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Author: Roozbeh Parsa
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 134
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Book Description
CMOS scaling has been very successful in generating small, fast, low cost electronics. However, in advanced CMOS nodes, the total power consumption is dominated by the static power dissipation, which is caused greatly by gate leakage, short channel effects, and finite subthreshold slope. Further scaling of CMOS only exacerbates these problems. Nanoelectromechanical (NEM) relays are promising devices for assisting CMOS systems by reducing the static power dissipation due to their zero leakage current, infinite subthreshold slope, and scalable actuation voltage. Electrostatically-actuated NEM relays are devices where the operation is based on the deformation of a flexible beam under the influence of electrostatic force in order to create a conducting path between two electrodes. This work studies the fabrication process development of sidewall-coated laterally-actuated NEM relays. The developed process enables decoupling of the mechanical and electrical properties of the relay, allowing independent optimization of each property and paving the path for creating a back-end-of-line (BEOL) compatible process. Furthermore, a major failure mechanism of NEM relays is beam-to-gate shorting after actuation. To ameliorate this problem, new designs with improved mechanical properties were simulated and tested. These designs utilize a stiff electrode and a compliant beam to eliminate undesired beam deformation near the gate electrode. These results in addition to variation studies, stress outcomes, and basic logic functionality of the NEM relays are shown.
Author: Roozbeh Parsa
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 134
Get Book Here
Book Description
CMOS scaling has been very successful in generating small, fast, low cost electronics. However, in advanced CMOS nodes, the total power consumption is dominated by the static power dissipation, which is caused greatly by gate leakage, short channel effects, and finite subthreshold slope. Further scaling of CMOS only exacerbates these problems. Nanoelectromechanical (NEM) relays are promising devices for assisting CMOS systems by reducing the static power dissipation due to their zero leakage current, infinite subthreshold slope, and scalable actuation voltage. Electrostatically-actuated NEM relays are devices where the operation is based on the deformation of a flexible beam under the influence of electrostatic force in order to create a conducting path between two electrodes. This work studies the fabrication process development of sidewall-coated laterally-actuated NEM relays. The developed process enables decoupling of the mechanical and electrical properties of the relay, allowing independent optimization of each property and paving the path for creating a back-end-of-line (BEOL) compatible process. Furthermore, a major failure mechanism of NEM relays is beam-to-gate shorting after actuation. To ameliorate this problem, new designs with improved mechanical properties were simulated and tested. These designs utilize a stiff electrode and a compliant beam to eliminate undesired beam deformation near the gate electrode. These results in addition to variation studies, stress outcomes, and basic logic functionality of the NEM relays are shown.
Author: Hei Kam
Publisher: Springer
ISBN: 1493921282
Category : Technology & Engineering
Languages : en
Pages : 190
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Book Description
This volume describes the design of relay-based circuit systems from device fabrication to circuit micro-architectures. This book is ideal for both device engineers as well as circuit system designers, and highlights the importance of co-design across design hierarchies when trying to optimize system performance (in this case, energy-efficiency). The book will also appeal to researchers and engineers focused on semiconductor, integrated circuits, and energy efficient electronics.
Author: Chong-Min Kyung
Publisher: Springer
ISBN: 9401799903
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
This book describes the development of core technologies to address two of the most challenging issues in research for future IT platform development, namely innovative device design and reduction of energy consumption. Three key devices, the FinFET, the TunnelFET, and the electromechanical nanoswitch are described with extensive details of use for practical applications. Energy issues are also covered in a tutorial fashion from material physics, through device technology, to innovative circuit design. The strength of this book lies in its holistic approach dealing with material trends, state-of-the-art of key devices, new examples of circuits and systems applications. This is the first of three books based on the Integrated Smart Sensors research project, which describe the development of innovative devices, circuits, and system-level enabling technologies. The aim of the project was to develop common platforms on which various devices and sensors can be loaded, and to create systems offering significant improvements in information processing speed, energy usage, and size. The book contains extensive reference lists and with over 200 figures introduces the reader to the general subject in a tutorial style, also addressing the state-of-the-art, allowing it to be used as a guide for starting researchers in these fields.
Author: Francis Balestra
Publisher: John Wiley & Sons
ISBN: 1118985117
Category : Technology & Engineering
Languages : en
Pages : 153
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Book Description
This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.
Author: Tomasz Wojcicki
Publisher: CRC Press
ISBN: 1466599103
Category : Technology & Engineering
Languages : en
Pages : 478
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Book Description
Recently the world celebrated the 60th anniversary of the invention of the first transistor. The first integrated circuit (IC) was built a decade later, with the first microprocessor designed in the early 1970s. Today, ICs are a part of nearly every aspect of our daily lives. They help us live longer and more comfortably, and do more, faster. All this is possible because of the relentless search for new materials, circuit designs, and ideas happening on a daily basis at industrial and academic institutions around the globe. Showcasing the latest advances in very-large-scale integrated (VLSI) circuits, VLSI: Circuits for Emerging Applications provides a balanced view of industrial and academic developments beyond silicon and complementary metal–oxide–semiconductor (CMOS) technology. From quantum-dot cellular automata (QCA) to chips for cochlear implants, this must-have resource: Investigates the trend of combining multiple cores in a single chip to boost performance of the overall system Describes a novel approach to enable physically unclonable functions (PUFs) using intrinsic features of a VLSI chip Examines the VLSI implementations of major symmetric and asymmetric key cryptographic algorithms, hash functions, and digital signatures Discusses nonvolatile memories such as resistive random-access memory (Re-RAM), magneto-resistive RAM (MRAM), and floating-body RAM (FB-RAM) Explores organic transistors, soft errors, photonics, nanoelectromechanical (NEM) relays, reversible computation, bioinformatics, asynchronous logic, and more VLSI: Circuits for Emerging Applications presents cutting-edge research, design architectures, materials, and uses for VLSI circuits, offering valuable insight into the current state of the art of micro- and nanoelectronics.
Author: Lining Zhang
Publisher: Springer
ISBN: 3319316532
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Author: Simon Deleonibus
Publisher: CRC Press
ISBN: 0429858612
Category : Science
Languages : en
Pages : 284
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Book Description
The history of information and communications technologies (ICT) has been paved by both evolutive paths and challenging alternatives, so-called emerging devices and architectures. Their introduction poses the issues of state variable definition, information processing, and process integration in 2D, above IC, and in 3D. This book reviews the capabilities of integrated nanosystems to match low power and high performance either by hybrid and heterogeneous CMOS in 2D/3D or by emerging devices for alternative sensing, actuating, data storage, and processing. The choice of future ICTs will need to take into account not only their energy efficiency but also their sustainability in the global ecosystem.
Author: Jaume Verd
Publisher: MDPI
ISBN: 3039210688
Category : Technology & Engineering
Languages : en
Pages : 166
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Book Description
Micro and nano-electro-mechanical system (M/NEMS) devices constitute key technological building blocks to enable increased additional functionalities within Integrated Circuits (ICs) in the More-Than-Moore era, as described in the International Technology Roadmap for Semiconductors. The CMOS ICs and M/NEMS dies can be combined in the same package (SiP), or integrated within a single chip (SoC). In the SoC approach the M/NEMS devices are monolithically integrated together with CMOS circuitry allowing the development of compact and low-cost CMOS-M/NEMS devices for multiple applications (physical sensors, chemical sensors, biosensors, actuators, energy actuators, filters, mechanical relays, and others). On-chip CMOS electronics integration can overcome limitations related to the extremely low-level signals in sub-micrometer and nanometer scale electromechanical transducers enabling novel breakthrough applications. This Special Issue aims to gather high quality research contributions dealing with MEMS and NEMS devices monolithically integrated with CMOS, independently of the final application and fabrication approach adopted (MEMS-first, interleaved MEMS, MEMS-last or others).]
Author: Anupama B. Kaul
Publisher: CRC Press
ISBN: 1466509554
Category : Science
Languages : en
Pages : 445
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Book Description
Composed of contributions from top experts, Microelectronics to Nanoelectronics: Materials, Devices and Manufacturability offers a detailed overview of important recent scientific and technological developments in the rapidly evolving nanoelectronics arena. Under the editorial guidance and technical expertise of noted materials scientist Anupama B. Kaul of California Institute of Technology’s Jet Propulsion Lab, this book captures the ascent of microelectronics into the nanoscale realm. It addresses a wide variety of important scientific and technological issues in nanoelectronics research and development. The book also showcases some key application areas of micro-electro-mechanical-systems (MEMS) that have reached the commercial realm. Capitalizing on Dr. Kaul’s considerable technical experience with micro- and nanotechnologies and her extensive research in prestigious academic and industrial labs, the book offers a fresh perspective on application-driven research in micro- and nanoelectronics, including MEMS. Chapters explore how rapid developments in this area are transitioning from the lab to the market, where new and exciting materials, devices, and manufacturing technologies are revolutionizing the electronics industry. Although many micro- and nanotechnologies still face major scientific and technological challenges and remain within the realm of academic research labs, rapid advances in this area have led to the recent emergence of new applications and markets. This handbook encapsulates that exciting recent progress by providing high-quality content contributed by international experts from academia, leading industrial institutions—such as Hewlett-Packard—and government laboratories including the U.S. Department of Energy’s Sandia National Laboratory. Offering something for everyone, from students to scientists to entrepreneurs, this book showcases the broad spectrum of cutting-edge technologies that show significant promise for electronics and related applications in which nanotechnology plays a key role.
Author: Giorgos Fagas
Publisher: BoD – Books on Demand
ISBN: 9535130110
Category : Technology & Engineering
Languages : en
Pages : 252
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Book Description
In a previous volume (ICT-Energy-Concepts Towards Zero-Power ICT; referenced below as Vol. 1), we addressed some of the fundamentals related to bridging the gap between the amount of energy required to operate portable/mobile ICT systems and the amount of energy available from ambient sources. The only viable solution appears to be to attack the gap from both sides, i.e. to reduce the amount of energy dissipated during computation and to improve the efficiency in energy-harvesting technologies. In this book, we build on those concepts and continue the discussion on energy efficiency and sustainability by addressing the minimisation of energy consumption at different levels across the ICT system stack, from hardware to software, as well as discussing energy consumption issues in high-performance computing (HPC), data centres and communication in sensor networks. This book was realised thanks to the contribution of the project ‘Coordinating Research Efforts of the ICT-Energy Community’ funded from the European Union under the Future and Emerging Technologies (FET) area of the Seventh Framework Programme for Research and Technological Development (grant agreement n. 611004).
