Materials Issues for Tunable RF and Microwave Devices III: Volume 720 PDF Download
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Author: Steven C. Tidrow
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 232
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Book Description
Challenges facing the implementation of an affordable tunable RF and microwave device technology are discussed in these papers from an April 2002 meeting. Materials issues and devices are examined, with information on new tunable materials, issues of preparation and optimization of bulk and think film properties, material and surface characterization, evaluation of material loss and loss mechanisms, and effects of microstructure. At the device level, phase shifters are discussed and a new device concept for variable true time delay versus phase shift is introduced. At the system level, a paraelectric lens is used to demonstrate electronic beam steering of an antenna. Tidrow is affiliated with the US Army Research Laboratory. Annotation copyrighted by Book News, Inc., Portland, OR
Author: Steven C. Tidrow
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 232
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Book Description
Challenges facing the implementation of an affordable tunable RF and microwave device technology are discussed in these papers from an April 2002 meeting. Materials issues and devices are examined, with information on new tunable materials, issues of preparation and optimization of bulk and think film properties, material and surface characterization, evaluation of material loss and loss mechanisms, and effects of microstructure. At the device level, phase shifters are discussed and a new device concept for variable true time delay versus phase shift is introduced. At the system level, a paraelectric lens is used to demonstrate electronic beam steering of an antenna. Tidrow is affiliated with the US Army Research Laboratory. Annotation copyrighted by Book News, Inc., Portland, OR
Author: S. Ashok
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 522
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Book Description
This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Author: Mark I. Gardner
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 408
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Book Description
Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.
Author: Ralf B. Wehrspohn
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 520
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Book Description
This volume combines the proceedings of Symposium K, Materials and Devices for Optoelectronics and Photonics, and Symposium L, Photonic Crystals--From Materials to Devices, both from the 2002 MRS Spring Meeting in San Francisco. The two symposia served as a unique meeting place where a community of materials scientists and device-oriented engineers could present their latest results. Papers from Symposium K concentrate on materials for solid-state lighting, with particular emphasis on nitrides and other high-bandgap semiconductors and quantum dots, as well as materials for optical waveguides and interconnects. Presentations from Symposium L discuss theoretical methods and materials and fabrication techniques for 2D and 3D photonic crystals, with special emphasis on tunability of photonic crystals.
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 520
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 432
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Book Description
Author: Stephen E. Saddow
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
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Book Description
Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.
Author: Philippe Knauth
Publisher: Cambridge University Press
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 608
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Kenneth J. Shea
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 208
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Book Description
This volume contains the proceedings of two symposia held at the 2002 MRS Spring Meeting in San Francisco. Molecular imprinting (MI) technology has attracted much attention and enjoyed tremendous development over the past decade. MI technology enables the preparation of materials with host sites that recognize specific guest molecules, analogous to the "lock-and-key" paradigm of antibodies and enzymes. Advantages of molecularly imprinted materials include: a degree of specificity approaching that of antibodies but with much greater temporal and thermal stability; rapid development because precise molecular design and chemical synthesis are unnecessary; and wide applicability because materials may be imprinted with almost any shape-persistent analyte of interest. Papers from Symposium M, "Molecularly Imprinted Materials, focus primarily on the fabrication of functional materials and devices based on MI materials. Studies are presented not only by experts in MI, but more importantly, by materials scientists integrating molecular imprinting with cutting-edge techniques in microfabrication and nanotechnology.
Author: Janice L. Veteran
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 704
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
