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Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670212
Category : Science
Languages : en
Pages : 414
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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670212
Category : Science
Languages : en
Pages : 414
Get Book Here
Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: Mark Lundstrom
Publisher: Springer Science & Business Media
ISBN: 0387280030
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Author: Sandip Tiwari
Publisher:
ISBN: 019875986X
Category : Science
Languages : en
Pages : 832
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Book Description
This text brings together traditional solid-state approaches from the 20th century with developments of the early part of the 21st century, to reach an understanding of semiconductor physics in its multifaceted forms. It reveals how an understanding of what happens within the material can lead to insights into what happens in its use.
Author: Benoit Deveaud
Publisher: John Wiley & Sons
ISBN: 3527610162
Category : Science
Languages : en
Pages : 328
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Book Description
Electron and photon confinement in semiconductor nanostructures is one of the most active areas in solid state research. Written by leading experts in solid state physics, this book provides both a comprehensive review as well as a excellent introduction to fundamental and applied aspects of light-matter coupling in microcavities. Topics covered include parametric amplification and polariton liquids, quantum fluid and non-linear dynamical effects and parametric instabilities, polariton squeezing, Bose-Einstein condensation of microcavity polaritons, spin dynamics of exciton-polaritons, polariton correlation produced by parametric scattering, progress in III-nitride distributed Bragg reflectors using AlInN/GaN materials, high efficiency planar MCLEDs, exciton-polaritons and nanoscale cavities in photonic crystals, and MBE growth of high finesse microcavities.
Author: Rudolf Gross
Publisher: Springer
ISBN: 9781402051050
Category : Technology & Engineering
Languages : en
Pages : 378
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Book Description
This book collects papers on the fundamentals and applications of nanoscale devices, first presented at the NATO Advanced Research Workshop on Nanoscale Devices – Fundamentals and Applications held in Kishinev, Moldova, in September 2004. The focus is on the synthesis and characterization of nanoscale magnetic materials; fundamental physics and materials aspects of solid-state nanostructures; development of novel device concepts and design principles for nanoscale devices; and on applications in electronics with emphasis on defence against the threat of terrorism.
Author: Malin Premaratne
Publisher: Cambridge University Press
ISBN: 1108475663
Category : Science
Languages : en
Pages : 299
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Book Description
This self-contained text describes the underlying theory and approximate quantum models of real nanodevices for nanotechnology applications.
Author: Khurshed Ahmad Shah
Publisher: CRC Press
ISBN: 1000163563
Category : Science
Languages : en
Pages : 265
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Book Description
Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book: Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices Includes rigorous mathematical derivations of the semiconductor physics Illustrates major concepts thorough discussions and various diagrams
Author: Katerina Raleva
Publisher: Morgan & Claypool Publishers
ISBN: 1681741873
Category : Science
Languages : en
Pages : 148
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Book Description
It is generally acknowledged that modeling and simulation are preferred alternatives to trial and error approaches to semiconductor fabrication in the present environment, where the cost of process runs and associated mask sets is increasing exponentially with successive technology nodes. Hence, accurate physical device simulation tools are essential to accurately predict device and circuit performance. Accurate thermal modelling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transport. This book aims to bridge that gap. Efficient heat removal methods are necessary to increase device performance and device reliability. The authors provide readers with a combination of nanoscale experimental techniques and accurate modelling methods that must be employed in order to determine a device's temperature profile.
Author: Shunri Oda
Publisher: CRC Press
ISBN: 1482228688
Category : Technology & Engineering
Languages : en
Pages : 300
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Book Description
Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Author: Tibor Grasser
Publisher: Springer Nature
ISBN: 3030375005
Category : Technology & Engineering
Languages : en
Pages : 724
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Book Description
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
