Modelling of Optical Properties of Strained Quantum Wells Including Free Carrier and Electric Field Effects PDF Download
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Author:
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Category :
Languages : en
Pages : 69
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Author:
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ISBN:
Category :
Languages : en
Pages : 69
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Book Description
Author: M. O. Manasreh
Publisher: CRC Press
ISBN: 9789056995676
Category : Science
Languages : en
Pages : 606
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Book Description
Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
Author: Desmond Michael Ryan
Publisher:
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Category :
Languages : en
Pages :
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Category : Aeronautics
Languages : en
Pages : 1102
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Author: Alexander Shik
Publisher: World Scientific
ISBN: 9814496863
Category : Science
Languages : en
Pages : 106
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Book Description
This invaluable book is devoted to the physics, technology and device applications of semiconductor structures with ultrathin layers where the electronic properties are governed by the quantum-mechanical laws. Such structures called quantum wells or structures with the two-dimensional electron gas, have become one of the most actively investigated objects in modern solid state physics. Electronic properties of quantum wells differ dramatically from those of bulk semiconductors, which allows one to observe new types of physical phenomena, such as the quantum Hall effect and many other so-far-unknown kinetic and optical effects. This, in turn, offers wide opportunities for creating semiconductor devices based on new principles, and it has give birth to the new branch of electronics called nanoelectronics.
Author: Arnel Angud Salvador
Publisher:
ISBN:
Category :
Languages : en
Pages : 226
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Book Description
Author: Mark P. Mullane
Publisher:
ISBN:
Category : Quantum theory
Languages : en
Pages : 138
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Book Description
A comprehensive model for the semiconductor quantum well is developed, which includes the effects of quantum confinement and strain, as well as many-body (Coulomb) effects. The model is applied in two regimes: the high carrier density regime associated with gain, and the low carrier density regime where the medium is absorbing. The linewidth enhancement factor (a-parameter) describes the carrier-induced relationship between gain and index changes in a semiconductor, and plays a key role in many aspects of semiconductor laser operation, particularly those associated with modulation and feedback. In this thesis we examine in detail the relevant contributions to the a-parameter, highlighting the significant influence of many-body effects. We then study of the effects of device structure and composition, discussing ways of minimising a in the context of device design. The device operating regime is found to be critically important, and the quantum well width is also found to play a role. We also explore the qualitative differences between compressive and tensile strained quantum wells, and their respective sensitivity to operating conditions. Semiconductor quantum wells also display very interesting and useful properties in the low carrier density regime, where the medium is absorbing. Particularly interesting are the saturating properties near the excitonic peak, and the effects of carrier (plasma) temperature. The possibility of significant carrier cooling under short pulse excitation near the bandedge has been highlighted, and we explore the impact of such carrier cooling on the saturation characteristics. A spectral regime of enhanced fast saturation is identified, which could provide a mechanism for previously observed mode-locking behaviour.
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Category : Dissertations, Academic
Languages : en
Pages : 790
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Author: P. K. Bhattacharya
Publisher: IET
ISBN: 9780852968819
Category : Electronic books
Languages : en
Pages : 238
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Book Description
A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
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Category :
Languages : en
Pages : 0
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We have used an external electric field to control important properties of semiconductor quantum wells. Specifically: (1) We have modified the exciton-exciton interaction. This interaction is determined by many-body effects, which depend on the overlap between the exciton's electron and hole wavefunctions, and is manifested in the energy difference between photoluminescence spectra with different polarizations. In time-resolved photoluminescence (PL) experiments with circular polarization we have observed that spectral difference, which we controlled by an electric field applied to GaAs-GaAlAs coupled quantum wells. Our results confirm the predictions of theory but also point out its limitations to fully explain our observations. (2) We have reversed the valence-band ordering in strained-layer quantum wells, thus 'undoing' the effects of strain. To prove the concept we have used strained InGaAs-InAlAs quantum wells in which the light-hole state is the ground state in the valence band. Photocurrent measurements under various fields have shown a change in the valence-band states that contribute to the fundamental (lowest-energy) transition, from light-hole states to heavy-hole states. This result opens the door to reversing the polarization of light emission in quantum wells, from TM to TE, which could find application in optical modulators. (3) We have shown the presence of low-temperature exciton-photon coupling in microcavities using PL spectroscopy. Because of thermalization until now it has been almost impossible to use PL to study at low temperature (T = 20K or less) the coupling of excitons and photons. We have determined the difference between the lowest-energy PL peak from a quantum well-microcavity system and that of an isolated quantum well, at various temperatures. This difference is constant with T when a field is applied but is T dependent when the field is suppressed. The maximum variation is a direct measure of the exciton-photon coupling.
