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Author: Yuhua Cheng
Publisher: Springer Science & Business Media
ISBN: 0306470500
Category : Technology & Engineering
Languages : en
Pages : 467
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Book Description
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Author: Yuhua Cheng
Publisher: Springer Science & Business Media
ISBN: 0306470500
Category : Technology & Engineering
Languages : en
Pages : 467
Get Book Here
Book Description
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Author: Weidong Liu
Publisher: World Scientific
ISBN: 9812813993
Category : Technology & Engineering
Languages : en
Pages : 435
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Book Description
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 1000006573
Category : Technology & Engineering
Languages : en
Pages : 3364
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Book Description
Standard-setting, groundbreaking, authoritative, comprehensive—these often overused words perfectly describe The Circuits and Filters Handbook, Third Edition. This standard-setting resource has documented the momentous changes that have occurred in the field of electrical engineering, providing the most comprehensive coverage available. More than 150 contributing experts offer in-depth insights and enlightened perspectives into standard practices and effective techniques that will make this set the first—and most likely the only—tool you select to help you with problem solving. In its third edition, this groundbreaking bestseller surveys accomplishments in the field, providing researchers and designers with the comprehensive detail they need to optimize research and design. All five volumes include valuable information on the emerging fields of circuits and filters, both analog and digital. Coverage includes key mathematical formulas, concepts, definitions, and derivatives that must be mastered to perform cutting-edge research and design. The handbook avoids extensively detailed theory and instead concentrates on professional applications, with numerous examples provided throughout. The set includes more than 2500 illustrations and hundreds of references. Available as a comprehensive five-volume set, each of the subject-specific volumes can also be purchased separately.
Author: Trond Ytterdal
Publisher: John Wiley & Sons
ISBN: 0470864346
Category : Technology & Engineering
Languages : en
Pages : 306
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Book Description
Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.
Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 9781420041408
Category : Computers
Languages : en
Pages : 3074
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Book Description
A bestseller in its first edition, The Circuits and Filters Handbook has been thoroughly updated to provide the most current, most comprehensive information available in both the classical and emerging fields of circuits and filters, both analog and digital. This edition contains 29 new chapters, with significant additions in the areas of computer-
Author: Kurt Hoffmann
Publisher: John Wiley & Sons
ISBN: 0470020695
Category : Technology & Engineering
Languages : en
Pages : 510
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Book Description
The development of large-scale integrated systems on a chip has had a dramatic effect on circuit design methodology. Recent years have seen an escalation of interest in systems level integration (system-on-a-chip) and the development of low power, high chip density circuits and systems. Kurt Hoffmann sets out to address a wide range of issues relating to the design and integration of integrated circuit components and provides readers with the methodology by which simple equations for the estimation of transistor geometries and circuit behaviour can be deduced. The broad coverage of this unique book ranges from field effect transistor design, MOS transistor modelling and the fundamentals of digital CMOS circuit design through to MOS memory architecture and design. Highlights the increasing requirement for information on system-on-a-chip design and integration. Combines coverage of semiconductor physics, digital VLSI design and analog integrated circuits in one volume for the first time. Written with the aim of bridging the gap between semiconductor device physics and practical circuit design. Introduces the basic behaviour of semiconductor components for ICs and covers the design of both digital and analog circuits in CMOS and BiCMOS technologies. Broad coverage will appeal to both students and practising engineers alike. Written by a respected expert in the field with a proven track record of publications in this field. Drawing upon considerable experience within both industry and academia, Hoffmann’s outstanding text, will prove an invaluable resource for designers, practising engineers in the semiconductor device field and electronics systems industry as well as Postgraduate students of microelectronics, electrical and computer engineering.
Author: Jan Valdman
Publisher: BoD – Books on Demand
ISBN: 1839682493
Category : Computers
Languages : en
Pages : 242
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Book Description
The general aim of this book is to present selected chapters of the following types: chapters with more focus on modeling with some necessary simulation details and chapters with less focus on modeling but with more simulation details. This book contains eleven chapters divided into two sections: Modeling in Continuum Mechanics and Modeling in Electronics and Engineering. We hope our book entitled "Modeling and Simulation in Engineering - Selected Problems" will serve as a useful reference to students, scientists, and engineers.
Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 0203009282
Category : Technology & Engineering
Languages : en
Pages : 314
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Book Description
As the complexity of electronic systems continues to increase, the micro-electronic industry depends upon automation and simulations to adapt quickly to market changes and new technologies. Compiled from chapters contributed to CRC's best-selling VLSI Handbook, this volume of the Principles and Applications in Engineering series covers a broad rang
Author: Takayasu Sakurai
Publisher: Springer Science & Business Media
ISBN: 0387292187
Category : Technology & Engineering
Languages : en
Pages : 420
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Book Description
Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding.
Author: Chandan Kumar Sarkar
Publisher: CRC Press
ISBN: 1466512660
Category : Technology & Engineering
Languages : en
Pages : 428
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Book Description
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
