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Author: Denny D. Tang
Publisher: John Wiley & Sons
ISBN: 1119562236
Category : Science
Languages : en
Pages : 352
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Book Description
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.
Author: Joshua Foer
Publisher: Penguin
ISBN: 1101475978
Category : Science
Languages : en
Pages : 341
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Book Description
The blockbuster phenomenon that charts an amazing journey of the mind while revolutionizing our concept of memory “Highly entertaining.” —Adam Gopnik, The New Yorker “Funny, curious, erudite, and full of useful details about ancient techniques of training memory.” —The Boston Globe An instant bestseller that has now become a classic, Moonwalking with Einstein recounts Joshua Foer's yearlong quest to improve his memory under the tutelage of top "mental athletes." He draws on cutting-edge research, a surprising cultural history of remembering, and venerable tricks of the mentalist's trade to transform our understanding of human memory. From the United States Memory Championship to deep within the author's own mind, this is an electrifying work of journalism that reminds us that, in every way that matters, we are the sum of our memories.
Author: Denny D. Tang
Publisher: Cambridge University Press
ISBN: 9780521449649
Category : Technology & Engineering
Languages : en
Pages : 208
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Book Description
If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.
Author: Denny D. Tang
Publisher: John Wiley & Sons
ISBN: 1119562236
Category : Science
Languages : en
Pages : 352
Get Book Here
Book Description
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.
Author: Phil Chambers
Publisher: Pan Macmillan
ISBN: 1509814566
Category : Self-Help
Languages : en
Pages : 170
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Book Description
Do you struggle to remember people's names at social events or business networking meetings? How often do you forget where you left your keys or your phone? Have you ever walked into a room and forgotten why? A leading memory expert, Phil Chambers shows you how to make these lapses a thing of the past. With how to: train your memory, find out how to have facts and figures at your fingertips. Give speeches from memory, remember all your passwords, rapidly learn foreign language vocabulary and make studying easier, more rewarding and fun. Written in simple step-by-step fashion, with lots of exercises and examples, you will be guided from absent-mindedness to memory mastery.
Author: G.C. Hadjipanayis
Publisher: Springer Science & Business Media
ISBN: 9401006245
Category : Technology & Engineering
Languages : en
Pages : 610
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Book Description
An up-to-date and comprehensive review of magnetic storage systems, including particulate and rigid media, magnetic heads, tribology, signal processing spintronics, and other, future systems. A thorough theoretical discussion supplements the experimental and technical aspects. Each section commences with a tutorial paper, which is followed by technical discussions of current research in the area. Written at a level suitable for advanced graduate students.
Author: Library of Congress
Publisher:
ISBN:
Category : Subject headings, Library of Congress
Languages : en
Pages : 1460
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Book Description
Author: Library of Congress. Cataloging Policy and Support Office
Publisher:
ISBN:
Category : Subject headings, Library of Congress
Languages : en
Pages : 1512
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Book Description
Author: United States. Patent and Trademark Office
Publisher:
ISBN:
Category : Patents
Languages : en
Pages : 1358
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Book Description
Author: Songling Huang
Publisher: Springer
ISBN: 9811005788
Category : Technology & Engineering
Languages : en
Pages : 231
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Book Description
This book introduces novel developments in the field of electromagnetic non-destructive testing and evaluation (NDT/E). The topics include electromagnetic ultrasonic guided wave testing, pulsed eddy current testing, remote field eddy current testing, low frequency eddy current testing, metal magnetic memory testing, and magnetic flux leakage testing. Considering the increasing concern about the safety maintenance of critical structures in various industries and everyday life, these topics presented here will be of particular interest to the readers in the NDT/E field. This book covers both theoretical researches and the engineering applications of the electromagnetic NDT technology. It could serve as a valuable reference for college students and relevant NDT technicians. It is also a useful material for qualification training and higher learning for nondestructive testing professionals.
Author: D. V. Skobel tsyn
Publisher: Springer Science & Business Media
ISBN: 1475761759
Category : Science
Languages : en
Pages : 253
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Book Description
This collection of articles contains a systematic outline of original experimental and theoretical research on photoproduction of neutral pions at protons and at a strongly bound system of a few nucleons, i.e., the helium nucleus. Spark chambers and their use as spectrometers for photons and electrons are described in detail. The articles of the collection include information on a novel method of determining the efficiency of recording apparatus by generating monochromatic photons. The articles de scribe original theoretical research on the optical anisotropy of nuclei. Problems encountered in experimental studies of operating the synchrotron as a storage-type accelerator of electrons and positrons receive particular attention. The results of this research work are listed, and the problems of oppositely directed electron-positron beams in the 250-MeV synchrotron are considered. The articles should be of interest to physicists, including research workers, teachers, engineers, graduate students, and students in advanced undergraduate courses. v CONTENTS Photoproduction of Neutral Pions at Nucleons and Nuclei B.B. Govorkov, S.P. Denisov, and E.V. Minarik 0 Photoproduction of 1r Mesons at Helium and at Photon Energies of 71 160-240 MeV ...
