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Author: Manjul Bhushan
Publisher: Springer Science & Business Media
ISBN: 1441993770
Category : Technology & Engineering
Languages : en
Pages : 401
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Book Description
Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance and characteristics of MOSFETs and other circuit elements. Detailed examples are presented throughout, many of which are equally applicable to other microelectronic technologies as well. The authors’ overarching goal is to provide students and technology practitioners alike a practical guide to the disciplined design and use of test structures that give unambiguous information on the parametrics and performance of digital CMOS technology.
Author: Manjul Bhushan
Publisher: Springer Science & Business Media
ISBN: 1441993770
Category : Technology & Engineering
Languages : en
Pages : 401
Get Book
Book Description
Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance and characteristics of MOSFETs and other circuit elements. Detailed examples are presented throughout, many of which are equally applicable to other microelectronic technologies as well. The authors’ overarching goal is to provide students and technology practitioners alike a practical guide to the disciplined design and use of test structures that give unambiguous information on the parametrics and performance of digital CMOS technology.
Author: Manjul Bhushan
Publisher: Springer
ISBN: 1493913492
Category : Technology & Engineering
Languages : en
Pages : 424
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Book Description
CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifications, and examines product behavior over its full voltage, temperature and frequency range.
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 230
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Book Description
Author: David Binkley
Publisher: John Wiley & Sons
ISBN: 047003369X
Category : Technology & Engineering
Languages : en
Pages : 632
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Book Description
Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.
Author: Alvin W. Strong
Publisher: John Wiley & Sons
ISBN: 047045525X
Category : Technology & Engineering
Languages : en
Pages : 642
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Book Description
This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.
Author: Steven H. Voldman
Publisher: John Wiley & Sons
ISBN: 1119233135
Category : Technology & Engineering
Languages : en
Pages : 1172
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Book Description
A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.
Author: International Conference on Microelectronic Test Structures
Publisher:
ISBN:
Category :
Languages : en
Pages : 244
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Book Description
Author: Steven H. Voldman
Publisher: John Wiley & Sons
ISBN: 1119992656
Category : Technology & Engineering
Languages : en
Pages : 260
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Book Description
Electrostatic discharge (ESD) continues to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a whole-chip ESD design synthesis approach. It provides a clear insight into the integration of ESD protection networks from a generalist perspective, followed by examples in specific technologies, circuits, and chips. Uniquely both the semiconductor chip integration issues and floorplanning of ESD networks are covered from a ‘top-down' design approach. Look inside for extensive coverage on: integration of cores, power bussing, and signal pins in DRAM, SRAM, CMOS image processing chips, microprocessors, analog products, RF components and how the integration influences ESD design and integration architecturing of mixed voltage, mixed signal, to RF design for ESD analysis floorplanning for peripheral and core I/O designs, and the implications on ESD and latchup guard ring integration for both a ‘bottom-up' and ‘top-down' methodology addressing I/O guard rings, ESD guard rings, I/O to I/O, and I/O to core classification of ESD power clamps and ESD signal pin circuitry, and how to make the correct choice for a given semiconductor chip examples of ESD design for the state-of-the-art technologies discussed, including CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, and smart power practical methods for the understanding of ESD circuit power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics ESD: Design and Synthesis is a continuation of the author's series of books on ESD protection. It is an essential reference for: ESD, circuit, and semiconductor engineers; design synthesis team leaders; layout design, characterisation, floorplanning, test and reliability engineers; technicians; and groundrule and test site developers in the manufacturing and design of semiconductor chips. It is also useful for graduate and undergraduate students in electrical engineering, semiconductor sciences, and manufacturing sciences, and on courses involving the design of ESD devices, chips and systems. This book offers a useful insight into the issues that confront modern technology as we enter the nano-electronic era.
Author: Mohamed Abu Rahma
Publisher: Springer Science & Business Media
ISBN: 146141749X
Category : Technology & Engineering
Languages : en
Pages : 176
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Book Description
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.
Author: Oleg Semenov
Publisher: Springer Science & Business Media
ISBN: 1402083017
Category : Technology & Engineering
Languages : en
Pages : 228
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Book Description
ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.
