Author: M. O. Manasreh
Publisher: CRC Press
ISBN: 1000725308
Category : Technology & Engineering
Languages : en
Pages : 526
Book Description
Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters, switches, nonlinear optics, and field-defect transistors. This volume, featuring contributions from leading researchers in the field, is the first book to focus on antimonide-related topics. It offers to both the beginning student and the advanced researcher a comprehensive review of the state of the art in this exciting new area of research.
Antimonide-Related Strained-Layer Heterostructures
Author: M. O. Manasreh
Publisher: CRC Press
ISBN: 1000725308
Category : Technology & Engineering
Languages : en
Pages : 526
Book Description
Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters, switches, nonlinear optics, and field-defect transistors. This volume, featuring contributions from leading researchers in the field, is the first book to focus on antimonide-related topics. It offers to both the beginning student and the advanced researcher a comprehensive review of the state of the art in this exciting new area of research.
Publisher: CRC Press
ISBN: 1000725308
Category : Technology & Engineering
Languages : en
Pages : 526
Book Description
Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters, switches, nonlinear optics, and field-defect transistors. This volume, featuring contributions from leading researchers in the field, is the first book to focus on antimonide-related topics. It offers to both the beginning student and the advanced researcher a comprehensive review of the state of the art in this exciting new area of research.
Semiconductor Materials for Optoelectronics and LTMBE Materials
Author: J.P. Hirtz
Publisher: Elsevier
ISBN: 1483290425
Category : Science
Languages : en
Pages : 365
Book Description
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Publisher: Elsevier
ISBN: 1483290425
Category : Science
Languages : en
Pages : 365
Book Description
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Molecular Beam Epitaxy
Author: John Orton
Publisher: OUP Oxford
ISBN: 0191061166
Category : Science
Languages : en
Pages : 529
Book Description
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Publisher: OUP Oxford
ISBN: 0191061166
Category : Science
Languages : en
Pages : 529
Book Description
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Physics Briefs
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1058
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1058
Book Description
Molecular Beam Epitaxy
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 796
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 796
Book Description
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1556
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1556
Book Description
International Aerospace Abstracts
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 944
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 944
Book Description
Metals Abstracts Index
Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 894
Book Description
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 894
Book Description
Applied Science & Technology Index
Author:
Publisher:
ISBN:
Category : Electronic journals
Languages : en
Pages : 2948
Book Description
Publisher:
ISBN:
Category : Electronic journals
Languages : en
Pages : 2948
Book Description