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Author: Wolfgang Joppich
Publisher: Springer Science & Business Media
ISBN: 3709192536
Category : Technology & Engineering
Languages : en
Pages : 327
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Book Description
It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. This happened in dependent from each other, with a completely different background and different intentions in mind. At this time, some important monographs appeared or have been in preparation. There are the three "classical" ones, from our point of view: the so-called "1984 Guide" [12J by Brandt, the "Multi-Grid Methods and Applications" [49J by Hackbusch and the so-called "Fundamentals" [132J by Stiiben and Trottenberg. Stiiben and Trottenberg in [132J state a "delayed acceptance, resent ments" with respect to multigrid algorithms. They complain: "Nevertheless, even today's situation is still unsatisfactory in several respects. If this is true for the development of standard methods, it applies all the more to the area of really difficult, complex applications." In spite of all the above mentioned publications and without ignoring important theoretical and practical improvements of multigrid, this situa tion has not yet changed dramatically. This statement is made under the condition that a numerical principle like multigrid is "accepted", if there exist "professional" programs for research and production purposes. "Professional" in this context stands for "solving complex technical prob lems in an industrial environment by a large community of users". Such a use demands not only for fast solution methods but also requires a high robustness with respect to the physical parameters of the problem.
Author: Wolfgang Joppich
Publisher: Springer Science & Business Media
ISBN: 3709192536
Category : Technology & Engineering
Languages : en
Pages : 327
Get Book Here
Book Description
It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. This happened in dependent from each other, with a completely different background and different intentions in mind. At this time, some important monographs appeared or have been in preparation. There are the three "classical" ones, from our point of view: the so-called "1984 Guide" [12J by Brandt, the "Multi-Grid Methods and Applications" [49J by Hackbusch and the so-called "Fundamentals" [132J by Stiiben and Trottenberg. Stiiben and Trottenberg in [132J state a "delayed acceptance, resent ments" with respect to multigrid algorithms. They complain: "Nevertheless, even today's situation is still unsatisfactory in several respects. If this is true for the development of standard methods, it applies all the more to the area of really difficult, complex applications." In spite of all the above mentioned publications and without ignoring important theoretical and practical improvements of multigrid, this situa tion has not yet changed dramatically. This statement is made under the condition that a numerical principle like multigrid is "accepted", if there exist "professional" programs for research and production purposes. "Professional" in this context stands for "solving complex technical prob lems in an industrial environment by a large community of users". Such a use demands not only for fast solution methods but also requires a high robustness with respect to the physical parameters of the problem.
Author: Siegfried Selberherr
Publisher: Springer
ISBN: 9780387825045
Category : Science
Languages : en
Pages : 532
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Book Description
Author: Wolfgang Joppich
Publisher: Springer
ISBN: 9783211824047
Category : Technology & Engineering
Languages : en
Pages : 309
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Book Description
It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. This happened in dependent from each other, with a completely different background and different intentions in mind. At this time, some important monographs appeared or have been in preparation. There are the three "classical" ones, from our point of view: the so-called "1984 Guide" [12J by Brandt, the "Multi-Grid Methods and Applications" [49J by Hackbusch and the so-called "Fundamentals" [132J by Stiiben and Trottenberg. Stiiben and Trottenberg in [132J state a "delayed acceptance, resent ments" with respect to multigrid algorithms. They complain: "Nevertheless, even today's situation is still unsatisfactory in several respects. If this is true for the development of standard methods, it applies all the more to the area of really difficult, complex applications." In spite of all the above mentioned publications and without ignoring important theoretical and practical improvements of multigrid, this situa tion has not yet changed dramatically. This statement is made under the condition that a numerical principle like multigrid is "accepted", if there exist "professional" programs for research and production purposes. "Professional" in this context stands for "solving complex technical prob lems in an industrial environment by a large community of users". Such a use demands not only for fast solution methods but also requires a high robustness with respect to the physical parameters of the problem.
Author: William L. Briggs
Publisher: SIAM
ISBN: 9780898714623
Category : Mathematics
Languages : en
Pages : 318
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Book Description
Mathematics of Computing -- Numerical Analysis.
Author: Vassil Palankovski
Publisher: Springer Science & Business Media
ISBN: 9783211405376
Category : Computers
Languages : en
Pages : 330
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Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author: Stephen F. McCormick
Publisher: SIAM
ISBN: 1611971055
Category : Mathematics
Languages : en
Pages : 292
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Book Description
A thoughtful consideration of the current level of development of multigrid methods, this volume is a carefully edited collection of papers that addresses its topic on several levels. The first three chapters orient the reader who is familiar with standard numerical techniques to multigrid methods, first by discussing multigrid in the context of standard techniques, second by detailing the mechanics of use of the method, and third by applying the basic method to some current problems in fluid dynamics. The fourth chapter provides a unified development, complete with theory, of algebraic multigrid (AMG), which is a linear equation solver based on multigrid principles. The last chapter is an ambitious development of a very general theory of multigrid methods for variationally posed problems. Included as an appendix is the latest edition of the Multigrid Bibliography, an attempted compilation of all existing research publications on multigrid.
Author: Christoph Jungemann
Publisher: Springer Science & Business Media
ISBN: 3709160863
Category : Technology & Engineering
Languages : en
Pages : 278
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Book Description
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Author: Dietmar Schroeder
Publisher: Springer Science & Business Media
ISBN: 9783211825396
Category : Science
Languages : en
Pages : 252
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Book Description
1 Introduction.- 2 Charge Transport in the Volume.- 3 General Electronic Model of the Interface.- 4 Charge Transport Across the Interface.- 5 Semiconductor-Insulator Interface.- 6 Metal-Semiconductor Contact.- 7 Semiconductor Heterojunction.- 8 MOSFET Gate.- 9 Discretization.- Appendices.- A Transformation of k-Vectors.- B Conservation of Transverse Momentum.- D Approximation of Surface Mobility.- Bibliography 209 Index.
Author: Roman Wienands
Publisher: CRC Press
ISBN: 1420034995
Category : Mathematics
Languages : en
Pages : 235
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Book Description
Before applying multigrid methods to a project, mathematicians, scientists, and engineers need to answer questions related to the quality of convergence, whether a development will pay out, whether multigrid will work for a particular application, and what the numerical properties are. Practical Fourier Analysis for Multigrid Methods uses a detaile
Author: Narain D. Arora
Publisher: Springer Science & Business Media
ISBN: 3709192471
Category : Computers
Languages : en
Pages : 628
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Book Description
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
