Author: Ben Murdin
Publisher: Springer Science & Business Media
ISBN: 1402084250
Category : Technology & Engineering
Languages : en
Pages : 195
Book Description
Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.
Narrow Gap Semiconductors 2007
Author: Ben Murdin
Publisher: Springer Science & Business Media
ISBN: 1402084250
Category : Technology & Engineering
Languages : en
Pages : 195
Book Description
Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.
Publisher: Springer Science & Business Media
ISBN: 1402084250
Category : Technology & Engineering
Languages : en
Pages : 195
Book Description
Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.
Narrow Gap Semiconductors 2007
Author: Ben Murdin
Publisher: Springer
ISBN: 9789048119929
Category : Technology & Engineering
Languages : en
Pages : 216
Book Description
Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.
Publisher: Springer
ISBN: 9789048119929
Category : Technology & Engineering
Languages : en
Pages : 216
Book Description
Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.
Narrow-gap Semiconductors
Author:
Publisher:
ISBN:
Category : Narrow gap semiconductors
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category : Narrow gap semiconductors
Languages : en
Pages : 0
Book Description
Narrow-gap Semiconductors
Author: Ralf Dornhaus
Publisher: Springer Verlag
ISBN: 9780387120911
Category : Science
Languages : en
Pages : 0
Book Description
Publisher: Springer Verlag
ISBN: 9780387120911
Category : Science
Languages : en
Pages : 0
Book Description
Narrow Gap Semiconductors
Author: Junichiro Kono
Publisher: CRC Press
ISBN:
Category : Science
Languages : en
Pages : 648
Book Description
This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.
Publisher: CRC Press
ISBN:
Category : Science
Languages : en
Pages : 648
Book Description
This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.
Physics and Properties of Narrow Gap Semiconductors
Author: Junhao Chu
Publisher: Springer Science & Business Media
ISBN: 0387748016
Category : Science
Languages : en
Pages : 613
Book Description
Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
Publisher: Springer Science & Business Media
ISBN: 0387748016
Category : Science
Languages : en
Pages : 613
Book Description
Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
Narrow-Gap Semiconductors and Related Materials, Proceedings of the INT Conference on Narrow-Gap Semiconductors and Related Materials, NIST, Gaithersburg, June 12-15, 1989
Author: David G. Seiler
Publisher: CRC Press
ISBN: 9780852742105
Category : Science
Languages : en
Pages : 364
Book Description
The special characteristics of narrow-gap semiconductors have long been recognised, not only for their interesting physical effects, but also for their technological applications. Such materials are found across a wide range of elements, compounds and alloys. The International Conference on Narrow-gap Semiconductors and Materials (NIST, Gaithersburg) reviewed past research into the physics of both materials and devices, and summarised the present position, in the light of recent rapid developments in the semiconductor field. This major conference, the first of its kind since 1981, drew together 158 delegates from 14 countries. Invited reviews and invited and contributed papers covered III-VI, III-V and IV-VI compounds and various alloys. Topics considered ranged from the characterisation of artifically structured materials to the physics of infrared detector devices, as well as a review of high-Tc superconductors for infrared detection; this diversity is reflected in the reviews and papers presented here. This book will be of value to all scientists and engineers interested in narrow-gap semiconductors and needing to keep up to date with the rapid advances in this area.
Publisher: CRC Press
ISBN: 9780852742105
Category : Science
Languages : en
Pages : 364
Book Description
The special characteristics of narrow-gap semiconductors have long been recognised, not only for their interesting physical effects, but also for their technological applications. Such materials are found across a wide range of elements, compounds and alloys. The International Conference on Narrow-gap Semiconductors and Materials (NIST, Gaithersburg) reviewed past research into the physics of both materials and devices, and summarised the present position, in the light of recent rapid developments in the semiconductor field. This major conference, the first of its kind since 1981, drew together 158 delegates from 14 countries. Invited reviews and invited and contributed papers covered III-VI, III-V and IV-VI compounds and various alloys. Topics considered ranged from the characterisation of artifically structured materials to the physics of infrared detector devices, as well as a review of high-Tc superconductors for infrared detection; this diversity is reflected in the reviews and papers presented here. This book will be of value to all scientists and engineers interested in narrow-gap semiconductors and needing to keep up to date with the rapid advances in this area.
Physics of narrow gap semiconductors
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Narrow-gap Semiconductors and Related Materials
Author: C. L. Littler
Publisher:
ISBN:
Category : Gaithersburg, MD
Languages : en
Pages : 345
Book Description
Publisher:
ISBN:
Category : Gaithersburg, MD
Languages : en
Pages : 345
Book Description
Narrow -Gap Semiconductors
Author: G. Nimtz
Publisher:
ISBN:
Category :
Languages : it
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : it
Pages :
Book Description