Molecular Beam Epitaxial Growth of GaAs and GaAsySb1-y for Heterojunction Bipolar Transistors

Molecular Beam Epitaxial Growth of GaAs and GaAsySb1-y for Heterojunction Bipolar Transistors PDF Author: G. I. Hobson
Publisher:
ISBN:
Category :
Languages : en
Pages :

Get Book Here

Book Description

Molecular Beam Epitaxial Growth of GaAs and GaAsySb1-y for Heterojunction Bipolar Transistors

Molecular Beam Epitaxial Growth of GaAs and GaAsySb1-y for Heterojunction Bipolar Transistors PDF Author: G. I. Hobson
Publisher:
ISBN:
Category :
Languages : en
Pages :

Get Book Here

Book Description


Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors

Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors PDF Author: Nein-Yi Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 446

Get Book Here

Book Description


Development of Inverted (Al,Ga) as Heterojunction Bipolar Transistors by Molecular Beam Epitaxy

Development of Inverted (Al,Ga) as Heterojunction Bipolar Transistors by Molecular Beam Epitaxy PDF Author: Bruce Robert Hancock
Publisher:
ISBN:
Category :
Languages : en
Pages : 182

Get Book Here

Book Description


Gas-source Molecular Beam Epitaxy of GaInNAs and Ga(In)NP for Electronic and Optoelectronic Device Applications

Gas-source Molecular Beam Epitaxy of GaInNAs and Ga(In)NP for Electronic and Optoelectronic Device Applications PDF Author: Huoping Xin
Publisher:
ISBN:
Category :
Languages : en
Pages : 350

Get Book Here

Book Description


The Molecular Beam Epitaxial Growth of High Quality GaAs-A1GaAs Heterostructures for Microwave Device Applications

The Molecular Beam Epitaxial Growth of High Quality GaAs-A1GaAs Heterostructures for Microwave Device Applications PDF Author: Paul A. Maki
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 626

Get Book Here

Book Description


GaAs-based Epitaxial Structures for Heterojunction Bipolar Transistors with Increased Efficiency

GaAs-based Epitaxial Structures for Heterojunction Bipolar Transistors with Increased Efficiency PDF Author: Rebecca Jane Welty
Publisher:
ISBN:
Category :
Languages : en
Pages : 332

Get Book Here

Book Description


Fabrication of GaAs Devices

Fabrication of GaAs Devices PDF Author: Albert G. Baca
Publisher: IET
ISBN: 9780863413537
Category : Technology & Engineering
Languages : en
Pages : 372

Get Book Here

Book Description
This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

GaAs High-Speed Devices

GaAs High-Speed Devices PDF Author: C. Y. Chang
Publisher: John Wiley & Sons
ISBN: 9780471856412
Category : Technology & Engineering
Languages : en
Pages : 632

Get Book Here

Book Description
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

Heterojunction Bipolar Transistors by Molecular Beam Epitaxy

Heterojunction Bipolar Transistors by Molecular Beam Epitaxy PDF Author: B. Khamsehpour
Publisher:
ISBN:
Category :
Languages : en
Pages :

Get Book Here

Book Description


Molecular Beam Epitaxial Growth of GaAs/AlGaAs Heterostructure and Nitrogen-containing Alloy on Patterned Substrate

Molecular Beam Epitaxial Growth of GaAs/AlGaAs Heterostructure and Nitrogen-containing Alloy on Patterned Substrate PDF Author: Wan Khai Loke
Publisher:
ISBN:
Category :
Languages : en
Pages : 108

Get Book Here

Book Description