Materials and Physics of Emerging Nonvolatile Memories: Volume 1430 PDF Download
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Author: Yoshihisa Fujisaki
Publisher: Materials Research Society
ISBN: 9781605114071
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Symposium E, "Materials and Physics of Emerging Nonvolatile Memories," was held April 9-13 at the 2012 MRS Spring Meeting in San Francisco, California, which was a follow up of previous symposia on nonvolatile memories. In this year's symposium, 127 papers were presented in 11 sessions, including 17 invited talks, 53 oral and 57 poster contributions. Such a large number of paper submissions and high attendance in the symposium indicate continuous strong interest and worldwide research efforts in the field of nonvolatile memories. Main research areas featured in Symposium E were advanced flash and nanofloating gate memories, ferroelectric and magnetoresistive memories, organic and molecular memories, memristors and resistive switching memories, and phase-change memories. In particular, a large number of contributions were presented on resistive switching memories. The selected papers in the proceedings volume have been categorized in these areas.
Author: Yoshihisa Fujisaki
Publisher: Materials Research Society
ISBN: 9781605114071
Category : Technology & Engineering
Languages : en
Pages : 0
Get Book Here
Book Description
Symposium E, "Materials and Physics of Emerging Nonvolatile Memories," was held April 9-13 at the 2012 MRS Spring Meeting in San Francisco, California, which was a follow up of previous symposia on nonvolatile memories. In this year's symposium, 127 papers were presented in 11 sessions, including 17 invited talks, 53 oral and 57 poster contributions. Such a large number of paper submissions and high attendance in the symposium indicate continuous strong interest and worldwide research efforts in the field of nonvolatile memories. Main research areas featured in Symposium E were advanced flash and nanofloating gate memories, ferroelectric and magnetoresistive memories, organic and molecular memories, memristors and resistive switching memories, and phase-change memories. In particular, a large number of contributions were presented on resistive switching memories. The selected papers in the proceedings volume have been categorized in these areas.
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Publisher:
ISBN:
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Languages : en
Pages :
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Book Description
Author: Yoshihisa Fujisaki
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 224
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Wen Siang Lew
Publisher: Springer Nature
ISBN: 9811569126
Category : Science
Languages : en
Pages : 439
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Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Caroline Bonafos
Publisher: Cambridge University Press
ISBN: 9781107407992
Category : Technology & Engineering
Languages : en
Pages : 270
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Panagiotis Dimitrakis
Publisher: Materials Research Society
ISBN: 9781605117065
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Symposium M, 'Materials and Technology for Nonvolatile Memories', was held November 30-December 5 at the 2014 MRS Fall Meeting in Boston, Massachusetts, which was a follow up of previous symposia on nonvolatile memories. Main research areas featured in Symposium M were advanced Flash memories, organic memories, resistive switching memories (ReRAM), magnetoresistive random access memories (MRAM), ferroelectric random access memories (FeRAM), phase-change memories, as well as emerging materials and technologies for nonvolatile memories. In addition, a highly successful one-day tutorial session, 'Emerging Materials and Devices for Nonvolatile Memories', was conducted and included tutorials on ReRAM, polymer/organic materials, MRAM, and Flash memories. This symposium proceedings volume represents the recent advances and related material issues on various kinds of nonvolatile memory technologies. The papers in this volume are categorized according to each type of memory technology and are not in the order of the symposium presentations.
Author: Nicholas T. Carnevale
Publisher: Cambridge University Press
ISBN: 1139447831
Category : Medical
Languages : en
Pages : 399
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Book Description
The authoritative reference on NEURON, the simulation environment for modeling biological neurons and neural networks that enjoys wide use in the experimental and computational neuroscience communities. This book shows how to use NEURON to construct and apply empirically based models. Written primarily for neuroscience investigators, teachers, and students, it assumes no previous knowledge of computer programming or numerical methods. Readers with a background in the physical sciences or mathematics, who have some knowledge about brain cells and circuits and are interested in computational modeling, will also find it helpful. The NEURON Book covers material that ranges from the inner workings of this program, to practical considerations involved in specifying the anatomical and biophysical properties that are to be represented in models. It uses a problem-solving approach, with many working examples that readers can try for themselves.
Author: A.K. Suri
Publisher: Routledge
ISBN: 1351448978
Category : Science
Languages : en
Pages : 272
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Book Description
The growth and development witnessed today in modern science, engineering, and technology owes a heavy debt to the rare, refractory, and reactive metals group, of which niobium is a member. Extractive Metallurgy of Niobium presents a vivid account of the metal through its comprehensive discussions of properties and applications, resources and resource processing, chemical processing and compound preparation, metal extraction, and refining and consolidation. Typical flow sheets adopted in some leading niobium-producing countries for the beneficiation of various niobium sources are presented, and various chemical processes for producing pure forms of niobium intermediates such as chloride, fluoride, and oxide are discussed. The book also explains how to liberate the metal from its intermediates and describes the physico-chemical principles involved. It is an excellent reference for chemical metallurgists, hydrometallurgists, extraction and process metallurgists, and minerals processors. It is also valuable to a wide variety of scientists, engineers, technologists, and students interested in the topic.
Author: Leszek Malkinski
Publisher: BoD – Books on Demand
ISBN: 9535106376
Category : Science
Languages : en
Pages : 246
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Book Description
This book reports on recent progress in emerging technologies, modern characterization methods, theory and applications of advanced magnetic materials. It covers broad spectrum of topics: technology and characterization of rapidly quenched nanowires for information technology; fabrication and properties of hexagonal ferrite films for microwave communication; surface reconstruction of magnetite for spintronics; synthesis of multiferroic composites for novel biomedical applications, optimization of electroplated inductors for microelectronic devices; theory of magnetism of Fe-Al alloys; and two advanced analytical approaches for modeling of magnetic materials using Everett integral and the inverse problem approach. This book is addressed to a diverse group of readers with general background in physics or materials science, but it can also benefit specialists in the field of magnetic materials.
Author: Yuan Taur
Publisher: Cambridge University Press
ISBN: 9781107635715
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
