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Author: Carlos Galup-montoro
Publisher: World Scientific
ISBN: 9814477974
Category : Technology & Engineering
Languages : en
Pages : 445
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Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author: Carlos Galup-montoro
Publisher: World Scientific
ISBN: 9814477974
Category : Technology & Engineering
Languages : en
Pages : 445
Get Book Here
Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author: Carlos Galup-Montoro
Publisher: World Scientific
ISBN: 9812568107
Category : Technology & Engineering
Languages : en
Pages : 445
Get Book Here
Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author: Robert H. Crawford
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 168
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Book Description
Author: Márcio Cherem Schneider
Publisher: Cambridge University Press
ISBN: 052111036X
Category : Computers
Languages : en
Pages : 505
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Book Description
The essentials of analog circuit design with a unique all-region MOSFET modeling approach.
Author: Juin Jei Liou
Publisher: Springer Science & Business Media
ISBN: 9780412146015
Category : Science
Languages : en
Pages : 372
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Book Description
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 136
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Book Description
Author: Narain Arora
Publisher: World Scientific
ISBN: 9814365491
Category : Technology & Engineering
Languages : en
Pages : 633
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Book Description
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Author: Edwin S. Oxner
Publisher: McGraw-Hill Companies
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 312
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Book Description
projetos eletronicos utilizando transistor de efeito de campo (fet).
Author: R. Jacob Baker
Publisher: John Wiley & Sons
ISBN: 0470229411
Category : Technology & Engineering
Languages : en
Pages : 1074
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Book Description
This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.
Author: Suman Lata Tripathi
Publisher: John Wiley & Sons
ISBN: 1119761778
Category : Computers
Languages : en
Pages : 384
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Book Description
There is not a single industry which will not be transformed by machine learning and Internet of Things (IoT). IoT and machine learning have altogether changed the technological scenario by letting the user monitor and control things based on the prediction made by machine learning algorithms. There has been substantial progress in the usage of platforms, technologies and applications that are based on these technologies. These breakthrough technologies affect not just the software perspective of the industry, but they cut across areas like smart cities, smart healthcare, smart retail, smart monitoring, control, and others. Because of these “game changers,” governments, along with top companies around the world, are investing heavily in its research and development. Keeping pace with the latest trends, endless research, and new developments is paramount to innovate systems that are not only user-friendly but also speak to the growing needs and demands of society. This volume is focused on saving energy at different levels of design and automation including the concept of machine learning automation and prediction modeling. It also deals with the design and analysis for IoT-enabled systems including energy saving aspects at different level of operation. The editors and contributors also cover the fundamental concepts of IoT and machine learning, including the latest research, technological developments, and practical applications. Valuable as a learning tool for beginners in this area as well as a daily reference for engineers and scientists working in the area of IoT and machine technology, this is a must-have for any library.
