Morphological Evolution and Instabilities of Solid Thin Films and Wires PDF Download
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Author: Wanxi Kan
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Wanxi Kan
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: F. M. Borodich
Publisher: Springer Science & Business Media
ISBN: 1402090331
Category : Science
Languages : en
Pages : 311
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Book Description
This volume constitutes the Proceedings of the IUTAM Symposium on ‘Scaling in Solid Mechanics’, held in Cardiff from 25th to 29th June 2007. The Symposium was convened to address and place on record topical issues in theoretical, experimental and computational aspects of scaling approaches to solid mechanics and related elds. Scaling is a rapidly expanding area of research having multidisciplinary - plications. The expertise represented in the Symposium was accordingly very wide, and many of the world’s greatest authorities in their respective elds participated. Scaling methods apply wherever there is similarity across many scales or one need to bridge different scales, e. g. the nanoscale and macroscale. The emphasis in the Symposium was upon fundamental issues such as: mathematical foundations of scaling methods based on transformations and connections between multi-scale approaches and transformations. The Symposium remained focussed on fundam- tal research issues of practical signi cance. The considered topics included damage accumulation, growth of fatigue cracks, development of patterns of aws in earth’s core and inice, abrasiveness of rough surfaces, and soon. The Symposium consisted of forty-two oral presentations. All of the lectures were invited. Full record of the programme appears as an Appendix. Several of the lectures are not represented, mainly because of prior commitments to publish elsewhere. The proceedings p- vide a reasonable picture of understanding as it exists at present. The Symposium showed that scaling methods cannot be reduced solely to dimensional analysis and fractal approaches.
Author: J. Mirecki Millunchick
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 360
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420026585
Category : Technology & Engineering
Languages : en
Pages : 1248
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Book Description
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066919
Category : Technology & Engineering
Languages : en
Pages : 472
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Book Description
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
Author: Yong Shi
Publisher: Springer
ISBN: 3319937138
Category : Computers
Languages : en
Pages : 881
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Book Description
The three-volume set LNCS 10860, 10861 and 10862 constitutes the proceedings of the 18th International Conference on Computational Science, ICCS 2018, held in Wuxi, China, in June 2018. The total of 155 full and 66 short papers presented in this book set was carefully reviewed and selected from 404 submissions. The papers were organized in topical sections named: Part I: ICCS Main Track Part II: Track of Advances in High-Performance Computational Earth Sciences: Applications and Frameworks; Track of Agent-Based Simulations, Adaptive Algorithms and Solvers; Track of Applications of Matrix Methods in Artificial Intelligence and Machine Learning; Track of Architecture, Languages, Compilation and Hardware Support for Emerging ManYcore Systems; Track of Biomedical and Bioinformatics Challenges for Computer Science; Track of Computational Finance and Business Intelligence; Track of Computational Optimization, Modelling and Simulation; Track of Data, Modeling, and Computation in IoT and Smart Systems; Track of Data-Driven Computational Sciences; Track of Mathematical-Methods-and-Algorithms for Extreme Scale; Track of Multiscale Modelling and Simulation Part III: Track of Simulations of Flow and Transport: Modeling, Algorithms and Computation; Track of Solving Problems with Uncertainties; Track of Teaching Computational Science; Poster Papers
Author: Joshua Daniel Sugar
Publisher:
ISBN:
Category :
Languages : en
Pages : 418
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Book Description
Author: Gwo-Ching Wang
Publisher: Springer Science & Business Media
ISBN: 1461492874
Category : Technology & Engineering
Languages : en
Pages : 231
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Book Description
This unique book covers the fundamental principle of electron diffraction, basic instrumentation of RHEED, definitions of textures in thin films and nanostructures, mechanisms and control of texture formation, and examples of RHEED transmission mode measurements of texture and texture evolution of thin films and nanostructures. Also presented is a new application of RHEED in the transmission mode called RHEED pole figure technique that can be used to monitor the texture evolution in thin film growth and nanostructures and is not limited to single crystal epitaxial film growth. Details of the construction of RHEED pole figures and the interpretation of observed pole figures are presented. Materials covered include metals, semiconductors, and thin insulators. This book also: Presents a new application of RHEED in the transmission mode Introduces a variety of textures from metals, semiconductors, compound semiconductors, and their characteristics in RHEED pole figures Provides examples of RHEED measurements of texture and texture evolution, construction of RHEED pole figures, and interpretation of observed pole figures RHEED Transmission Mode and Pole Figures: Thin Film and Nanostructure Texture Analysis is ideal for researchers in materials science and engineering and nanotechnology.
Author: Aloke Paul
Publisher: Elsevier
ISBN: 0128045787
Category : Science
Languages : en
Pages : 478
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Book Description
Handbook of Solid State Diffusion, Volume 2: Diffusion Analysis in Material Applications covers the basic fundamentals, techniques, applications, and latest developments in the area of solid-state diffusion, offering a pedagogical understanding for students, academicians, and development engineers. Both experimental techniques and computational methods find equal importance in the second of this two volume set. Volume 2 covers practical issues on diffusion phenomena in bulk, thin film, and in nanomaterials. Diffusion related problems and analysis of methods in industrial applications, such as electronic industry, high temperature materials, nuclear materials, and superconductor materials are discussed. - Presents a handbook with a short mathematical background and detailed examples of concrete applications of the sophisticated methods of analysis - Enables readers to learn the basic concepts of experimental approaches and the computational methods involved in solid-state diffusion - Covers bulk, thin film, and nanomaterials - Introduces the problems and analysis in important materials systems in various applications - Collates contributions from academic and industrial problems from leading scientists involved in developing key concepts across the globe
Author: Zhenyu Zhang
Publisher: World Scientific
ISBN: 9789810234713
Category : Science
Languages : en
Pages : 516
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Book Description
This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories ? the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.
