density at the InAlN/GaN interface and better lattice-matching. Electrical stress experiments were therefore conducted on InAlN/GaN HFETs with indium compositions ranging from 15.7% to 20.0%. Devices with indium composition of 18.5% were found to give the best compromise between reliability and device performance. For indium compositions of 15.7% and 17.5%, the HFET devices degraded very fast (25 h) under on-state-high-field stress, while the HFET devices with 20.0% indium composition showed very small drain. It was also demonstrated that hot-electron/phonon effects are the major degradation mechanism for InAlN/GaN HFETs due to a large 2DEG density under on-state operations, whereas the inverse-piezoelectric effect is very small due to the small strain for the near lattice-matched InAlN barrier. Compared to lattice-matched InAlN/GaN HFETs, AlGaN/GaN HFETs have much larger strain in the barrier and about half of the drain current level; however, the hot electron/hot phonon effects are still important, especially at high drain bias.
Author: Raymond S. Pengelly
Publisher: IET
ISBN: 1884932509
Category : Technology & Engineering
Languages : en
Pages : 705
Get Book Here
Book Description
The following topics are dealt with: GaAs FET theory-small signal; GaAs FET theory-power; requirements and fabrication of GaAs FETs; design of transistor amplifiers; FET mixers; GaAs FET oscillators; FET and IC packaging; FET circuits; gallium arsenide integrated circuits; and other III-V materials and devices
Author: Woojin Choi
Publisher:
ISBN:
Category :
Languages : en
Pages : 121
Get Book Here
Book Description
Transistors are the backbone of any electronic system. The Si complementary metal-oxide-semiconductor (CMOS) technology with extremely scaled process has governed the electronic world in the last few decades, but many other materials with novel design architectures are emerging to alternate it in some applications. Gallium nitride (GaN) is one of them and coming into view recently for high power and high frequency applications due to the surge of electric power usage and data transmission rate. This dissertation provides a comprehensive study of two types of GaN transistors, lateral and vertical, for power electronics and wireless communications. The first half of the dissertation investigates vertical GaN transistors for high power switches. The epitaxial layers grown by a novel selective area growth (SAG) method on a Si substrate were utilized to pursue demonstration of cheap and high-performance GaN devices, and commercialized GaN wafers were used to identify and resolve existing problems, and to improve the key device metrics. An evolution of the vertical GaN transistor by optimizing the device design and the fabrication process is shown and discussed in detail with experiments and TCAD simulations. In the second half of this dissertation, we propose a novel approach to address the intrinsic linearity of GaN transistors for radio frequency (RF) amplifiers. A new device design methodology was presented by simple lithographic modifications that can create a flat transconductance (gm) profile for AlGaN/GaN Fin field-effect transistors (FinFETs). Then, it is discussed how this flat gm impacts on the intermodulation distortion characteristics at microwave as well as millimeter wave frequencies with a record linearity figure-of-merit at 5 GHz. Finally, with a measured noise performance of the realized device, we present a record dynamic range figure-of-merit at 30 GHz for GaN transistors and much higher linearity performance than any existing semiconductor technologies, exhibiting a great potential for mm-wave low noise amplifiers (LNAs).
Author: Alex Lidow
Publisher: John Wiley & Sons
ISBN: 1118844769
Category : Science
Languages : en
Pages : 266
Get Book Here
Book Description
Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
Author: Yunju Sun
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
A brief overview of materials. Processing, technologies, and performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) are presented. Sate-of-the-art results on the dc, microwave, power, and noise characteristics of these devices on sapphire and SiC substrates are discussed. It is evident that AlGaN/GaN HFETs will be used for high power applications at microwave frequencies in the future. It is also possible that these devices will find applications for low noise amplifiers.
Author: M. Dudley
Publisher: The Electrochemical Society
ISBN: 1607688247
Category :
Languages : en
Pages : 297
Get Book Here
Book Description
Author: Rüdiger Quay
Publisher: Springer Science & Business Media
ISBN: 3540718923
Category : Technology & Engineering
Languages : en
Pages : 492
Get Book Here
Book Description
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Author: Michael Shur
Publisher: World Scientific
ISBN: 9789812562364
Category : Technology & Engineering
Languages : en
Pages : 310
Get Book Here
Book Description
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
