Morphology and Purity of Epitaxial Indium Phosphide Grown by Liquid Phase Epitaxy PDF Download
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Author: Sunil Bhaskar Phatak
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 270
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Book Description
Author: Sunil Bhaskar Phatak
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 270
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Book Description
Author: R. J. Malik
Publisher:
ISBN:
Category : Indium phosphide
Languages : en
Pages : 214
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Author: Lester F. Eastman
Publisher:
ISBN:
Category :
Languages : en
Pages : 8
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Book Description
This investigation covers an effort directed at the problem of obtaining Indium phosphide, by liquid phase epitaxy, for use in high-electric-field applications such as in microwave electron devices. It covers the area of determining the growth rate, the area of obtaining high purity, the area of alloyed contacts, and the determination of high-field properties. It is concluded that multiple-layer InP can be grown predictably and repeatably by liquid phase epitaxy using a multiple-well boat with the substrate on the bottom of the melt. It is also concluded that the density of total ionized impurities is the major remaining problem preventing the use of liquid phase epitaxial InP in microwave device applications. It also appears that carbon, as well as silicon, may contribute substantially to this impurity density.
Author: Kwan-To Ip
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 318
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Author:
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ISBN:
Category :
Languages : en
Pages : 50
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We have developed a liquid phase epitaxy system for growth of thin- film, III-V materials. We have focused primarily on InP, InGaAs, and InGaAsP growth for fabricating electro-optical devices. We have developed a standard approach for each type of growth and diagnostic techniques for characterization purposes.
Author:
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Category : Aeronautics
Languages : en
Pages : 798
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Author: Robert K. Willardson
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 432
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Annotation Scientists from France, Japan, and the US summarize the advances in direct synthesis, in large crystal growth with low dislocation densities, and in epitaxial layer growth. They provide a description of substrate preparation and evaluation, and methods for the reduction of dislocations and measurement of stoichiometric defects. Topics include the state of the art in liquid encapsulated Czochralski (LEC), growth of dislocation-free InP, epitaxial InP grown by the hydride vapor phase process, commercial production of InP single crystals and substrates, and the use of low pressure MOCVD to prepare epitaxial layers of InP, GaInAs and GaInP heterostructures on InP substrates. Annotation(c) 2003 Book News, Inc., Portland, OR (booknews.com).
Author: Varley Lawson Wrick
Publisher:
ISBN:
Category : Phosphides
Languages : en
Pages : 276
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Author:
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Category : Military research
Languages : en
Pages : 652
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Author: John W. Slawinski
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 76
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