Multi-scale Modeling on Select Chemical Vapor Deposition Processes PDF Download
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Author: Yousef Ali Sharifi
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Yousef Ali Sharifi
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Jonathan Jilesen
Publisher:
ISBN:
Category :
Languages : en
Pages : 107
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Multi-scale modeling of chemical vapor deposition (CVD) is a very broad topic because a large number of physical processes affect the quality and speed of film deposition. These processes have different length scales associated with them creating the need for a multi-scale model. The three main scales of importance to the modeling of CVD are the reactor scale, the feature scale, and the atomic scale. The reactor scale ranges from meters to millimeters and is called the reactor scale because it corresponds with the scale of the reactor geometry. The micrometer scale is labeled as the feature scale in this study because this is the scale related to the feature geometries. However, this is also the scale at which grain boundaries and surface quality can be discussed. The final scale of importance to the CVD process is the atomic scale. The focus of this study is on the reactor and feature scales with special focus on the coupling between these two scales. Currently there are two main methods of coupling between the reactor and feature scales. The first method is mainly applied when a modified line of sight feature scale model is used, with coupling occurring through a mass balance performed at the wafer surface. The second method is only applicable to Monte Carlo based feature scale models. Coupling in this second method is accomplished through a mass balance performed at a plane offset from the surface.
Author: Seth Thomas Rodgers
Publisher:
ISBN:
Category :
Languages : en
Pages : 246
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Author: Maria A. Nemirovskaya
Publisher:
ISBN:
Category :
Languages : en
Pages : 350
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(Cont.) In order to model selective epitaxy, the mask is represented as a hard wall boundary condition, and overgrowth on (111)A facets is included. With this model, we investigate the effects of the unknown parameters and the growth conditions on film morphology evolution. The observed trends are in agreement with the experimental data. Since KMC simulations are limited to small surfaces and short deposition times we propose algorithms for linking the KMC and mesoscale feature shape evolution models. Finally, the feasibility of linking the coupled KMC-mesoscale model and the reactor or reactor-feature scale models is assessed.
Author: Chris R. Kleijn
Publisher: Birkhäuser
ISBN: 3034877412
Category : Science
Languages : en
Pages : 138
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Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
Author: Rajesh Venkataramani
Publisher:
ISBN:
Category :
Languages : en
Pages : 436
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Author: Ben Abdallah Naoufel
Publisher: Springer Science & Business Media
ISBN: 1441989358
Category : Mathematics
Languages : en
Pages : 297
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IMA Volumes 135: Transport in Transition Regimes and 136: Dispersive Transport Equations and Multiscale Models focus on the modeling of processes for which transport is one of the most complicated components. This includes processes that involve a wdie range of length scales over different spatio-temporal regions of the problem, ranging from the order of mean-free paths to many times this scale. Consequently, effective modeling techniques require different transport models in each region. The first issue is that of finding efficient simulations techniques, since a fully resolved kinetic simulation is often impractical. One therefore develops homogenization, stochastic, or moment based subgrid models. Another issue is to quantify the discrepancy between macroscopic models and the underlying kinetic description, especially when dispersive effects become macroscopic, for example due to quantum effects in semiconductors and superfluids. These two volumes address these questions in relation to a wide variety of application areas, such as semiconductors, plasmas, fluids, chemically reactive gases, etc.
Author: E. N. Pistikopoulos
Publisher: Elsevier
ISBN: 044453895X
Category : Science
Languages : en
Pages : 2087
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The European Symposium on Computer Aided Process Engineering (ESCAPE) series presents the latest innovations and achievements of leading professionals from the industrial and academic communities. The ESCAPE series serves as a forum for engineers, scientists, researchers, managers and students to present and discuss progress being made in the area of computer aided process engineering (CAPE). European industries large and small are bringing innovations into our lives, whether in the form of new technologies to address environmental problems, new products to make our homes more comfortable and energy efficient or new therapies to improve the health and well being of European citizens. Moreover, the European Industry needs to undertake research and technological initiatives in response to humanity's "Grand Challenges," described in the declaration of Lund, namely, Global Warming, Tightening Supplies of Energy, Water and Food, Ageing Societies, Public Health, Pandemics and Security. Thus, the Technical Theme of ESCAPE 21 will be "Process Systems Approaches for Addressing Grand Challenges in Energy, Environment, Health, Bioprocessing & Nanotechnologies."
Author: Gwang-Soo Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 334
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(Cont.) A reactor scale model is developed based on the Galerkin finite element method. The model includes momentum transport, transient mass transport, potential distribution and detailed surface kinetic mechanisms. The experimental film thickness uniformity on the blank wafer with commercial electrochemical deposition cell is compared with the simulation result. The reactor scale model is used to investigate the various effects on the film thickness uniformity including terminal effects and mass transport effects. The analysis shows the qualitative difference between two effects and how they can be eliminated. Also, the reactor scale simulation tool is used to model the pulse plating process. Improved performance of the pulse plating over the constant current operation suggests that the relaxation period is the critical parameter that determines the film thickness uniformity. A computationally efficient feature scale model is developed. Mass transport, potential distribution and detailed surface reactions are included in the model ...
Author: Norman W. Loney
Publisher:
ISBN:
Category :
Languages : en
Pages : 162
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