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Author: Veit Hoffmann
Publisher: Cuvillier Verlag
ISBN: 3736939892
Category : Science
Languages : en
Pages : 118
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Book Description
The thesis describes growth and characterization of nitride-based quantum well structures for laser diodes emitting in the wavelength range between 400 nm and 450 nm. In order optimize the epitaxial growth process by metal organic vapor phase epitaxy and thus the performance of the laser diode structures, the material properties of the indium gallium nitride (InGaN) active region were correlated with device characteristics. By analyzing optically pumpable laser structures in a first step, growth conditions and growth schemes were revealed that prevent 3D growth and the formation of additional defects in the active region. In the next step, using growth parameter that provide a high material gain broad area current injection laser diodes emitting around 400 nm were realized on sapphire substrate. These devices feature threshold current densities in the range of 6 kA/cm² in pulsed operation. For laser diodes emitting at longer wavelengths, the heterostructure layout was optimized by comparing optical pumping results with device simulation. Using a layer sequence with increased modal gain, first broad area current injection laser diodes emitting around 440 nm were demonstrated. The structures were grown on low defect density bulk GaN substrates and exhibit threshold current densities of ~10 kA/cm² in pulsed operation. On the basis of these results further device and process development was started aiming for ridge waveguide laser structures operating continuous wave in the wavelength range between 400 and 450 nm.
Author: Veit Hoffmann
Publisher: Cuvillier Verlag
ISBN: 3736939892
Category : Science
Languages : en
Pages : 118
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Book Description
The thesis describes growth and characterization of nitride-based quantum well structures for laser diodes emitting in the wavelength range between 400 nm and 450 nm. In order optimize the epitaxial growth process by metal organic vapor phase epitaxy and thus the performance of the laser diode structures, the material properties of the indium gallium nitride (InGaN) active region were correlated with device characteristics. By analyzing optically pumpable laser structures in a first step, growth conditions and growth schemes were revealed that prevent 3D growth and the formation of additional defects in the active region. In the next step, using growth parameter that provide a high material gain broad area current injection laser diodes emitting around 400 nm were realized on sapphire substrate. These devices feature threshold current densities in the range of 6 kA/cm² in pulsed operation. For laser diodes emitting at longer wavelengths, the heterostructure layout was optimized by comparing optical pumping results with device simulation. Using a layer sequence with increased modal gain, first broad area current injection laser diodes emitting around 440 nm were demonstrated. The structures were grown on low defect density bulk GaN substrates and exhibit threshold current densities of ~10 kA/cm² in pulsed operation. On the basis of these results further device and process development was started aiming for ridge waveguide laser structures operating continuous wave in the wavelength range between 400 and 450 nm.
Author:
Publisher: Academic Press
ISBN: 0080864457
Category : Technology & Engineering
Languages : ru
Pages : 489
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Book Description
Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
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Book Description
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
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Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: Gyu-Chul Yi
Publisher: Springer Science & Business Media
ISBN: 3642224806
Category : Technology & Engineering
Languages : en
Pages : 347
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Book Description
This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Robert Karlicek
Publisher: Springer
ISBN: 9783319001753
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
The Handbook of Advanced Lighting Technology is a major reference work on the subject of light source science and technology, with particular focus on solid-state light sources – LEDs and OLEDs – and the development of 'smart' or 'intelligent' lighting systems; and the integration of advanced light sources, sensors, and adaptive control architectures to provide tailored illumination which is 'fit to purpose.' The concept of smart lighting goes hand-in-hand with the development of solid-state light sources, which offer levels of control not previously available with conventional lighting systems. This has impact not only at the scale of the individual user, but also at an environmental and wider economic level. These advances have enabled and motivated significant research activity on the human factors of lighting, particularly related to the impact of lighting on healthcare and education, and the Handbook provides detailed reviews of work in these areas. The potential applications for smart lighting span the entire spectrum of technology, from domestic and commercial lighting, to breakthroughs in biotechnology, transportation, and light-based wireless communication. Whilst most current research globally is in the field of solid-state lighting, there is renewed interest in the development of conventional and non-conventional light sources for specific applications. This Handbook comprehensively reviews the basic physical principles and device technologies behind all light source types and includes discussion of the state-of-the-art. The book essentially breaks down into five major sections: Section 1: The physics, materials, and device technology of established, conventional, and emerging light sources, Section 2: The science and technology of solid-state (LED and OLED) light sources, Section 3: Driving, sensing and control, and the integration of these different technologies under the concept of smart lighting, Section 4: Human factors and applications, Section 5: Environmental and economic factors and implications
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1274
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Book Description
This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.
Author: Bernard Gil
Publisher: Semiconductor Science and Tech
ISBN: 0199681724
Category : Science
Languages : en
Pages : 661
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Book Description
All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
Author: Achyut K. Dutta
Publisher: Academic Press
ISBN: 0080543766
Category : Science
Languages : en
Pages : 551
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Book Description
The communications industry is at the onset of new expansion of WDM technology necessary to meet the new demand for bandwidth. This is the second of a four reference books that will cover this technology comprehensively with all of the major topics covered by a separate volumes - i.e. active components, passive components, systems and networks. This book is the first which covers all key passive optical components required for current and next generation optical communication systems. World-renowned authors, who are pioneers in their research area, have written the chapters in their area of expertise. The book highlights not only the principle of operation and characteristics of the passive optical components, but also provides an in-depth account of the state-of-the-art system applications.- Helps the reader to choose the right device for a given system application.- Provides the reader with insight and understanding for key passive optical components frequently being / to be used in the optical communication systems, essential building blocks of today's/next generation fiber optic networks.- Allows engineers working in different optical communication areas(i.e. from system to component), to understand the principle and mechanics of each key component they deal with for optical system design.- Covers Planar lightwave circuit (PLC) based router, different optical switches technologies (based on MEMS, thermo-optic, and electro-optic) and different optical amplifier technologies (based on semiconductor optical amplifier, EDFA ,and raman amplifier). - Highlights the operating principle of each component, system applications, and also future opportunities.
