Nanoscaled Semiconductor-on-Insulator Structures and Devices PDF Download
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Author: S. Hall
Publisher: Springer
ISBN: 1402063806
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.
Author: S. Hall
Publisher: Springer
ISBN: 1402063806
Category : Technology & Engineering
Languages : en
Pages : 377
Get Book Here
Book Description
This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.
Author: S. Hall
Publisher: Springer Science & Business Media
ISBN: 1402063784
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 038771751X
Category : Technology & Engineering
Languages : en
Pages : 350
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Book Description
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Author: Alexei N. Nazarov
Publisher: Trans Tech Publications Ltd
ISBN: 3038136158
Category : Technology & Engineering
Languages : en
Pages : 199
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Book Description
Selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine
Author: Francis Balestra
Publisher: John Wiley & Sons
ISBN: 1118622472
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Author: Davies William de Lima Monteiro
Publisher: The Electrochemical Society
ISBN: 1566777372
Category : Science
Languages : en
Pages : 639
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Book Description
This issue of ECS Transactions features eight invited and sixty-seven regular papers on technology, devices, systems, optoelectronics, modeling and characterization; all either directly or indirectly related to microelectronics. The topics presented herein reveal the multidisciplinary character of this field, which definitely incites the highly cooperative trace of human nature.
Author: M. Cahay
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 682
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Book Description
Author: Geert Hellings
Publisher: Springer Science & Business Media
ISBN: 9400763409
Category : Technology & Engineering
Languages : en
Pages : 154
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Book Description
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
Author: Dae-Won Ha
Publisher:
ISBN:
Category :
Languages : en
Pages : 334
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Book Description
Author: Balwinder Raj
Publisher: CRC Press
ISBN: 1000637506
Category : Technology & Engineering
Languages : en
Pages : 259
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Book Description
This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.
