Molecular Beam Epitaxy and in Situ Reflection High-energy Electron Diffraction of IV-VI Semiconductor Heterostructures

Molecular Beam Epitaxy and in Situ Reflection High-energy Electron Diffraction of IV-VI Semiconductor Heterostructures PDF Author: Gunther Springholz
Publisher:
ISBN: 9783853206485
Category : Heterostructures
Languages : en
Pages : 285

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Molecular Beam Epitaxy and in Situ Reflection High-energy Electron Diffraction of IV-VI Semiconductor Heterostructures

Molecular Beam Epitaxy and in Situ Reflection High-energy Electron Diffraction of IV-VI Semiconductor Heterostructures PDF Author: Gunther Springholz
Publisher:
ISBN: 9783853206485
Category : Heterostructures
Languages : en
Pages : 285

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Book Description


Reflection High-Energy Electron Diffraction

Reflection High-Energy Electron Diffraction PDF Author: Ayahiko Ichimiya
Publisher: Cambridge University Press
ISBN: 9780521453738
Category : Science
Languages : en
Pages : 370

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Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces

Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces PDF Author: P.K. Larsen
Publisher: Springer Science & Business Media
ISBN: 146845580X
Category : Science
Languages : en
Pages : 526

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Book Description
This volume contains the papers presented at the NATO Advanced Research Workshop in "Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces" held at the Koningshof conference center, Veldhoven, the Netherlands, June 15-19, 1987. The main topics of the workshop, Reflection High Energy Electron Diffraction (RHEED) and Reflection Electron Microscopy (REM), have a common basis in the diffraction processes which high energy electrons undergo when they interact with solid surfaces at grazing angles. However, while REM is a new technique developed on the basis of recent advances in transmission electron microscopy, RHEED is an old method in surface crystallography going back to the discovery of electron diffraction in 1927 by Davisson and Germer. Until the development of ultra high vacuum techniques in the 1960's made instruments using slow electrons more accessable, RHEED was the dominating electron diffraction technique. Since then and until recently the method of Low Energy Electron Diffraction (LEED) largely surpassed RHEED in popularity in surface studies. The two methods are closely related of course, each with its own specific advantages. The grazing angle geometry of RHEED has now become a very useful feature because this makes it ideally suited for combination with the thin growth technique of Molecular Beam Epitaxy (MBE). This combination allows in-situ studies of freshly grown and even growing surfaces, opening up new areas of research of both fundamental and technological importance.

Applied RHEED

Applied RHEED PDF Author: Wolfgang Braun
Publisher: Springer Science & Business Media
ISBN: 9783540651994
Category : Science
Languages : en
Pages : 240

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Book Description
The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.

Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference PDF Author: J Pollman
Publisher: World Scientific
ISBN: 9814552399
Category :
Languages : en
Pages : 818

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Book Description
Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.

Lead Chalcogenides

Lead Chalcogenides PDF Author: D. Khokhlov
Publisher: CRC Press
ISBN: 9781560329169
Category : Technology & Engineering
Languages : en
Pages : 720

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Book Description
Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the [roperties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.

Reflection High-energy Electron Diffraction During Molecular-beam Eptiaxy

Reflection High-energy Electron Diffraction During Molecular-beam Eptiaxy PDF Author: Jan Paul Antoni Van der Wagt
Publisher:
ISBN:
Category :
Languages : en
Pages : 326

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Narrow Gap Semiconductors - Proceedings Of The Eighth International Conference

Narrow Gap Semiconductors - Proceedings Of The Eighth International Conference PDF Author: Sue-chu Shen
Publisher: World Scientific
ISBN: 9814545325
Category :
Languages : en
Pages : 494

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Book Description
Contents:Materials and Related Physics: Magnetic Field and Dimensionality Induced Population Effects in HgSe and HgSe:Fe (O Portugall et al)Growth and in Situ Scanning Tunneling Microscopy Studies of IV–VI Semiconductors (Abstract) (G Springholz)Detectors and Arrays: China's Satellite Project for Earth Observation and Infrared Detection (D-B Kuang)Recent Progress in Quantum Well Infrared Photodetectors and Focal Plane Arrays for LWIR Imaging Applications (S S Li)Infrared Lasers: Mid-Infrared Resonant-Cavity-Based Devices: Of Detectors and Emitters (J Bleuse et al)W Lasers for the Mid-IR (J R Meyer et al)Devices and Related Physics: Optoelectronic Devices from Indium Aluminium Antimonide and Mercury Cadmium Telluride (T Ashley)Three-Terminal Superconductor–Semiconductor Devices (H Takayanagi & T Akazaki)Physics: Coherent Anti-Stokes Raman Scattering in Diluted Magnetic IV–VI Epilayers and Superlattices (H Pascher et al)High Field Cyclotron Resonance in GaSb and Effective Mass at the Γ and L-Points (H Arimoto et al)Quantum Dots: Growth and Characterization of InAs Quantum Dots (N N Ledentsov)Self-Assembled InAs Quantum Boxes: Growth, Intrinsic Properties, Potential Applications (Abstract) (J M Gérard)and other papers Readership: Researchers in the field of semiconductors.

Thermoelectrics Handbook

Thermoelectrics Handbook PDF Author: D.M. Rowe
Publisher: CRC Press
ISBN: 9780849322648
Category : Technology & Engineering
Languages : en
Pages : 1028

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Book Description
Ten years ago, D.M. Rowe introduced the bestselling CRC Handbook of Thermoelectrics to wide acclaim. Since then, increasing environmental concerns, desire for long-life electrical power sources, and continued progress in miniaturization of electronics has led to a substantial increase in research activity involving thermoelectrics. Reflecting the latest trends and developments, the Thermoelectrics Handbook: Macro to Nano is an extension of the earlier work and covers the entire range of thermoelectrics disciplines. Serving as a convenient reference as well as a thorough introduction to thermoelectrics, this book includes contributions from 99 leading authorities from around the world. Its coverage spans from general principles and theoretical concepts to material preparation and measurements; thermoelectric materials; thermoelements, modules, and devices; and thermoelectric systems and applications. Reflecting the enormous impact of nanotechnology on the field-as the thermoelectric properties of nanostructured materials far surpass the performance of conventional materials-each section progresses systematically from macro-scale to micro/nano-scale topics. In addition, the book contains an appendix listing major manufacturers and suppliers of thermoelectric modules. There is no longer any need to spend hours plodding through the journal literature for information. The Thermoelectrics Handbook: Macro to Nano offers a timely, comprehensive treatment of all areas of thermoelectrics in a single, unified reference.

Molecular Beam Epitaxy

Molecular Beam Epitaxy PDF Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790

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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community