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Author: Seung-Hwan Kim
Publisher:
ISBN: 9781109873559
Category :
Languages : en
Pages : 167
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Book Description
This dissertation addresses performance projections, design optimization, and physical modeling issues of nonclassical nanoscale CMOS devices with UTBs, assessing their potential to become the basis of the near-future mainstream semiconductor technology.
Author: Seung-Hwan Kim
Publisher:
ISBN: 9781109873559
Category :
Languages : en
Pages : 167
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Book Description
This dissertation addresses performance projections, design optimization, and physical modeling issues of nonclassical nanoscale CMOS devices with UTBs, assessing their potential to become the basis of the near-future mainstream semiconductor technology.
Author: Sandip Kundu
Publisher: McGraw Hill Professional
ISBN: 0071635203
Category : Technology & Engineering
Languages : en
Pages : 316
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Book Description
Cutting-Edge CMOS VLSI Design for Manufacturability Techniques This detailed guide offers proven methods for optimizing circuit designs to increase the yield, reliability, and manufacturability of products and mitigate defects and failure. Covering the latest devices, technologies, and processes, Nanoscale CMOS VLSI Circuits: Design for Manufacturability focuses on delivering higher performance and lower power consumption. Costs, constraints, and computational efficiencies are also discussed in the practical resource. Nanoscale CMOS VLSI Circuits covers: Current trends in CMOS VLSI design Semiconductor manufacturing technologies Photolithography Process and device variability: analyses and modeling Manufacturing-Aware Physical Design Closure Metrology, manufacturing defects, and defect extraction Defect impact modeling and yield improvement techniques Physical design and reliability DFM tools and methodologies
Author: Soumya Pandit
Publisher: CRC Press
ISBN: 1351831992
Category : Technology & Engineering
Languages : en
Pages : 410
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Book Description
Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.
Author: Weimin Zhang
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
A FinFET-based hybrid device, namely the inverted-T (IT) FET, is proposed for improving current drive per pitch by fabricating a single-gate fully-depleted (FD) SOI MOSFET in the unused portion of the pitch area. Physical insights regarding the design and performance of the ITFET are gained with the UFDG model in Spice3, combined with simulations done with the 3-D numerical simulator Davinci, with design goals to achieve good current-voltage characteristics, i.e., high Ion/pitch and high Ion/Ioff with acceptable V sub t. Its advantages in effecting a good design of a nanoscale SRAM cell and of a novel two-transistor floating-body memory cell (2TFBC) are proposed and analyzed.
Author: Jerry G. Fossum
Publisher: Cambridge University Press
ISBN: 1107434491
Category : Technology & Engineering
Languages : en
Pages : 227
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Book Description
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.
Author: Vishal P. Trivedi
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages :
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Book Description
Thus, the impact of undoped body on the electrostatics of the generic DG MOSFET is examined. Carrier distribution in the body and in the quantized energy states is found to have profound effects in both weak and strong inversion. Quantum-mechanical (QM) effects, dependent on t sub Si, transverse electric field (epsilon sub x), and crystal orientation, are also physically modeled. With an undoped UTB, the need for gate-source/drain (G-S/D) underlap is emphasized as the gate length (L sub gate) approaches 7nm. L sub eff is related to L sub gate for designs with G-S/D underlap. Using numerical device simulations, physical insights on the bias dependence and the S/D lateral doping profile dependence of L sub eff are gained, relating the noted scalability in terms of L sub eff to L sub gate. The extrinsic S/D series resistance (R sub S/D) and the parasitic G-S/D capacitance (C sub GS/D) are also examined.
Author: Christian Piguet
Publisher: CRC Press
ISBN: 1420036505
Category : Technology & Engineering
Languages : en
Pages : 438
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Book Description
The power consumption of microprocessors is one of the most important challenges of high-performance chips and portable devices. In chapters drawn from Piguet's recently published Low-Power Electronics Design, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools addresses the design of low-power circuitry in deep submicron technologies. It provides a focused reference for specialists involved in designing low-power circuitry, from transistors to logic gates. The book is organized into three broad sections for convenient access. The first examines the history of low-power electronics along with a look at emerging and possible future technologies. It also considers other technologies, such as nanotechnologies and optical chips, that may be useful in designing integrated circuits. The second part explains the techniques used to reduce power consumption at low levels. These include clock gating, leakage reduction, interconnecting and communication on chips, and adiabatic circuits. The final section discusses various CAD tools for designing low-power circuits. This section includes three chapters that demonstrate the tools and low-power design issues at three major companies that produce logic synthesizers. Providing detailed examinations contributed by leading experts, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools supplies authoritative information on how to design and model for high performance with low power consumption in modern integrated circuits. It is a must-read for anyone designing modern computers or embedded systems.
Author: Ibrahim (Abe) M. Elfadel
Publisher: Springer
ISBN: 3030046664
Category : Technology & Engineering
Languages : en
Pages : 694
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Book Description
This book provides readers with an up-to-date account of the use of machine learning frameworks, methodologies, algorithms and techniques in the context of computer-aided design (CAD) for very-large-scale integrated circuits (VLSI). Coverage includes the various machine learning methods used in lithography, physical design, yield prediction, post-silicon performance analysis, reliability and failure analysis, power and thermal analysis, analog design, logic synthesis, verification, and neuromorphic design. Provides up-to-date information on machine learning in VLSI CAD for device modeling, layout verifications, yield prediction, post-silicon validation, and reliability; Discusses the use of machine learning techniques in the context of analog and digital synthesis; Demonstrates how to formulate VLSI CAD objectives as machine learning problems and provides a comprehensive treatment of their efficient solutions; Discusses the tradeoff between the cost of collecting data and prediction accuracy and provides a methodology for using prior data to reduce cost of data collection in the design, testing and validation of both analog and digital VLSI designs. From the Foreword As the semiconductor industry embraces the rising swell of cognitive systems and edge intelligence, this book could serve as a harbinger and example of the osmosis that will exist between our cognitive structures and methods, on the one hand, and the hardware architectures and technologies that will support them, on the other....As we transition from the computing era to the cognitive one, it behooves us to remember the success story of VLSI CAD and to earnestly seek the help of the invisible hand so that our future cognitive systems are used to design more powerful cognitive systems. This book is very much aligned with this on-going transition from computing to cognition, and it is with deep pleasure that I recommend it to all those who are actively engaged in this exciting transformation. Dr. Ruchir Puri, IBM Fellow, IBM Watson CTO & Chief Architect, IBM T. J. Watson Research Center
Author: Saraju Mohanty
Publisher: McGraw Hill Professional
ISBN: 0071823034
Category : Technology & Engineering
Languages : en
Pages : 829
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Book Description
Covering both the classical and emerging nanoelectronic technologies being used in mixed-signal design, this book addresses digital, analog, and memory components. Winner of the Association of American Publishers' 2016 PROSE Award in the Textbook/Physical Sciences & Mathematics category. Nanoelectronic Mixed-Signal System Design offers professionals and students a unified perspective on the science, engineering, and technology behind nanoelectronics system design. Written by the director of the NanoSystem Design Laboratory at the University of North Texas, this comprehensive guide provides a large-scale picture of the design and manufacturing aspects of nanoelectronic-based systems. It features dual coverage of mixed-signal circuit and system design, rather than just digital or analog-only. Key topics such as process variations, power dissipation, and security aspects of electronic system design are discussed. Top-down analysis of all stages--from design to manufacturing Coverage of current and developing nanoelectronic technologies--not just nano-CMOS Describes the basics of nanoelectronic technology and the structure of popular electronic systems Reveals the techniques required for design excellence and manufacturability
Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
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Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
