Author: James P. Lavine
Publisher:
ISBN:
Category :
Languages : en
Pages : 56
Book Description
Models of the Trapped Radiation Environment - Volume 5
Author: James P. Lavine
Publisher:
ISBN:
Category :
Languages : en
Pages : 56
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 56
Book Description
Models of the Trapped Radiation Environment. Volume 5 - Inner Belt Protons
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 68
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 68
Book Description
The NASA/National Space Science Data Center
Author: James I. Vette
Publisher:
ISBN:
Category : Solar radiation
Languages : en
Pages : 58
Book Description
Publisher:
ISBN:
Category : Solar radiation
Languages : en
Pages : 58
Book Description
Models of the Trapped Radiation Environment
Author: James I. Vette
Publisher:
ISBN:
Category : Van Allen radiation belts
Languages : en
Pages : 100
Book Description
Publisher:
ISBN:
Category : Van Allen radiation belts
Languages : en
Pages : 100
Book Description
Models of the Trapped Radiation Environment: Long term time variations, by W. L. Imhof [and others
Author: James I. Vette
Publisher:
ISBN:
Category : Van Allen radiation belts
Languages : en
Pages : 92
Book Description
Publisher:
ISBN:
Category : Van Allen radiation belts
Languages : en
Pages : 92
Book Description
New Insulators Devices and Radiation Effects
Author:
Publisher: Elsevier
ISBN: 0080534767
Category : Technology & Engineering
Languages : en
Pages : 967
Book Description
Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
Publisher: Elsevier
ISBN: 0080534767
Category : Technology & Engineering
Languages : en
Pages : 967
Book Description
Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
Models of the Trapped Radiation Environment: Inner zone protons and electrons, by J. I. Vette
Author: James I. Vette
Publisher:
ISBN:
Category : Particles (Nuclear physics)
Languages : en
Pages : 72
Book Description
Publisher:
ISBN:
Category : Particles (Nuclear physics)
Languages : en
Pages : 72
Book Description
The Nasa/National Space Science Data Center Trapped Radiation Environment Model Program, 1964 - 1991
Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722825928
Category :
Languages : en
Pages : 52
Book Description
The major effort that NASA, initially with the help of the United States Air Force (USAF), carried out for 27 years to synthesize the experimental and theoretical results of space research related to energetic charged particles into a quantitative description of the terrestrial trapped radiation environment in the form of model environments is detailed. The effort is called the Trapped Radiation Environment Modeling Program (TREMP). In chapter 2 the historical background leading to the establishment of this program is given. Also, the purpose of this modeling program as established by the founders of the program is discussed. This is followed in chapter 3 by the philosophy and approach that was applied in this program throughout its lifetime. As will be seen, this philosophy led to the continuation of the program long after it would have expired. The highlights of the accomplishments are presented in chapter 4. A view to future possible efforts in this arena is given in chapter 5, mainly to pass on to future workers the differences that are perceived from these many years of experience. Chapter 6 is an appendix that details the chronology of the development of TREMP. Finally, the references, which document the work accomplished over these years, are presented in chapter 7. Vette, James I. Goddard Space Flight Center...
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722825928
Category :
Languages : en
Pages : 52
Book Description
The major effort that NASA, initially with the help of the United States Air Force (USAF), carried out for 27 years to synthesize the experimental and theoretical results of space research related to energetic charged particles into a quantitative description of the terrestrial trapped radiation environment in the form of model environments is detailed. The effort is called the Trapped Radiation Environment Modeling Program (TREMP). In chapter 2 the historical background leading to the establishment of this program is given. Also, the purpose of this modeling program as established by the founders of the program is discussed. This is followed in chapter 3 by the philosophy and approach that was applied in this program throughout its lifetime. As will be seen, this philosophy led to the continuation of the program long after it would have expired. The highlights of the accomplishments are presented in chapter 4. A view to future possible efforts in this arena is given in chapter 5, mainly to pass on to future workers the differences that are perceived from these many years of experience. Chapter 6 is an appendix that details the chronology of the development of TREMP. Finally, the references, which document the work accomplished over these years, are presented in chapter 7. Vette, James I. Goddard Space Flight Center...
NASA Scientific and Technical Reports
Author: United States. National Aeronautics and Space Administration Scientific and Technical Information Division
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 966
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 966
Book Description
Solar-terrestrial Predictions Proceedings: Working group reports and reviews
Author: Richard Frank Donnelly
Publisher:
ISBN:
Category : Ionospheric forecasting
Languages : en
Pages : 752
Book Description
Publisher:
ISBN:
Category : Ionospheric forecasting
Languages : en
Pages : 752
Book Description