Nanostructures À Base de Semi-conducteurs Nitrures Pour L'émission Ultraviolette PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Nanostructures À Base de Semi-conducteurs Nitrures Pour L'émission Ultraviolette PDF full book. Access full book title Nanostructures À Base de Semi-conducteurs Nitrures Pour L'émission Ultraviolette by Chalermchai Himwas. Download full books in PDF and EPUB format.
Author: Chalermchai Himwas
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
This work reports on the design, epitaxial growth, and the structural, and optical characterization of two types of nanostructures, namely AlGaN/AlN Stranski-Krastanov quantum dots (SK-QD) and AlGaN/AlN nanodisks (NDs) on GaN nanowires (NWs). These nanostructures were grown using plasma-assisted molecular beam epitaxy (PA-MBE) and were conceived to be the active media of electron-pumped ultraviolet (EPUV) emitters for water purification, operating in mid-ultraviolet range. The peak emission wavelength of three-dimensional SK-QD can be tuned in mid-ultraviolet range while keeping high internal quantum efficiency (IQE > 35%) by modifying the Al composition and the QD geometry. The efficient carrier confinement was confirmed by the stability of the photoluminescence intensity and decay time with temperature. The optimal deposited amount of AlGaN in AlGaN/AlN QDs which grants maximum luminescence at room temperature was determined by finding a compromise between the designs providing maximum IQE and maximum QD density. The effect of the variation of the QD height/base-diameter ratio on the interband and intraband optical properties was explored by fitting the experimental data with three-dimensional calculations of the band diagram and quantum levels. Regarding AlGaN/AlN NDs on GaN NWs, the Al-Ga intermixing at Al(Ga)N/GaN interfaces and the alloy inhomogeneity in AlGaN/AlN NDs are attributed to the strain relaxation process. This interpretation was proved by correlation of experimental data with three-dimensional strain distribution calculations performed on structures that imitate the real growth sequence. Despite the challenge of inhomogeneity, the emission wavelength of AlGaN/AlN NDs can be tuned in mid-ultraviolet range while preserving high IQE by adjusting the ND thickness and Al content. A prototype of EPUV emitter was fabricated using the AlGaN/AlN SK-QDs active region with proposed optimal design of active region thickness, AlN barrier thickness, and amount of AlGaN in each QD layer. For this first device, SiC was used as a substrate to prevent problems associated to charge or heat evacuation. A water purification test by such prototype EPUV emitter was carried out by irradiating E-coli bacteria, showing that all the specimens were successfully purified at the predicted ultraviolet dose.
Author: Chalermchai Himwas
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
This work reports on the design, epitaxial growth, and the structural, and optical characterization of two types of nanostructures, namely AlGaN/AlN Stranski-Krastanov quantum dots (SK-QD) and AlGaN/AlN nanodisks (NDs) on GaN nanowires (NWs). These nanostructures were grown using plasma-assisted molecular beam epitaxy (PA-MBE) and were conceived to be the active media of electron-pumped ultraviolet (EPUV) emitters for water purification, operating in mid-ultraviolet range. The peak emission wavelength of three-dimensional SK-QD can be tuned in mid-ultraviolet range while keeping high internal quantum efficiency (IQE > 35%) by modifying the Al composition and the QD geometry. The efficient carrier confinement was confirmed by the stability of the photoluminescence intensity and decay time with temperature. The optimal deposited amount of AlGaN in AlGaN/AlN QDs which grants maximum luminescence at room temperature was determined by finding a compromise between the designs providing maximum IQE and maximum QD density. The effect of the variation of the QD height/base-diameter ratio on the interband and intraband optical properties was explored by fitting the experimental data with three-dimensional calculations of the band diagram and quantum levels. Regarding AlGaN/AlN NDs on GaN NWs, the Al-Ga intermixing at Al(Ga)N/GaN interfaces and the alloy inhomogeneity in AlGaN/AlN NDs are attributed to the strain relaxation process. This interpretation was proved by correlation of experimental data with three-dimensional strain distribution calculations performed on structures that imitate the real growth sequence. Despite the challenge of inhomogeneity, the emission wavelength of AlGaN/AlN NDs can be tuned in mid-ultraviolet range while preserving high IQE by adjusting the ND thickness and Al content. A prototype of EPUV emitter was fabricated using the AlGaN/AlN SK-QDs active region with proposed optimal design of active region thickness, AlN barrier thickness, and amount of AlGaN in each QD layer. For this first device, SiC was used as a substrate to prevent problems associated to charge or heat evacuation. A water purification test by such prototype EPUV emitter was carried out by irradiating E-coli bacteria, showing that all the specimens were successfully purified at the predicted ultraviolet dose.
Author: Fabien Guillot
Publisher:
ISBN:
Category :
Languages : fr
Pages : 184
Get Book Here
Book Description
Ce travail a consisté en la croissance (par épitaxie à jets moléculaires) et la caractérisation de nanostructures à base de semiconducteurs nitrures (GaN, AlN et alliages) afin de développer de composants optoélectroniques avancés basés sur les transitions intrabandes pour la prochaine génération de systèmes de télécommunications à très haut débit. Une première série de résultats concerne la croissance de couches minces de nitrures, notamment celle des alliages d'AlGaN. D'après notre étude, la croissance de couches dont la fraction molaire d'Al reste en deçà de 35 % nécessite la présence d'un excès de Ga. Au delà, il est nécessaire d'utiliser l'In en tant que surfactant ou bien de réaliser des superalliages GaN/AlN. Des études du dopage Si de ce type de structures ont été menées. Nous avons ensuite étudié des structures à multicouches de puits quantiques GaN/AlN dopées Si. Celles-ci présentent les pics d'absorption ISB polarisée p à des longueurs d'onde de la gamme des télécommunications à température ambiante. L'effet de divers paramètres de croissance et de design a été étudié. L'analyse des caractérisations de ces échantillons a permis d'évaluer le champ électrique interne ainsi que l'offset de bande de conduction entre le GaN et l'AlN de nos structures. Concernant la synthèse des structures multicouches de boîtes quantiques GaN/AlN dopées Si, nous avons adapté la technique de croissance de ces structures pour minimiser la taille de boîtes, et ce, de manière à ce que leur absorption intrabande puisse atteindre les longueurs d'onde des télécommunications optiques. L'énergie du pic d'absorption des boîtes peut être ajustée en modifiant la quantité de GaN dans les boîtes, la température de croissance, et le temps d'interruption de croissance. Enfin, les résultats obtenus sur la réalisation de composants sont développés. Nous nous sommes focalisés sur les dispositifs basés sur l'absorption (photodétecteurs à puits et à boites quantiques, modulateurs électro-optiques) et l'émission de lumière infrarouge dans la gamme de longueurs d'onde des télécommunications. Des résultats prometteurs ont été obtenus sur l'ensemble de ces composants, ils forment une première étape vers la fabrication de composants pour les télécommunications à base de semiconducteurs nitrures.
Author: Baptiste Polteau
Publisher:
ISBN:
Category :
Languages : fr
Pages : 0
Get Book Here
Book Description
Dans le but d'améliorer le rendement des cellules à colorant de type p (DSSC-p), ces travaux s'attachent à la synthèse et la caractérisation de matériaux semi-conducteurs de type p (SCs-p) sous forme de nanoparticules. En ce sens, des SCs-p répondant à un cahier des charges (bande de valence basse en énergie, grande surface spécifique, bon conducteur et bonne transparence) ont été étudiés. Dans ce cadre, une stratégie a été développée pour améliorer les propriétés de NiO (l'actuel matériau de référence) en optimisant sa nanostructuration, sa forte non-stœchiométrie en nickel et par son dopage à l'azote, paramètres tous favorables à la stabilisation de la valence mixte Ni3+/Ni2+, origine de la conductivité de type p. Cette longue étude a été initiée à partir d'un précurseur de nickel original nanostructuré Ni3O2(OH)4, à forte valence mixte Ni3+/Ni2+. La décomposition sous air et sous ammoniac de ce précurseur à basse température (250 °C) a permis de préparer Ni1-xO nanostructuré, fortement non-stœchiométrique (VNi = 25 %), de grande surface spécifique (240 m2.g-1) et dopé azote (NiO:N). De plus, deux matériaux non oxydes à structure delafossite, que sont les carbodiimides de nickel (NiNCN) et de manganèse (MnNCN) ont été préparés et caractérisés comme de nouveaux semi-conducteurs de type p, permettant de monter la première DSSC-p à base de NiNCN.
Author: Abdelkarim Kahouli
Publisher:
ISBN:
Category :
Languages : fr
Pages : 166
Get Book Here
Book Description
Ce travail concerne la croissance par épitaxie sous jets moléculaires, les propriétés structurales et optiques de nanostructures GaN polaires (0001) et semi-polaires (11 2 2) dans une matrice d’Al0,5Ga0,5N. Le but de ce travail est d’améliorer l’efficacité radiative des nitrures dans le domaine UV. Nous avons tout d’abord étudié la croissance et les propriétés de boîtes quantiques GaN/Al0,5Ga0,5N polaires. Ces structures ont la particularité d’être soumises à un fort champ électrique interne de l’ordre de 3500 kV/cm. Ce champ est responsable du décalage vers le rouge des énergies de transition des boîtes quantiques ainsi que de la réduction de leur force d’oscillateur lorsque leur hauteur augmente. Nous nous sommes intéressés également à la croissance de nanostructures GaN/Al0,5Ga0,5N (11 2 2) semi-polaires. Ces nanostructures ont une forme anisotrope, elles sont allongées et alignées suivant la direction [1100]. Nous avons ensuite étudié et comparé les propriétés optiques des nanostructures en fonction de leur orientation. Cette étude nous a permis d’estimer une valeur du champ électrique interne dans les nanostructures semi-polaires de 450 kV/cm seulement. La conséquence de ce faible champ électrique est une émission décalée dans l’ultraviolet (310 - 340 nm), une largeur à mi-hauteur étroite de l’ordre de 90 meV ainsi qu’une durée de vie radiative courte (330 ps). Finalement, nous démontrons pour la première fois une diode électroluminescente à base de boîtes quantiques GaN/Al0,5Ga0,5N polaires émettant dans l’UV (380 nm).
Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1848162235
Category : Technology & Engineering
Languages : en
Pages : 477
Get Book Here
Book Description
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Author: Dunwei Wang
Publisher: World Scientific
ISBN: 1786343649
Category : Science
Languages : en
Pages : 836
Get Book Here
Book Description
The use of nanomaterials in energy conversion and storage represents an opportunity to improve the performance, density and ease of transportation in renewable resources. This book looks at the most recent research on the topic, with particular focus on artificial photosynthesis and lithium-ion batteries as the most promising technologies to date. Research on the broad subject of energy conversion and storage calls for expertise from a wide range of backgrounds, from the most fundamental perspectives of the key catalytic processes at the molecular level to device scale engineering and optimization. Although the nature of the processes dictates that electrochemistry is a primary characterization tool, due attention is given to advanced techniques such as synchrotron studies in operando. These studies look at the gap between the performance of current technology and what is needed for the future, for example how to improve on the lithium-ion battery and to go beyond its capabilities.Suitable for students and practitioners in the chemical, electrochemical, and environmental sciences, Nanomaterials for Energy Conversion and Storage provides the information needed to find scalable, economically viable and safe solutions for sustainable energy.
Author: Rolf Binder
Publisher: World Scientific
ISBN: 9813148764
Category : Science
Languages : en
Pages : 517
Get Book Here
Book Description
This book provides a comprehensive state-of-the-art overview of the optical properties of graphene. During the past decade, graphene, the most ideal and thinnest of all two-dimensional materials, has become one of the most widely studied materials. Its unique properties hold great promise to revolutionize many electronic, optical and opto-electronic devices. The book contains an introductory tutorial and 13 chapters written by experts in areas ranging from fundamental quantum mechanical properties to opto-electronic device applications of graphene.
Author: M.O. Manasreh
Publisher: Elsevier
ISBN: 0080534449
Category : Science
Languages : en
Pages : 463
Get Book Here
Book Description
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author: M. Muruganant
Publisher: Springer
ISBN: 9811048193
Category : Technology & Engineering
Languages : en
Pages : 403
Get Book Here
Book Description
This volume comprises the select proceedings of FiMPART 2015. The volume covers advances in major areas of materials research under one umbrella. This volume covers all aspects of materials research, processing, fabrication, structure/property evaluation, applications of ferrous, non-ferrous, ceramic, polymeric materials and composites including biomaterials, materials for energy, fuel cells/hydrogen storage technologies, batteries, super-capacitors, nano-materials for energy and structural applications, aerospace structural metallic materials, bulk metallic glasses and other advanced materials. The book will be useful to researchers, students, and professional working in areas related to materials innovation and applications.
Author: Paolo Mele
Publisher:
ISBN: 9781536160864
Category : Zinc oxide thin films
Languages : en
Pages : 0
Get Book Here
Book Description
Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films.
