Modulation-doped Field Effect Transistors for High-power Microwave Applications PDF Download
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Author: Ronald Waldo Grundbacher
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
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Book Description
The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Author: Ronald Waldo Grundbacher
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
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Book Description
The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862539
Category : Science
Languages : en
Pages : 443
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Mike Golio
Publisher: CRC Press
ISBN: 135183620X
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.
Author: John L. B. Walker
Publisher: Cambridge University Press
ISBN: 0521760100
Category : Technology & Engineering
Languages : en
Pages : 705
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Book Description
This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Author: Trupti Ranjan Lenka
Publisher: Springer Nature
ISBN: 9811921652
Category : Technology & Engineering
Languages : en
Pages : 246
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Book Description
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Author: Mike Golio
Publisher: CRC Press
ISBN: 1439833230
Category : Technology & Engineering
Languages : en
Pages : 2193
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Book Description
By 1990 the wireless revolution had begun. In late 2000, Mike Golio gave the world a significant tool to use in this revolution: The RF and Microwave Handbook. Since then, wireless technology spread across the globe with unprecedented speed, fueled by 3G and 4G mobile technology and the proliferation of wireless LANs. Updated to reflect this tremendous growth, the second edition of this widely embraced, bestselling handbook divides its coverage conveniently into a set of three books, each focused on a particular aspect of the technology. Six new chapters cover WiMAX, broadband cable, bit error ratio (BER) testing, high-power PAs (power amplifiers), heterojunction bipolar transistors (HBTs), as well as an overview of microwave engineering. Over 100 contributors, with diverse backgrounds in academic, industrial, government, manufacturing, design, and research reflect the breadth and depth of the field. This eclectic mix of contributors ensures that the coverage balances fundamental technical issues with the important business and marketing constraints that define commercial RF and microwave engineering. Focused chapters filled with formulas, charts, graphs, diagrams, and tables make the information easy to locate and apply to practical cases. The new format, three tightly focused volumes, provides not only increased information but also ease of use. You can find the information you need quickly, without wading through material you don’t immediately need, giving you access to the caliber of data you have come to expect in a much more user-friendly format.
Author: Mike Golio
Publisher: CRC Press
ISBN: 142000672X
Category : Technology & Engineering
Languages : en
Pages : 734
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Book Description
In the high frequency world, the passive technologies required to realize RF and microwave functionality present distinctive challenges. SAW filters, dielectric resonators, MEMS, and waveguide do not have counterparts in the low frequency or digital environment. Even when conventional lumped components can be used in high frequency applications, their behavior does not resemble that observed at lower frequencies. RF and Microwave Passive and Active Technologies provides detailed information about a wide range of component technologies used in modern RF and microwave systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.
Author: Bal S. Virdee
Publisher: Artech House
ISBN: 9781580538930
Category : Technology & Engineering
Languages : en
Pages : 264
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Book Description
"This authoritative resource offers a complete understanding of state-of-the-art and cutting-edge techniques for designing and fabricating broadband microwave amplifiers. The book covers the complete design cycle, detailing each stage in a practical, hands-on manner." "This comprehensive reference illustrates the formulation of small- and large-signal device models to help professionals accurately simulate amplifier performance, and covers all the practical aspects and circuit components used in fabrication. Engineers find design examples of various types of amplifiers that are applicable in broadband systems such as optical communications, satellite communications, spread-spectrum communications, wireless local area networks, electronic warfare, instrumentation, and phased array radar. The book also provides an in-depth treatment of ultra-broadband microwave amplifiers." --Book Jacket.
Author:
Publisher: Allied Publishers
ISBN: 9788177640151
Category : Soft computing
Languages : en
Pages : 678
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Book Description
Author: Wengang (Wayne) Bi
Publisher: CRC Press
ISBN: 1498747140
Category : Science
Languages : en
Pages : 709
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Book Description
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
