Low temperature growth of polycrystalline silicon by hot wire chemical vapor deposition PDF Download
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Author: Torsten Bistritschan
Publisher:
ISBN:
Category :
Languages : de
Pages : 112
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Author: Torsten Bistritschan
Publisher:
ISBN:
Category :
Languages : de
Pages : 112
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Book Description
Author: Manal Abdullah Aldawsari
Publisher:
ISBN: 9781321697520
Category : Chemical vapor deposition
Languages : en
Pages : 232
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Book Description
Crystallinity quality is a significant factor toward confirming the epitaxial layer. Raman scattering, X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), and Transmission Electron Microscope (TEM) were used to determine the crystallinity. Epitaxial growth of Si at 500 °C was obtained even with a low vacuum of 1x10-3 torr.
Author: Maribeth Swiatek Mason
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 154
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Author: Patrick Adrianus Thomas Theodorus van Veenendaal
Publisher:
ISBN:
Category :
Languages : en
Pages : 112
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Author: Jack H. Thiesen
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 418
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Author:
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
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Author: Hideki Matsumura
Publisher: John Wiley & Sons
ISBN: 3527818642
Category : Technology & Engineering
Languages : en
Pages : 440
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Book Description
The authoritative reference on catalytic chemical vapor deposition, written by the inventor of the technology. This comprehensive book covers a wide scope of Cat-CVD and related technologies from the fundamentals to the many applications, including the design of a Cat-CVD apparatus. Featuring contributions from four senior leaders in the field, including the father of catalytic chemical vapor deposition, it also introduces some of the techniques used in the observation of Cat-CVD related phenomena so that readers can understand the concepts of such techniques. Catalytic Chemical Vapor Deposition: Technology and Applications of Cat-CVD begins by reviewing the analytical tools for elucidating the chemical reactions in Cat-CVD, such as laser-induced fluorescence and deep ultra-violet absorption, and explains in detail the underlying physics and chemistry of the Cat-CVD technology. Subsequently it provides an overview of the synthesis and properties of Cat-CVD-prepared inorganic and organic thin films. The last parts of this unique book are devoted to the design and operation of Cat-CVD apparatuses and the applications. Provides coherent coverage of the fundamentals and applications of catalytic chemical vapor deposition (Cat-CVD) Assembles in one place the state of the art of this rapidly growing field, allowing new researchers to get an overview that is difficult to obtain solely from journal articles Presents comparisons of different Cat-CVD methods which are usually not found in research papers Bridges academic and industrial research, showing how CVD can be scaled up from the lab to large-scale industrial utilization in the high-tech industry. Catalytic Chemical Vapor Deposition: Technology and Applications is an excellent one-stop resource for researchers and engineers working on or entering the field of Cat-CVD, Hot-Wire CVD, iCVD, and related technologies.
Author:
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 4
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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The authors report on the first known growth of high-quality epitaxial Si via the hot wire chemical vapor deposition (HWCVD) method. This method yields device-quality epitaxial Si at the comparatively low temperatures of 195 to 450 C, and relatively high growth rates of 3 to 20 Å/sec. Layers up to 4,500-Å thick have been grown. These epitaxial layers have been characterized by transmission electron microscopy (TEM), indicating large regions of nearly perfect atomic registration. Electron channeling patterns (ECPs) generated on a scanning electron microscope (SEM) have been used to characterize as well as optimize the growth process. Electron beam induced current (EBIC) characterization has also been performed, indicating defect densities as low as 5 x 104/cm2. Secondary ion beam mass spectrometry (SIMS) data shows that these layers have reasonable impurity levels within the constraints of the current deposition system. Both n and p-type layers were grown, and p/n diodes have been fabricated.
Author: Hunter John King
Publisher:
ISBN: 9783839618202
Category :
Languages : en
Pages :
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