Author: K. Sivasankaran
Publisher: Springer Nature
ISBN: 981990157X
Category : Computers
Languages : en
Pages : 98
Book Description
This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
Multigate Transistors for High Frequency Applications
Author: K. Sivasankaran
Publisher: Springer Nature
ISBN: 981990157X
Category : Computers
Languages : en
Pages : 98
Book Description
This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
Publisher: Springer Nature
ISBN: 981990157X
Category : Computers
Languages : en
Pages : 98
Book Description
This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
Sub-Micron Semiconductor Devices
Author: Ashish Raman
Publisher: CRC Press
ISBN: 1000577236
Category : Technology & Engineering
Languages : en
Pages : 410
Book Description
This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
Publisher: CRC Press
ISBN: 1000577236
Category : Technology & Engineering
Languages : en
Pages : 410
Book Description
This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
Telecommunication Electronics
Author: Dante Del Corso
Publisher: Artech House
ISBN: 1630817376
Category : Technology & Engineering
Languages : en
Pages : 307
Book Description
This practical, hands-on resource describes functional units and circuits of telecommunication systems. The functions characterizing these systems, including RF amplifiers (both low noise and power amplifiers), signal sources, mixers and phase lock loops, are explored from an operational level viewpoint. And as all functions are migrating to digital implementations, this book describes functional units and circuits of telecommunication systems (with radio, wire, or optical links), from functional level viewpoint to the circuit details and examples. The structure of a radio transceiver is described and a view of all functional units, including migration to SDR (Software Defined Radio) is provided. Chapters include a functional identification of the units described and analysis of possible circuit solutions and analysis of error sources. The sequence reflects the actual design procedure: functional identification, search and analysis of solutions, and critical review to provide an understanding of the various solutions and tradeoffs, with guidelines for design and/or selection of proper functional units.
Publisher: Artech House
ISBN: 1630817376
Category : Technology & Engineering
Languages : en
Pages : 307
Book Description
This practical, hands-on resource describes functional units and circuits of telecommunication systems. The functions characterizing these systems, including RF amplifiers (both low noise and power amplifiers), signal sources, mixers and phase lock loops, are explored from an operational level viewpoint. And as all functions are migrating to digital implementations, this book describes functional units and circuits of telecommunication systems (with radio, wire, or optical links), from functional level viewpoint to the circuit details and examples. The structure of a radio transceiver is described and a view of all functional units, including migration to SDR (Software Defined Radio) is provided. Chapters include a functional identification of the units described and analysis of possible circuit solutions and analysis of error sources. The sequence reflects the actual design procedure: functional identification, search and analysis of solutions, and critical review to provide an understanding of the various solutions and tradeoffs, with guidelines for design and/or selection of proper functional units.
Advanced Field-Effect Transistors
Author: Dharmendra Singh Yadav
Publisher: CRC Press
ISBN: 1003816266
Category : Technology & Engineering
Languages : en
Pages : 306
Book Description
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Publisher: CRC Press
ISBN: 1003816266
Category : Technology & Engineering
Languages : en
Pages : 306
Book Description
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
FinFETs and Other Multi-Gate Transistors
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 038771751X
Category : Technology & Engineering
Languages : en
Pages : 350
Book Description
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Publisher: Springer Science & Business Media
ISBN: 038771751X
Category : Technology & Engineering
Languages : en
Pages : 350
Book Description
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
ICICCT 2019 – System Reliability, Quality Control, Safety, Maintenance and Management
Author: Vinit Kumar Gunjan
Publisher: Springer
ISBN: 9811384614
Category : Technology & Engineering
Languages : en
Pages : 894
Book Description
This book discusses reliability applications for power systems, renewable energy and smart grids and highlights trends in reliable communication, fault-tolerant systems, VLSI system design and embedded systems. Further, it includes chapters on software reliability and other computer engineering and software management-related disciplines, and also examines areas such as big data analytics and ubiquitous computing. Outlining novel, innovative concepts in applied areas of reliability in electrical, electronics and computer engineering disciplines, it is a valuable resource for researchers and practitioners of reliability theory in circuit-based engineering domains.
Publisher: Springer
ISBN: 9811384614
Category : Technology & Engineering
Languages : en
Pages : 894
Book Description
This book discusses reliability applications for power systems, renewable energy and smart grids and highlights trends in reliable communication, fault-tolerant systems, VLSI system design and embedded systems. Further, it includes chapters on software reliability and other computer engineering and software management-related disciplines, and also examines areas such as big data analytics and ubiquitous computing. Outlining novel, innovative concepts in applied areas of reliability in electrical, electronics and computer engineering disciplines, it is a valuable resource for researchers and practitioners of reliability theory in circuit-based engineering domains.
Lateral Power Transistors in Integrated Circuits
Author: Tobias Erlbacher
Publisher: Springer
ISBN: 3319005006
Category : Technology & Engineering
Languages : en
Pages : 235
Book Description
The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
Publisher: Springer
ISBN: 3319005006
Category : Technology & Engineering
Languages : en
Pages : 235
Book Description
The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
Quantum-Dot Cellular Automata Circuits for Nanocomputing Applications
Author: Trailokya Nath Sasamal
Publisher: CRC Press
ISBN: 1000910369
Category : Technology & Engineering
Languages : en
Pages : 253
Book Description
This book provides a composite solution for optimal logic designs for Quantum-Dot Cellular Automata based circuits. It includes the basics of new logic functions and novel digital circuit designs, quantum computing with QCA, new trends in quantum and quantum-inspired algorithms and applications, and algorithms to support QCA designers. Futuristic Developments in Quantum-Dot Cellular Automata Circuits for Nanocomputing includes QCA-based new nanoelectronics architectures that help in improving the logic computation and information flow at physical implementation level. The book discusses design methodologies to obtain an optimal layout for some of the basic logic circuits considering key metrics such as wire delays, cell counts, and circuit area that help in improving the logic computation and information flow at physical implementation level. Examines several challenges toward QCA technology like clocking mechanism, floorplan which would facilitate manufacturability, Electronic Design Automation (EDA) tools for design and fabrication like simulation, synthesis, testing etc. The book is intended for students and researchers in electronics and computer disciplines who are interested in this rapidly changing field under the umbrella of courses such as emerging nanotechnologies and its architecture, low-power digital design. The work will also help the manufacturing companies/industry professionals, in nanotechnology and semiconductor engineers in the development of low power quantum computers.
Publisher: CRC Press
ISBN: 1000910369
Category : Technology & Engineering
Languages : en
Pages : 253
Book Description
This book provides a composite solution for optimal logic designs for Quantum-Dot Cellular Automata based circuits. It includes the basics of new logic functions and novel digital circuit designs, quantum computing with QCA, new trends in quantum and quantum-inspired algorithms and applications, and algorithms to support QCA designers. Futuristic Developments in Quantum-Dot Cellular Automata Circuits for Nanocomputing includes QCA-based new nanoelectronics architectures that help in improving the logic computation and information flow at physical implementation level. The book discusses design methodologies to obtain an optimal layout for some of the basic logic circuits considering key metrics such as wire delays, cell counts, and circuit area that help in improving the logic computation and information flow at physical implementation level. Examines several challenges toward QCA technology like clocking mechanism, floorplan which would facilitate manufacturability, Electronic Design Automation (EDA) tools for design and fabrication like simulation, synthesis, testing etc. The book is intended for students and researchers in electronics and computer disciplines who are interested in this rapidly changing field under the umbrella of courses such as emerging nanotechnologies and its architecture, low-power digital design. The work will also help the manufacturing companies/industry professionals, in nanotechnology and semiconductor engineers in the development of low power quantum computers.
Silicon-on-Insulator Technology and Devices 14
Author: Yasuhisa Omura
Publisher: The Electrochemical Society
ISBN: 1566777127
Category : Semiconductors
Languages : en
Pages : 357
Book Description
This issue of ECS Transactions contains papers on silicon-on-insulator subjects including devices, device physics, modelling, simulations, microelectronics, photonics, nano-technology, integrated circuits, radiation hardness, material characterization, reliability, and sensors
Publisher: The Electrochemical Society
ISBN: 1566777127
Category : Semiconductors
Languages : en
Pages : 357
Book Description
This issue of ECS Transactions contains papers on silicon-on-insulator subjects including devices, device physics, modelling, simulations, microelectronics, photonics, nano-technology, integrated circuits, radiation hardness, material characterization, reliability, and sensors
Electrostatic Discharge Protection
Author: Juin J. Liou
Publisher: CRC Press
ISBN: 1482255898
Category : Technology & Engineering
Languages : en
Pages : 304
Book Description
Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry. Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection. Amply illustrated with tables, figures, and case studies, the text: Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.
Publisher: CRC Press
ISBN: 1482255898
Category : Technology & Engineering
Languages : en
Pages : 304
Book Description
Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry. Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection. Amply illustrated with tables, figures, and case studies, the text: Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.