Metal Impurities in Silicon-Device Fabrication PDF Download
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Author: Klaus Graff
Publisher: Springer Science & Business Media
ISBN: 3642571212
Category : Technology & Engineering
Languages : en
Pages : 285
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Book Description
This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. This new edition includes important recent data and many new tables.
Author: Klaus Graff
Publisher: Springer Science & Business Media
ISBN: 3642571212
Category : Technology & Engineering
Languages : en
Pages : 285
Get Book Here
Book Description
This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. This new edition includes important recent data and many new tables.
Author: Klaus Graff
Publisher: Springer Science & Business Media
ISBN: 3642975933
Category : Technology & Engineering
Languages : en
Pages : 228
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Book Description
A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.
Author: Cor Claeys
Publisher: Springer
ISBN: 3319939254
Category : Technology & Engineering
Languages : en
Pages : 438
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Book Description
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Author: Yutaka Yoshida
Publisher: Springer
ISBN: 4431558004
Category : Technology & Engineering
Languages : en
Pages : 498
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Book Description
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Author: Li Xu
Publisher:
ISBN:
Category :
Languages : en
Pages : 160
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 800
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Book Description
Author: Markku Tilli
Publisher: Elsevier
ISBN: 0815519885
Category : Technology & Engineering
Languages : en
Pages : 670
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Book Description
A comprehensive guide to MEMS materials, technologies and manufacturing, examining the state of the art with a particular emphasis on current and future applications. Key topics covered include: Silicon as MEMS material Material properties and measurement techniques Analytical methods used in materials characterization Modeling in MEMS Measuring MEMS Micromachining technologies in MEMS Encapsulation of MEMS components Emerging process technologies, including ALD and porous silicon Written by 73 world class MEMS contributors from around the globe, this volume covers materials selection as well as the most important process steps in bulk micromachining, fulfilling the needs of device design engineers and process or development engineers working in manufacturing processes. It also provides a comprehensive reference for the industrial R&D and academic communities. Veikko Lindroos is Professor of Physical Metallurgy and Materials Science at Helsinki University of Technology, Finland. Markku Tilli is Senior Vice President of Research at Okmetic, Vantaa, Finland. Ari Lehto is Professor of Silicon Technology at Helsinki University of Technology, Finland. Teruaki Motooka is Professor at the Department of Materials Science and Engineering, Kyushu University, Japan. Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques Shows how to protect devices from the environment and decrease package size for dramatic reduction of packaging costs Discusses properties, preparation, and growth of silicon crystals and wafers Explains the many properties (mechanical, electrostatic, optical, etc), manufacturing, processing, measuring (incl. focused beam techniques), and multiscale modeling methods of MEMS structures
Author: Bernd O. Kolbesen
Publisher: The Electrochemical Society
ISBN: 9781566773485
Category : Technology & Engineering
Languages : en
Pages : 572
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Book Description
.".. ALTECH 2003 was Symposium J1 held at the 203rd Meeting of the Electrochemical Society in Paris, France from April 27 to May 2, 2003 ... Symposium M1, Diagnostic Techniques for Semiconductor Materials and Devices, was part of the 202nd Meeting of the Electrochemical Society held in Salt Lake City, Utah, from October 21 to 25, 2002 ..."--p. iii.
Author: Nikolai Kolesnikov
Publisher: BoD – Books on Demand
ISBN: 9533076100
Category : Science
Languages : en
Pages : 622
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Book Description
In modern research and development, materials manufacturing crystal growth is known as a way to solve a wide range of technological tasks in the fabrication of materials with preset properties. This book allows a reader to gain insight into selected aspects of the field, including growth of bulk inorganic crystals, preparation of thin films, low-dimensional structures, crystallization of proteins, and other organic compounds.
Author: R. Ramesh
Publisher: Springer Science & Business Media
ISBN: 146156185X
Category : Technology & Engineering
Languages : en
Pages : 250
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Book Description
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.
