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Author: Yin-lai Cheng
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Category : Barium compounds
Languages : en
Pages :
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Author: Yin-lai Cheng
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ISBN:
Category : Barium compounds
Languages : en
Pages :
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Author: Sriraj G. Manavalan
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Languages : en
Pages :
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ABSTRACT: The dependence of dielectric permittivity on the applied electric field, high dielectric constant and low cost makes barium strontium titanate (BST) a promising ferroelectric material for applications in tunable microwave devices. High tunability and low dielectric loss is desired for tunable microwave devices. The primary objective of this research was to optimize the tunability and dielectric loss of BST thin films at microwave frequencies with different deposition techniques. Ba0.5Sr0.5TiO3 thin films were grown on Pt/TiO2/SiO2/Si, by pulsed laser deposition (PLD) and sputtering. Parallel plate capacitor structures were designed using ADS and fabricated. The microstructural and phase analysis of the BST films were performed using X-ray diffraction (XRD) method. The diffraction patterns are attributed to cubic (perovskite) crystal system. The analysis of surface morphology was done using atomic force microscopy.
Author: Xiaoyuan Zhou
Publisher:
ISBN:
Category : Barium compounds
Languages : en
Pages : 334
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Author: Jeffrey A. Bellotti
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Category :
Languages : en
Pages : 498
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Author: Ivan Nedkov
Publisher: Elsevier
ISBN: 9780792358732
Category : Science
Languages : en
Pages : 412
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Proceedings of the NATO Advanced Research Workshop on Ferrimagnetic Nano-crystalline and Thin Film Magnetooptical and Microwave Materials, Sozopol, Bulgaria, 27 September - 3 October, 1998
Author: Tony S. Price
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Languages : en
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Barium strontium titanate thin film varactors have been widely investigated for the purpose of creating tunable front-ends for RF and microwave systems. There is an abundance of literature observing the capacitance-voltage behavior and methods on improving tunability. However, there is a lack of thorough investigations on the nonlinear behavior, specifically the third order intermodulation distortion, and the parameters that impact it. There is also a research void that needs to be filled for nanoscale barium strontium titanate varactors as nanotechnology becomes increasingly prevalent in the design of RF and microwave components. This work aims to advance the understanding of nonlinear properties of barium strontium titanate varactors. Temperature and voltage impacts on the third order intermodulation distortion products of BST varactors are observed by two-tone measurements. The material properties of the films are correlated with the nonlinear behavior of the varactors. Additionally, size reduction capabilities are shown by fabricating planar barium strontium titanate interdigital varactors with nanoscale size gaps between the electrodes. Modeling techniques are also investigated.
Author: Kumaravinothan N. Sanmugaratna Sarma
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Languages : en
Pages :
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Author: 路勝博
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Category : Dielectrics
Languages : en
Pages : 288
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Author: Venkataramanan Gurumurthy
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Category :
Languages : en
Pages :
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ABSTRACT: The composition-dependent Curie temperature and bias-dependant dielectric permittivity of Barium Strontium Titanate (BST) makes it very attractive for tunable application in the RF/Microwave regime. In this research work, the performance of BST varactors fabricated on the conventional Pt/Ti/SiO2/Si bottom electrode stack were compared with those fabricated using chemical vapor deposited Nanocrystalline Diamond (NCD) as the diffusion barrier layer instead of SiO2. The varactors fabricated on NCD films displayed much better symmetry in capacitance-voltage behavior and better overall quality factors than varactors fabricated on SiO2. The improvement in performance can be attributed to existence of stable interfaces in the devices fabricated on NCD which reduced the bottom electrode losses at high frequencies. The SiO2 based BST varactors on the other hand displayed better reliability and breakdown fields. The main purpose of this research work is to develop a robust Metal Insulator Metal (MIM) structure to achieve better all round performance of BST varactors. In the second part of this research work, the prospect of developing diamond based layered Surface Acoustic Wave (SAW) devices using Ba0.8Sr0.2TiO3 as the piezoelectric layer is investigated. Structural characterization of BST thin films deposited on Si/NCD/Pt and Si/SiO2/Ti/Pt stack were performed using X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM). Cross-sectional studies on the two stacks were performed using Scanning Electron Microscopy (SEM). X-Ray Mapping (XRM) was then done to ascertain the quality of the interfaces and to check for interdiffusion between layers. MIM structures in the Coplanar Waveguide (CPW) configuration were fabricated using conventional lithography and etching techniques for high frequency measurements. The performance of the fabricated varactors was characterized from 100 MHz to 1 GHz. For the SAW application, structural characterization of Ba0.8Sr0.2TiO3 on Chemical Vapor Deposited (CVD) diamond was done and the deposition procedure was optimized to obtain thick BST films. SAW bandpass filters and resonators were designed wherein the device geometry was varied over a wide range in order to characterize the variation in device performance with geometry. Finally interdigital capacitor structures were fabricated and used for conducting Curie temperature measurements on the deposited BST films in order to determine the operation range of the deposited BST films.
Author:
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Category :
Languages : en
Pages : 9
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In this paper we investigate the microstructural accommodation of nonstoichiometry in (Ba(subscript x)Sr{sub 1-x}Ti{sub 1+y}O{sub 3+z}) thin films grown by chemical vapor deposition. Films with three different (Ba+Sr)/Ti ratios of 49/51 (y=0.04 in the notation of the formula above), of 48/52 (y=0.08) and of 46.5/53.5 (y=O.15), were studied. High-resolution electron microscopy is used to study the microstructure of the BST films. High-spatial resolution electron energy-loss spectroscopy (EELS) is used to reveal changes in chemistry and local atomic environment both at grain boundaries and within grains as a function of titanium excess. We find an amorphous phase at the grain boundaries and grain boundary segregation of excess titanium in the samples with y=0.15. In addition, EELS is also used to show that excess titanium is being partially accommodated in the grain interior. Implications for the film electrical and dielectric properties are outlined.
