Author: Xuying Dong
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
Book Description
Molecular Beam Epitaxial Growth and Characterization of the Manganese-based Heusler Alloy Films for Application in Spintronics
Author: Xuying Dong
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
Book Description
Molecular Beam Epitaxial Growth and Characterization of Single Crystal Ferromagnetic Shape Memory Nickel-manganese-gallium Films
Author: Jianwei Dong
Publisher:
ISBN:
Category :
Languages : en
Pages : 418
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 418
Book Description
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 848
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 848
Book Description
Molecular Beam Epitaxial Growth and Phase Transformation Behaviors of Heusler-type Single Crystal Ferromagnetic Shape Memory Thin Films
Author: Chung-Ping Shih
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
Book Description
Molecular Beam Epitaxial Growth and Characterization of InGaN Based Alloys, Heterostructures and Multi-quantum Wells
Author: Rajminder Singh
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 320
Book Description
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 320
Book Description
Growth by Molecular Beam Epitaxy and Characterization of AlxGA1-xN Alloy Films and Heterostructures
Author: Dimitris Korakakis
Publisher:
ISBN:
Category : Alloys
Languages : en
Pages : 280
Book Description
Publisher:
ISBN:
Category : Alloys
Languages : en
Pages : 280
Book Description
Molecular Beam Epitaxy Growth and Characterization of Ultra-wide Bandgap Materials and Devices
Author: Ryan Lowry Page
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Ultrawide bandgap (UWBG) semiconductors, especially those in the III-nitride family of materials with their exceptional electronic, optical, and thermal properties, will play a highly important role in the next generation of ultraviolet photonic and high power electronic devices. Currently, the performance and utilization of many UWBG materials in device applications is hampered by fundamental materials challenges with growth and doping. This thesis covers the growth and materials properties of two III-nitride UWBG materials, primarily grown by molecular beam epitaxy (MBE). First, hexagonal boron nitride, a two dimensional, layered material with unique optical properties and potential applications in van der Waals-based devices and heterostructures will be discussed. Second, recent work on aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) alloys will be presented.This work begins with an investigation into the high temperature MBE growth of hBN on several substrates. The layers show improved quality over previous reports and are thoroughly characterized. Next, the optical properties of these hBN films, as well as those of bulk doped hBN crystals, are investigated by cryogenic deep UV photoluminescence. Several new emission characteristics are identified and studied in these hBN materials, including carbon-induced luminescence, the direct bandgap transition of monolayer hBN, and single photon emission from hBN defects. Transitioning to the AlGaN platform, the growth of AlN and AlGaN by MBE on high quality single crystalline bulk AlN substrates is outlined and expanded upon, including an analysis of AlGaN doping with Si and Mg. The MBE growth, doping, and electron transport of heavily Si-doped, high Al mole fraction Al- GaN on bulk AlN is investigated, revealing upper practical limits to both Al mole fraction and Si doping density for high conductivity n-type films. In addition to this work on material growth and characterization, several AlGaN-based devices, an optically pumped UV laser and a Schottky barrier diode, will be introduced and discussed. These devices directly benefit from the preceding advances in AlGaN growth and doping. Finally, initial exploratory investigations and results on cubic phase BN as well as boron aluminum nitride alloys will be presented.
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Ultrawide bandgap (UWBG) semiconductors, especially those in the III-nitride family of materials with their exceptional electronic, optical, and thermal properties, will play a highly important role in the next generation of ultraviolet photonic and high power electronic devices. Currently, the performance and utilization of many UWBG materials in device applications is hampered by fundamental materials challenges with growth and doping. This thesis covers the growth and materials properties of two III-nitride UWBG materials, primarily grown by molecular beam epitaxy (MBE). First, hexagonal boron nitride, a two dimensional, layered material with unique optical properties and potential applications in van der Waals-based devices and heterostructures will be discussed. Second, recent work on aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) alloys will be presented.This work begins with an investigation into the high temperature MBE growth of hBN on several substrates. The layers show improved quality over previous reports and are thoroughly characterized. Next, the optical properties of these hBN films, as well as those of bulk doped hBN crystals, are investigated by cryogenic deep UV photoluminescence. Several new emission characteristics are identified and studied in these hBN materials, including carbon-induced luminescence, the direct bandgap transition of monolayer hBN, and single photon emission from hBN defects. Transitioning to the AlGaN platform, the growth of AlN and AlGaN by MBE on high quality single crystalline bulk AlN substrates is outlined and expanded upon, including an analysis of AlGaN doping with Si and Mg. The MBE growth, doping, and electron transport of heavily Si-doped, high Al mole fraction Al- GaN on bulk AlN is investigated, revealing upper practical limits to both Al mole fraction and Si doping density for high conductivity n-type films. In addition to this work on material growth and characterization, several AlGaN-based devices, an optically pumped UV laser and a Schottky barrier diode, will be introduced and discussed. These devices directly benefit from the preceding advances in AlGaN growth and doping. Finally, initial exploratory investigations and results on cubic phase BN as well as boron aluminum nitride alloys will be presented.
Characterization and Stability of the Interfaces Between Manganese-based Metals and Compound Semiconductors Grown by Molecular Bean Epitaxy
Author: Jessica Lynn Hilton
Publisher:
ISBN:
Category :
Languages : en
Pages : 376
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 376
Book Description
Epitaxial Growth and Characterization of Narrow Bandgap III-V Semiconductors and Related Semimetals
Author: Sukgeun Choi
Publisher:
ISBN:
Category :
Languages : en
Pages : 246
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 246
Book Description
Molecular Beam Epitaxy
Author: Mohamed Henini
Publisher: Newnes
ISBN: 0123918596
Category : Technology & Engineering
Languages : en
Pages : 745
Book Description
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. - Condenses fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Publisher: Newnes
ISBN: 0123918596
Category : Technology & Engineering
Languages : en
Pages : 745
Book Description
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. - Condenses fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community