Author: Alexei N. Nazarov
Publisher: Trans Tech Publications Ltd
ISBN: 3038136158
Category : Technology & Engineering
Languages : en
Pages : 199
Book Description
Selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices
Author: Alexei N. Nazarov
Publisher: Trans Tech Publications Ltd
ISBN: 3038136158
Category : Technology & Engineering
Languages : en
Pages : 199
Book Description
Selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine
Publisher: Trans Tech Publications Ltd
ISBN: 3038136158
Category : Technology & Engineering
Languages : en
Pages : 199
Book Description
Selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine
Semiconductor-On-Insulator Materials for Nanoelectronics Applications
Author: Alexei Nazarov
Publisher: Springer Science & Business Media
ISBN: 3642158684
Category : Technology & Engineering
Languages : en
Pages : 437
Book Description
"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Publisher: Springer Science & Business Media
ISBN: 3642158684
Category : Technology & Engineering
Languages : en
Pages : 437
Book Description
"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Integration of Functional Oxides with Semiconductors
Author: Alexander A. Demkov
Publisher: Springer Science & Business Media
ISBN: 146149320X
Category : Technology & Engineering
Languages : en
Pages : 284
Book Description
This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
Publisher: Springer Science & Business Media
ISBN: 146149320X
Category : Technology & Engineering
Languages : en
Pages : 284
Book Description
This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
Frontiers In Electronics - Selected Papers From The Workshop On Frontiers In Electronics 2015 (Wofe-15)
Author: Sorin Cristoloveanu
Publisher: World Scientific
ISBN: 981322083X
Category : Technology & Engineering
Languages : en
Pages : 174
Book Description
Rapid pace of electronic technology evolution and current economic climate compel a merger of such technical areas as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology.This Workshop aims at encouraging active cross-fertilization of the different 'species' in this electronic planet. The WOFE2015 had gather experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms.This Monographs includes ten invited articles; cover topics ranging from Ultra-thin silicon nanowire solar cells, to hydrogen generation under illumination of GaN-based structures and from ultrafast response of nanoscale device structures to Power device optimization.
Publisher: World Scientific
ISBN: 981322083X
Category : Technology & Engineering
Languages : en
Pages : 174
Book Description
Rapid pace of electronic technology evolution and current economic climate compel a merger of such technical areas as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology.This Workshop aims at encouraging active cross-fertilization of the different 'species' in this electronic planet. The WOFE2015 had gather experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms.This Monographs includes ten invited articles; cover topics ranging from Ultra-thin silicon nanowire solar cells, to hydrogen generation under illumination of GaN-based structures and from ultrafast response of nanoscale device structures to Power device optimization.
Nanoscale Semiconductors
Author: Balwinder Raj
Publisher: CRC Press
ISBN: 1000637506
Category : Technology & Engineering
Languages : en
Pages : 259
Book Description
This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.
Publisher: CRC Press
ISBN: 1000637506
Category : Technology & Engineering
Languages : en
Pages : 259
Book Description
This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.
Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting
Author: Alexei Nazarov
Publisher: Springer
ISBN: 3319088041
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.
Publisher: Springer
ISBN: 3319088041
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.
Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices
Author: Halyna Khlyap
Publisher: Bentham Science Publishers
ISBN: 1608050211
Category : Science
Languages : en
Pages : 134
Book Description
"This well organized reference book covers the newest and most important practically applicable results in thin film-based semiconductor (A2B6-A4B6 and chalcogenide) sensors, heterojunction-based active elements and other devices. This book is written for "
Publisher: Bentham Science Publishers
ISBN: 1608050211
Category : Science
Languages : en
Pages : 134
Book Description
"This well organized reference book covers the newest and most important practically applicable results in thin film-based semiconductor (A2B6-A4B6 and chalcogenide) sensors, heterojunction-based active elements and other devices. This book is written for "
Stress and Strain Engineering at Nanoscale in Semiconductor Devices
Author: Chinmay K. Maiti
Publisher: CRC Press
ISBN: 1000404935
Category : Science
Languages : en
Pages : 275
Book Description
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Publisher: CRC Press
ISBN: 1000404935
Category : Science
Languages : en
Pages : 275
Book Description
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Materials for Sustainable Energy Storage at the Nanoscale
Author: Fabian Ifeanyichukwu Ezema
Publisher: CRC Press
ISBN: 1000894185
Category : Science
Languages : en
Pages : 747
Book Description
The book Materials for Sustainable Energy Storage Devices at the Nanoscale anticipates covering all electrochemical energy storage devices such as supercapacitors, lithium-ion batteries (LIBs), and fuel cells, transformation and enhancement materials for solar cells, photocatalysis, etc. The focal objective of the book is to deliver stunning and current information to the materials application at nanoscale to researchers and scientists in our contemporary time towardthe enhancement of energy conversion and storage devices. However, the contents of the proposed book, Materials for Sustainable Energy Storage at the Nanoscale, will cover various fundamental principles and wide knowledge of different energy conversion and storage devices with respect to their advancement due to the emergence of nanoscale materials for sustainable storage devices. This book is targeted to be award-winning as well as a reference book for researchers and scientists working on different types of nanoscale materials-based energy storage and conversion devices. Features Comprehensive overview of energy storage devices, an important field of interest for researchers worldwide Explores the importance and growing impact of batteries and supercapacitors Emphasizes the fundamental theories, electrochemical mechanism, and its computational view point and discusses recent developments in electrode designing based on nanomaterials, separators, and fabrication of advanced devices and their performances Fabian I. Ezema is a professor at the University of Nigeria, Nsukka. He earned a PhD in Physics and Astronomy from the University of Nigeria, Nsukka. His research focused on several areas of Materials Science, from synthesis and characterizations of particles and thin-film materials through chemical routes with emphasis on energy applications. For the last 15 years, he has been working on energy conversion and storage (cathodes, anodes, supercapacitors, solar cells, among others), including novel methods of synthesis, characterization and evaluation of the electrochemical and optical properties. He has published about 180 papers in various international journals and given over 50 talks at various conferences. His h-index is 21 with over 1500 citations and he has served as reviewer for several high impact journals and as an editorial board member. Dr. M.Anusuya, M.Sc., M.Phil., B.Ed., PhD is specialized in Material science, Thin Film Technology, Nano Science, and Crystallography. She is working as a Registrar of Indra Ganesan Group of Institutions, Trichy, Tamilnadu, India. Earlier to this, she served as a Vice-Principal at Trichy Engineering College, Trichy, Tamilnadu, India.. Being an administrator and teacher, with more than 25 years’ experience, for her perpetual excellence in academics she has been recognized with many awards. She has received over 45 awards in Academic and Social Activity. She has published more than 30 research papers in National and International journals, 7 chapters in edited books, 5 patents, presented 50 papers in the conferences and organized more than 200 webinars, both national and internationally. Dr Assumpta C. Nwanya is a Lecturer and a FLAIR (Future Leaders - African Independent Research) Scholar at the Department of Physics and Astronomy, University of Nigeria, Nsukka. She obtained her PhD in 2017 (University of Nigeria, Nsukka) with specialisation in the synthesis of nanostructured materials for applications in photovoltaics and electrochemical energy storage (batteries and supercapacitors) as well as for sensing. She was a Postdoctoral Fellow under the UNESCO-University of South Africa (UNISA) Africa Chair in Nanoscience and Nanotechnology (2018-2020). She is a research Affiliate with the SensorLab, University of the Western Cape Sensor Laboratories, Cape Town, South Africa. Dr Nwanya is a very active researcher and has published more than 85 scientific articles in high impact journals and has a Google Scholar’s H-index of 24 and 1475 citations.
Publisher: CRC Press
ISBN: 1000894185
Category : Science
Languages : en
Pages : 747
Book Description
The book Materials for Sustainable Energy Storage Devices at the Nanoscale anticipates covering all electrochemical energy storage devices such as supercapacitors, lithium-ion batteries (LIBs), and fuel cells, transformation and enhancement materials for solar cells, photocatalysis, etc. The focal objective of the book is to deliver stunning and current information to the materials application at nanoscale to researchers and scientists in our contemporary time towardthe enhancement of energy conversion and storage devices. However, the contents of the proposed book, Materials for Sustainable Energy Storage at the Nanoscale, will cover various fundamental principles and wide knowledge of different energy conversion and storage devices with respect to their advancement due to the emergence of nanoscale materials for sustainable storage devices. This book is targeted to be award-winning as well as a reference book for researchers and scientists working on different types of nanoscale materials-based energy storage and conversion devices. Features Comprehensive overview of energy storage devices, an important field of interest for researchers worldwide Explores the importance and growing impact of batteries and supercapacitors Emphasizes the fundamental theories, electrochemical mechanism, and its computational view point and discusses recent developments in electrode designing based on nanomaterials, separators, and fabrication of advanced devices and their performances Fabian I. Ezema is a professor at the University of Nigeria, Nsukka. He earned a PhD in Physics and Astronomy from the University of Nigeria, Nsukka. His research focused on several areas of Materials Science, from synthesis and characterizations of particles and thin-film materials through chemical routes with emphasis on energy applications. For the last 15 years, he has been working on energy conversion and storage (cathodes, anodes, supercapacitors, solar cells, among others), including novel methods of synthesis, characterization and evaluation of the electrochemical and optical properties. He has published about 180 papers in various international journals and given over 50 talks at various conferences. His h-index is 21 with over 1500 citations and he has served as reviewer for several high impact journals and as an editorial board member. Dr. M.Anusuya, M.Sc., M.Phil., B.Ed., PhD is specialized in Material science, Thin Film Technology, Nano Science, and Crystallography. She is working as a Registrar of Indra Ganesan Group of Institutions, Trichy, Tamilnadu, India. Earlier to this, she served as a Vice-Principal at Trichy Engineering College, Trichy, Tamilnadu, India.. Being an administrator and teacher, with more than 25 years’ experience, for her perpetual excellence in academics she has been recognized with many awards. She has received over 45 awards in Academic and Social Activity. She has published more than 30 research papers in National and International journals, 7 chapters in edited books, 5 patents, presented 50 papers in the conferences and organized more than 200 webinars, both national and internationally. Dr Assumpta C. Nwanya is a Lecturer and a FLAIR (Future Leaders - African Independent Research) Scholar at the Department of Physics and Astronomy, University of Nigeria, Nsukka. She obtained her PhD in 2017 (University of Nigeria, Nsukka) with specialisation in the synthesis of nanostructured materials for applications in photovoltaics and electrochemical energy storage (batteries and supercapacitors) as well as for sensing. She was a Postdoctoral Fellow under the UNESCO-University of South Africa (UNISA) Africa Chair in Nanoscience and Nanotechnology (2018-2020). She is a research Affiliate with the SensorLab, University of the Western Cape Sensor Laboratories, Cape Town, South Africa. Dr Nwanya is a very active researcher and has published more than 85 scientific articles in high impact journals and has a Google Scholar’s H-index of 24 and 1475 citations.
Springer Handbook of Semiconductor Devices
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.