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Author: Fan Ren
Publisher: World Scientific
ISBN: 9812382461
Category : Technology & Engineering
Languages : en
Pages : 526
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Book Description
Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.
Author: Fan Ren
Publisher: World Scientific
ISBN: 9812382461
Category : Technology & Engineering
Languages : en
Pages : 526
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Book Description
Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.
Author: Fan Ren
Publisher:
ISBN: 9780750325165
Category : Gallium arsenide semiconductors
Languages : en
Pages : 0
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Book Description
"Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas." -- Prové de l'editor.
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
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Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: S. J. Pearton
Publisher: World Scientific
ISBN: 9789810218843
Category : Technology & Engineering
Languages : en
Pages : 568
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Book Description
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author: Kiyoshi Takahashi
Publisher: Springer Science & Business Media
ISBN: 3540472355
Category : Technology & Engineering
Languages : en
Pages : 481
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Book Description
This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.
Author: B. Jayant Baliga
Publisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 420
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Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Author: R. Szweda
Publisher: Elsevier
ISBN: 0080532306
Category : Business & Economics
Languages : en
Pages : 459
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Book Description
The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Author: Gyu-Chul Yi
Publisher: Springer Science & Business Media
ISBN: 3642224806
Category : Technology & Engineering
Languages : en
Pages : 347
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Book Description
This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.
Author: Ahmed Sharif
Publisher: John Wiley & Sons
ISBN: 3527344195
Category : Technology & Engineering
Languages : en
Pages : 398
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Book Description
Provides in-depth knowledge on novel materials that make electronics work under high-temperature and high-pressure conditions This book reviews the state of the art in research and development of lead-free interconnect materials for electronic packaging technology. It identifies the technical barriers to the development and manufacture of high-temperature interconnect materials to investigate into the complexities introduced by harsh conditions. It teaches the techniques adopted and the possible alternatives of interconnect materials to cope with the impacts of extreme temperatures for implementing at industrial scale. The book also examines the application of nanomaterials, current trends within the topic area, and the potential environmental impacts of material usage. Written by world-renowned experts from academia and industry, Harsh Environment Electronics: Interconnect Materials and Performance Assessment covers interconnect materials based on silver, gold, and zinc alloys as well as advanced approaches utilizing polymers and nanomaterials in the first section. The second part is devoted to the performance assessment of the different interconnect materials and their respective environmental impact. -Takes a scientific approach to analyzing and addressing the issues related to interconnect materials involved in high temperature electronics -Reviews all relevant materials used in interconnect technology as well as alternative approaches otherwise neglected in other literature -Highlights emergent research and theoretical concepts in the implementation of different materials in soldering and die-attach applications -Covers wide-bandgap semiconductor device technologies for high temperature and harsh environment applications, transient liquid phase bonding, glass frit based die attach solution for harsh environment, and more -A pivotal reference for professionals, engineers, students, and researchers Harsh Environment Electronics: Interconnect Materials and Performance Assessment is aimed at materials scientists, electrical engineers, and semiconductor physicists, and treats this specialized topic with breadth and depth.
