Author: Marko Tadjer
Publisher: Woodhead Publishing
ISBN: 0128211059
Category : Technology & Engineering
Languages : en
Pages : 498
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Book Description
Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. - Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods - Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies - Touches on emerging, real-world applications for thermal management strategies in power electronics
Author: Nikolai Kolesnikov
Publisher: BoD – Books on Demand
ISBN: 9533076100
Category : Science
Languages : en
Pages : 622
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Book Description
In modern research and development, materials manufacturing crystal growth is known as a way to solve a wide range of technological tasks in the fabrication of materials with preset properties. This book allows a reader to gain insight into selected aspects of the field, including growth of bulk inorganic crystals, preparation of thin films, low-dimensional structures, crystallization of proteins, and other organic compounds.
Author: Hongyu Yu
Publisher: CRC Press
ISBN: 1351767607
Category : Science
Languages : en
Pages : 301
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Book Description
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Author: F. Ren
Publisher: The Electrochemical Society
ISBN: 1566775051
Category : Compound semiconductors
Languages : en
Pages : 491
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Book Description
This volume contains papers from two symposia: State of the Art Program on Compound Semiconductors 45 and Wide Bandgap Semiconductor Materials and Devices VII.
Author: United States. Bureau of Mines
Publisher:
ISBN:
Category : Mineral industries
Languages : en
Pages : 1060
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Book Description
Author: Gaudenzio Meneghesso
Publisher: Springer
ISBN: 331977994X
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 980
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Book Description
Author: Patrick Mottier
Publisher: John Wiley & Sons
ISBN: 0470610298
Category : Technology & Engineering
Languages : en
Pages : 299
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Book Description
Light Emitting Diodes (LEDs) are no longer confined to use in commercial signage and have now moved firmly, and with unquestioned advantages, into the field of commercial and domestic lighting. This development was prompted in the late 1980s by the invention of the blue LED, a wavelength that had previously been missing from the available LED spectrum and which opened the way to providing white light. Since that point, LED performance (including energy efficiency) has improved dramatically, and now compares with the performance of fluorescent lights - and there remain further performance improvements yet to be delivered. The book begins with the principles of LED lighting, then focuses on issues and challenges. Chapters are devoted to key steps in LED manufacturing: substrate, epitaxy, process and packaging. Photoelectric characterization of LEDs, Lighting with LEDs and the imposition of a certain level of color quality, are the subject of later chapters, and finally there is a detailed discussion of the emergence of OLEDs, or organic LEDs, which have specific capabilities of immediate interest and importance in this field.
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1948
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Book Description
Author: Marin Alexe
Publisher: Springer Science & Business Media
ISBN: 9783540210498
Category : Science
Languages : en
Pages : 524
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Book Description
During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
